ZHCSL91B October   2020  – March 2022 TPS25947

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
      1.      15
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Reverse Polarity Protection
      2. 8.3.2  Undervoltage Lockout (UVLO and UVP)
      3. 8.3.3  Overvoltage Lockout (OVLO)
      4. 8.3.4  Overvoltage Clamp (OVC)
      5. 8.3.5  Inrush Current, Overcurrent, and Short Circuit Protection
        1. 8.3.5.1 Slew Rate (dVdt) and Inrush Current Control
        2. 8.3.5.2 Circuit-Breaker
        3. 8.3.5.3 Active Current Limiting
        4. 8.3.5.4 Short-Circuit Protection
      6. 8.3.6  Analog Load Current Monitor
      7. 8.3.7  Reverse Current Protection
      8. 8.3.8  Overtemperature Protection (OTP)
      9. 8.3.9  Fault Response and Indication (FLT)
      10. 8.3.10 Auxiliary Channel Control (AUXOFF)
      11. 8.3.11 Power Good Indication (PG)
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Single Device, Self-Controlled
    3. 9.3 Typical Application
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
        1. 9.3.2.1 Device Selection
        2. 9.3.2.2 Setting Undervoltage and Overvoltage Thresholds
        3. 9.3.2.3 Setting Output Voltage Rise Time (tR)
        4. 9.3.2.4 Setting Power Good Assertion Threshold
        5. 9.3.2.5 Setting Overcurrent Threshold (ILIM)
        6. 9.3.2.6 Setting Overcurrent Blanking Interval (tITIMER)
      3. 9.3.3 Application Curves
    4. 9.4 Active ORing
    5. 9.5 Priority Power MUXing
    6. 9.6 USB PD Port Protection
    7. 9.7 Parallel Operation
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 Output Short-Circuit Measurements
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Setting Output Voltage Rise Time (tR)

For a successful design, the junction temperature of device must be kept below the absolute maximum rating during both dynamic (start-up) and steady-state conditions. Dynamic power stresses often are an order of magnitude greater than the static stresses, so it is important to determine the right start-up time and inrush current limit required with system capacitance to avoid thermal shutdown during start-up.

The slew rate (SR) needed to achieve the desired output rise time can be calculated as:

Equation 12. GUID-20210329-CA0I-RRW7-DGPS-XJ6BLBN09G1H-low.gif

The CdVdt needed to achieve this slew rate can be calculated as:

Equation 13. GUID-20210329-CA0I-MWSQ-3VTV-DNKTTKJ7JH88-low.gif

Choose the nearest standard capacitor value as 3300 pF.

For this slew rate, the inrush current can be calculated as:

Equation 14. GUID-20210329-CA0I-NHM2-6S4C-ZKT4BD9ZBW3K-low.gif

The average power dissipation inside the part during inrush can be calculated as:

Equation 15. GUID-20210329-CA0I-J6K9-BLWF-N2CCQM1QSJHJ-low.gif
For the given power dissipation, the thermal shutdown time of the device must be greater than the ramp-up time tR to avoid start-up failure. Figure 9-3 shows the thermal shutdown limit, for 1.69 W of power, the shutdown time is more than 10 s which is very large as compared to tR = 20 ms. Therefore, it is safe to use 20 ms as the startup time for this application.
Figure 9-3 Thermal Shut-Down Plot During Inrush