ZHCSIU6F September   2018  – June 2021 TPS2663

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Hot Plug-In and In-Rush Current Control
        1. 9.3.1.1 Thermal Regulation Loop
      2. 9.3.2  PGOOD and PGTH
        1. 9.3.2.1 PGTH as VOUT Sensing Input
      3. 9.3.3  Undervoltage Lockout (UVLO)
      4. 9.3.4  Overvoltage Protection (OVP)
      5. 9.3.5  Input Reverse Polarity Protection (B_GATE, DRV)
      6. 9.3.6  Reverse Current Protection
      7. 9.3.7  Overload and Short Circuit Protection
        1. 9.3.7.1 Overload Protection
          1. 9.3.7.1.1 Active Current Limiting at 1x IOL, (TPS26630 and TPS26632 Only)
          2. 9.3.7.1.2 Active Current Limiting with 2x IOL Pulse Current Support, (TPS26631, TPS26633, TPS26635 and TPS26636 Only)
        2. 9.3.7.2 Short Circuit Protection
          1. 9.3.7.2.1 Start-Up With Short-Circuit On Output
      8. 9.3.8  Output Power Limiting, PLIM (TPS26632, TPS26633, TPS26635 and TPS26636 Only)
      9. 9.3.9  Current Monitoring Output (IMON)
      10. 9.3.10 FAULT Response ( FLT)
      11. 9.3.11 IN_SYS, IN, OUT and GND Pins
      12. 9.3.12 Thermal Shutdown
      13. 9.3.13 Low Current Shutdown Control (SHDN)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application: Power Path Protection in a PLC System
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Programming the Current-Limit Threshold—R(ILIM) Selection
        2. 10.2.2.2 Undervoltage Lockout and Overvoltage Set Point
        3. 10.2.2.3 Output Buffer Capacitor – COUT
        4. 10.2.2.4 PGTH Set Point
        5. 10.2.2.5 Setting Output Voltage Ramp Time—(tdVdT)
          1. 10.2.2.5.1 Support Component Selections— RPGOOD and C(IN)
        6. 10.2.2.6 Selecting Q1, Q2 and TVS Clamp for Surge Protection
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 Simple 24-V Power Supply Path Protection
      2. 10.3.2 Priority Power MUX Operation
      3. 10.3.3 Input Protection for a Compact 24-V Auxiliary Power Supply for Servo Drives
    4. 10.4 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Transient Protection
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGE|24
  • PWP|20
散热焊盘机械数据 (封装 | 引脚)

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MINMAXUNIT
IN_SYSInput Voltage–6067V
IN_SYS (10ms transient), TA = 25 ℃–6075V
IN, OUT, UVLO, FLT, PGOOD, PGTH–0.367V
IN_SYS – OUT (10ms transient), with a Blocking FET–85V
IN (10ms transient), TA = 25 ℃–0.375V
BGATE–6081V
BGATE – IN_SYS–0.314V
DRV–6072V
DRV – IN_SYS–0.320V
OVP, dVdT, IMON, MODE, SHDN, ILIM, PLIM–0.35.5V
IFLT, IdVdT, IPGOODSink current10mA
IdVdT, IILIM, IPLIM, IMODE, ISHDNSource currentInternally limited
TJOperating Junction temperature–40150°C
Transient junction temperature–65T(TSD)
TstgStorage temperature–65150
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.