ZHCSQ77B February   2023  – June 2024 TPS25948

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Undervoltage Lockout (UVLO and UVP)
      2. 7.3.2 Overvoltage Lockout (OVLO)
      3. 7.3.3 Inrush Current, Overcurrent, and Short Circuit Protection
        1. 7.3.3.1 Slew Rate (dVdt) and Inrush Current Control
        2. 7.3.3.2 Active Current Limiting
        3. 7.3.3.3 Short-Circuit Protection
      4. 7.3.4 Analog Load Current Monitor
      5. 7.3.5 Reverse Current Protection
      6. 7.3.6 Overtemperature Protection (OTP)
      7. 7.3.7 Fault Response and Indication (FLT)
      8. 7.3.8 Supply Good Indication (SPLYGD/SPLYGD)
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Single Device, Self-Controlled
    3. 8.3 Typical Application
      1. 8.3.1 Design Requirements
      2. 8.3.2 Detailed Design Procedure
        1. 8.3.2.1 Setting Overvoltage Threshold
        2. 8.3.2.2 Setting Output Voltage Rise Time (tR)
        3. 8.3.2.3 Setting Overcurrent Threshold (ILIM)
        4. 8.3.2.4 Setting Overcurrent Blanking Interval (tITIMER)
      3. 8.3.3 Application Curves
    4. 8.4 Active ORing
    5. 8.5 Priority Power MUXing
    6. 8.6 Parallel Operation
    7. 8.7 USB PD Port Protection
    8. 8.8 Power Supply Recommendations
      1. 8.8.1 Transient Protection
      2. 8.8.2 Output Short-Circuit Measurements
    9. 8.9 Layout
      1. 8.9.1 Layout Guidelines
      2. 8.9.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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