ZHCSNR4B May   2021  – April 2022 TPS25946

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
      1.      15
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO and UVP)
      2. 8.3.2 Overvoltage Lockout (OVLO)
      3. 8.3.3 Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 8.3.3.1 Slew Rate (dVdt) and Inrush Current Control
        2. 8.3.3.2 Active Current Limiting
        3. 8.3.3.3 Short-Circuit Protection
      4. 8.3.4 Analog Load Current Monitor
      5. 8.3.5 Reverse Current Protection
      6. 8.3.6 Overtemperature Protection (OTP)
      7. 8.3.7 Fault Response and Indication (FLT)
      8. 8.3.8 Power Good Indication (PG)
      9. 8.3.9 Input Supply Good Indication (SPLYGD)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Single Device, Self-Controlled
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Device Selection
        2. 9.2.2.2 Setting Overvoltage Threshold
        3. 9.2.2.3 Setting Output Voltage Rise Time (tR)
        4. 9.2.2.4 Setting Power Good Assertion Threshold
        5. 9.2.2.5 Setting Overcurrent Threshold (ILIM)
        6. 9.2.2.6 Setting Overcurrent Blanking Interval (tITIMER)
        7. 9.2.2.7 Selecting External Bias Resistor (R5)
        8. 9.2.2.8 Selecting External Diode (D1)
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 Output Short-Circuit Measurements
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.7 Switching Characteristics

The output rising slew rate is internally controlled and constant across the entire operating voltage range to ensure the turn on timing is not affected by the load conditions. The rising slew rate can be adjusted by adding capacitance from the dVdt pin to ground. As CdVdt is increased it will slow the rising slew rate (SR). See Slew Rate and Inrush Current Control (dVdt) section for more details. The Turn-Off Delay and Fall Time, however, are dependent on the RC time constant of the load capacitance (COUT) and Load Resistance (RL). The Switching Characteristics are only valid for the power-up sequence where the supply is available in steady state condition and the load voltage is completely discharged before the device is enabled.Typical Values are taken at TJ = 25°C unless specifically noted otherwise. RL = 100 Ω, COUT = 1 µF 
PARAMETER VIN
 CdVdt = Open CdVdt = 1800 pF CdVdt = 3300 pF UNIT
SRON Output Rising slew rate 2.7 V 12.14 0.87 0.5 V/ms
12 V 28.1 1.09 0.61
23 V 44.78 1.25 0.71
tD,ON Turn on delay 2.7 V 0.09 0.6 0.97 ms
12 V 0.1 1.32 2.35
23 V 0.11 1.99 3.69
tR Rise time 2.7 V 0.17 2.51 4.33 ms
12 V 0.35 8.1 15.37
23 V 0.40 14.4 25.89
tON Turn on time 2.7 V 0.27 3.11 5.31 ms
12 V 0.45 10.08 17.72
23 V 0.50 16.41 29.57
tD,OFF Turn off delay 2.7 V 64.44 64.44 64.44 µs
12 V 25.32 25.32 25.32
23 V 23.02 23.02 23.02
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