For a successful design, the junction
temperature of the device must be kept below the absolute maximum rating during both
dynamic (start-up) and steady-state conditions. Dynamic power stresses often are an
order of magnitude greater than the static stresses, so it is important to determine the
right start-up time and inrush current limit required with system capacitance to avoid
thermal shutdown during start-up.
The
slew rate (SR) needed to achieve the desired output rise time can be calculated
as:
Equation 12.
The
CdVdt needed to achieve this slew rate can be calculated
as:
Equation 13.
Choose
the nearest standard capacitor value as 5600 pF.
For this slew rate, the inrush
current can be calculated as:
Equation 14.
The
average power dissipation inside the part during inrush can be calculated
as:
Equation 15.
For the given power dissipation, the thermal shutdown
time of the device must be greater than the ramp-up time t
R to avoid start-up
failure.
Figure 9-3 shows the thermal
shutdown limit. For 1.69 W of power, the shutdown time is more than 10 s, which is very
large as compared to t
R = 20 ms. Therefore, it is safe to use 20 ms as the
start-up time for this application.
Note: In some systems, there can be
active load circuits (for example, DC-DC converters) with low turn-on threshold
voltages which can start drawing power before the eFuse has completed the inrush
sequence. This action can cause additional power dissipation inside the eFuse during
start-up and can lead to thermal shutdown. TI recommends to use the Power Good (PG)
pin of the eFuse to enable and disable the load circuit. This action ensures that
the load is turned on only when the eFuse has completed its start-up and is ready to
deliver full power without the risk of hitting thermal shutdown.