ZHCSTG6A July   2023  – October 2023 TPS25984

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 说明（续）
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Logic Interface
    7. 7.7 Timing Requirements
    8. 7.8 Switching Characteristics
    9. 7.9 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Undervoltage Protection
      2. 8.3.2  Insertion Delay
      3. 8.3.3  Overvoltage Protection
      4. 8.3.4  Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 8.3.4.1 Slew Rate (dVdt) and Inrush Current Control
          1. 8.3.4.1.1 Start-Up Time Out
        2. 8.3.4.2 Steady-State Overcurrent Protection (Circuit-Breaker)
        3. 8.3.4.3 Active Current Limiting During Start-Up
        4. 8.3.4.4 Short-Circuit Protection
      5. 8.3.5  Analog Load Current Monitor (IMON)
      6. 8.3.6  Mode Selection (MODE)
      7. 8.3.7  Parallel Device Synchronization (SWEN)
      8. 8.3.8  Stacking Multiple eFuses for Unlimited Scalability
        1. 8.3.8.1 Current Balancing During Start-Up
      9. 8.3.9  Analog Junction Temperature Monitor (TEMP)
      10. 8.3.10 Overtemperature Protection
      11. 8.3.11 Fault Response and Indication (FLT)
      12. 8.3.12 Power-Good Indication (PG)
      13. 8.3.13 Output Discharge
      14. 8.3.14 FET Health Monitoring
      15. 8.3.15 Single Point Failure Mitigation
        1. 8.3.15.1 IMON Pin Single Point Failure
        2. 8.3.15.2 ILIM Pin Single Point Failure
        3. 8.3.15.3 IREF Pin Single Point Failure
        4. 8.3.15.4 ITIMER Pin Single Point Failure
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Single Device, Standalone Operation
      2. 9.1.2 Multiple Devices, Parallel Connection
      3. 9.1.3 Multiple eFuses, Parallel Connection With PMBus
      4. 9.1.4 Digital Telemetry Using External Microcontroller
    2. 9.2 Typical Application: 12-V, 3.3-kW Power Path Protection in Data Center Servers
      1. 9.2.1 Application
      2. 9.2.2 Design Requirements
      3. 9.2.3 Detailed Design Procedure
      4. 9.2.4 Application Curves
    3. 9.3 Best Design Practices
    4. 9.4 Power Supply Recommendations
      1. 9.4.1 Transient Protection
      2. 9.4.2 Output short-Circuit Measurements
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 静电放电警告
    5. 10.5 术语表
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)

7.8 Switching Characteristics

The output rising slew rate is internally controlled and constant across the entire operating voltage range to ensure the turn on timing is not affected by the load conditions. The rising slew rate can be adjusted by adding capacitance from the dVdt pin to ground. As CdVdt is increased it will slow the rising slew rate (SR). See Slew Rate and Inrush Current Control (dVdt) section for more details. The Turn-Off Delay and Fall Time, however, are dependent on the RC time constant of the load capacitance (COUT) and Load Resistance (RL). The Switching Characteristics are only valid for the power-up sequence where the supply is available in steady state condition and the load voltage is completely discharged before the device is enabled. Typical values are taken at TJ = 25°C unless specifically noted otherwise. VIN = 12 V, ROUT = 500 Ω, COUT = 1 mF  
PARAMETER CdVdt = 3.3 nF CdVdt = 33 nF UNITS
SRON Output rising slew rate 9.79 1.20 V/ms
tD,ON Turn on delay 0.34 1.54 ms
tR Rise time 1.00 8.13 ms
tON Turn on time 1.38 10.35 ms
tD,OFF Turn off delay 1081 1060 µs
tF Fall time Depends on ROUT and COUT µs
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