ZHCSOF8C november   2021  – april 2023 TPS2597

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO and UVP)
      2. 8.3.2 Overvoltage Lockout (OVLO)
      3. 8.3.3 Overvoltage Clamp (OVC)
      4. 8.3.4 Inrush Current, Overcurrent, and Short Circuit Protection
        1. 8.3.4.1 Slew Rate (dVdt) and Inrush Current Control
        2. 8.3.4.2 Circuit-Breaker
        3. 8.3.4.3 Active Current Limiting
        4. 8.3.4.4 Short-Circuit Protection
      5. 8.3.5 Analog Load Current Monitor
      6. 8.3.6 Overtemperature Protection (OTP)
      7. 8.3.7 Fault Response and Indication (FLT)
      8. 8.3.8 Power-Good Indication (PG)
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Single Device, Self-Controlled
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Device Selection
        2. 9.2.2.2 Setting Undervoltage and Overvoltage Thresholds
        3. 9.2.2.3 Setting Output Voltage Rise Time (tR)
        4. 9.2.2.4 Setting Power-Good Assertion Threshold
        5. 9.2.2.5 Setting Overcurrent Threshold (ILIM)
        6. 9.2.2.6 Setting Overcurrent Blanking Interval (tITIMER)
      3. 9.2.3 Application Curves
    3. 9.3 Parallel Operation
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient Protection
      2. 9.4.2 Output Short-Circuit Measurements
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 接收文档更新通知
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Setting Undervoltage and Overvoltage Thresholds

The supply undervoltage and overvoltage thresholds are set using the resistors R1, R2, and R3, whose values can be calculated using Equation 10 and Equation 11:

Equation 10. V IN(UV) = V UVLO(R)  × (R1 + R2 + R3) R 2 + R 3  
Equation 11. V IN(OV) = V OV(R)  × (R1 + R2 + R3) R 3  
Where VUVLO(R) is the UVLO rising threshold and VOV(R) is the OVLO rising threshold. Because R1, R2, and R3 leak the current from input supply VIN, these resistors must be selected based on the acceptable leakage current from input power supply VIN. The current drawn by R1, R2, and R3 from the power supply is IR123 = VIN / (R1 + R2 + R3). However, leakage currents due to external active components connected to the resistor string can add error to these calculations. So, the resistor string current, IR123 must be chosen to be 20 times greater than the leakage current expected on the EN/UVLO and OVLO pins.

From the device electrical specifications, both the EN/UVLO and OVLO leakage currents are 0.1 μA (maximum), VOV(R) = 1.2 V and VUVLO(R) = 1.2 V. From design requirements, VIN(OV) = 13.2 V and VIN(UV) = 10.8 V. To solve the equation, first choose the value of R1 = 470 kΩ and use the above equations to solve for R2 = 10.7 kΩ and R3 = 48 kΩ.

Using the closest standard 1% resistor values, we get R1 = 470 kΩ, R2 = 11 kΩ, and R3 = 47 kΩ.