ZHCSMM1C April   2023  – February 2024 TPS274C65

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     7
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 SPI Timing Requirements
    8. 6.8 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Pin Diagrams
      2. 8.3.2 SPI Mode Operation
        1. 8.3.2.1 Diagnostic Bit Behavior
      3. 8.3.3 Programmable Current Limit
        1. 8.3.3.1 Inrush Current Handling
      4. 8.3.4 DO_EN Feature
      5. 8.3.5 Protection Mechanisms
        1. 8.3.5.1 Overcurrent Protection
        2. 8.3.5.2 Short Circuit Protection
          1. 8.3.5.2.1 VS During Short-to-Ground
        3. 8.3.5.3 Inductive-Load Switching-Off Clamp
        4. 8.3.5.4 Inductive Load Demagnetization
        5. 8.3.5.5 Thermal Shutdown
        6. 8.3.5.6 Undervoltage protection on VS
        7. 8.3.5.7 Undervoltage Lockout on Low Voltage Supply (VDD_UVLO)
        8. 8.3.5.8 Power-Up and Power-Down Behavior
        9. 8.3.5.9 Reverse Current Blocking
      6. 8.3.6 Diagnostic Mechanisms
        1. 8.3.6.1 Current Sense
          1. 8.3.6.1.1 RSNS Value
            1. 8.3.6.1.1.1 SNS Output Filter
        2. 8.3.6.2 Fault Indication
          1. 8.3.6.2.1 Current Limit Behavior
        3. 8.3.6.3 Short-to-Battery and Open-Load Detection
        4. 8.3.6.4 On-State Wire-Break Detection
        5. 8.3.6.5 Off State Wire-Break Detection
        6. 8.3.6.6 ADC
      7. 8.3.7 LED Driver
    4. 8.4 Device Functional Modes
      1. 8.4.1 OFF/POR
      2. 8.4.2 INIT
      3. 8.4.3 Active
    5. 8.5 TPS274C65BS Available Registers List
    6. 8.6 TPS274C65 Registers
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 IEC 61000-4-5 Surge
        2. 9.2.2.2 Loss of GND
        3. 9.2.2.3 Paralleling Channels
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 静电放电警告
    5. 10.5 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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Inrush Current Handling

The current limit thresholds and the inrush current time duration can be set by SPI register writes to enable flexible inrush current control behavior. The following table shows the various options available.

Table 8-7 Inrush Current Limit Options

INRUSH_LIMIT[1]

INRUSH_LIMIT[0]

Current Limit During Inrush Duration Notes
0

0

Current limit at the level set by

register

The device will show constant current limit threshold in each channel at all times set by the register values
0 1 Current limit at 2x the level set by

register

The current is set higher during the duration of the inrush delay to support high inrush current loads like incandescent lamps - See figure (Case B) showing ex current limit behavior enabling into a short circuit

1

0

Current limit at 0.5x the level set by

register

Feature to limit the current and power dissipation during the charging large power supply capacitor loads.

1

1

Current limit fixed at 2.2 A threshold

An example current limit timing behavior is shown Figure 8-18.

GUID-20231017-SS0I-D6FH-PC9R-TLKTT1MPS1Q0-low.svgFigure 8-18 Inrush current limit set to 2x ILIM with a delay set by the ILIMDELAY register setting. Initially current load is higher than the twice the limit and then decreases to the 1x limit

The above waveform shows the current limiting behavior on enabling the outputs during the initial inrush period. The initial inrush current period when the current limit is higher enables two different system advantages when driving loads

  • Enables higher load current to be supported for a period of time in the order of milliseconds to drive high inrush current loads like incandescent bulb loads.
  • Enables fast capacitive load charging. In some situations, it is ideal to charge capacitive loads at a higher current than the DC current to ensure quick supply bring up. This architecture allows a module to quickly charge a capacitive load using the initial higher inrush current limit and then use a lower current limit to reliably protect the module under overload or short circuit conditions.

While in current limiting mode, at any level, the device will have a high power dissipation. If the FET temperature exceeds the over-temperature shutdown threshold, the device will turn off just the channel that is overloaded. After cooling down, the device will either latch off or re-try, depending on the latch configuration. If the device is turning off prematurely on start-up, it is recommended to improve the PCB thermal layout, lower the current limit to lower power dissipation, or decrease the inrush current (capacitive loading).