ZHCSFF5G July 2016 – December 2019 TPS2660
PRODUCTION DATA.
请参考 PDF 数据表获取器件具体的封装图。
The internal FETs and hence the load current can be switched off by pulling the SHDN pin below 0.76 V threshold with a micro-controller GPIO pin or can be controlled remotely with an opto-isolator device as shown in Figure 48 and Figure 49. The device quiescent current reduces to 20 μA (typical) in shutdown state. To assert SHDN low, the pull down must sink at least 10 µA at 400 mV. To enable the device, SHDN must be pulled up to atleast 1 V. Once the device is enabled, the internal FETs turnon with dVdT mode.