ZHCSMM1C April   2023  – February 2024 TPS274C65

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1.     7
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 SPI Timing Requirements
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Pin Diagrams
      2. 8.3.2 SPI Mode Operation
        1. 8.3.2.1 Diagnostic Bit Behavior
      3. 8.3.3 Programmable Current Limit
        1. 8.3.3.1 Inrush Current Handling
      4. 8.3.4 DO_EN Feature
      5. 8.3.5 Protection Mechanisms
        1. 8.3.5.1 Overcurrent Protection
        2. 8.3.5.2 Short Circuit Protection
          1. 8.3.5.2.1 VS During Short-to-Ground
        3. 8.3.5.3 Inductive-Load Switching-Off Clamp
        4. 8.3.5.4 Inductive Load Demagnetization
        5. 8.3.5.5 Thermal Shutdown
        6. 8.3.5.6 Undervoltage protection on VS
        7. 8.3.5.7 Undervoltage Lockout on Low Voltage Supply (VDD_UVLO)
        8. 8.3.5.8 Power-Up and Power-Down Behavior
        9. 8.3.5.9 Reverse Current Blocking
      6. 8.3.6 Diagnostic Mechanisms
        1. 8.3.6.1 Current Sense
          1. 8.3.6.1.1 RSNS Value
            1. 8.3.6.1.1.1 SNS Output Filter
        2. 8.3.6.2 Fault Indication
          1. 8.3.6.2.1 Current Limit Behavior
        3. 8.3.6.3 Short-to-Battery and Open-Load Detection
        4. 8.3.6.4 On-State Wire-Break Detection
        5. 8.3.6.5 Off State Wire-Break Detection
        6. 8.3.6.6 ADC
      7. 8.3.7 LED Driver
    4. 8.4 Device Functional Modes
      1. 8.4.1 OFF/POR
      2. 8.4.2 INIT
      3. 8.4.3 Active
    5. 8.5 TPS274C65BS Available Registers List
    6. 8.6 TPS274C65 Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 IEC 61000-4-5 Surge
        2. 9.2.2.2 Loss of GND
        3. 9.2.2.3 Paralleling Channels
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 静电放电警告
    5. 10.5 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
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订购信息

8.3.5.4 Inductive Load Demagnetization

When switching off an inductive load, the inductor can impose a negative voltage on the output of the switch. The TPS274C65 includes voltage clamps between VS and VOUT to limit the voltage across the FETs and demagnetize load inductance if there is any. The negative voltage applied at the OUT pin drives the discharge of inductor current. Figure 8-26 shows the device discharging a load of 100mH paralleled with 48Ω, resulting 500mA at the turn-off.

GUID-20231214-SS0I-GS5W-BGBF-VH5GDNWTRFML-low.png Figure 8-26 TPS274C65 Inductive Discharge (100mH + 48Ω)

The maximum acceptable load inductance is a function of the energy dissipated in the device and therefore the load current and the inductive load. The maximum energy and the load inductance the device can withstand for one pulse inductive dissipation at 125°C is shown in Figure 8-27. The device can withstand 40% of this energy for one million inductive repetitive pulses with a 2Hz repetitive pulse. If the application parameters exceed this device limit, use a protection device like a freewheeling diode to dissipate the energy stored in the inductor.

GUID-20231214-SS0I-S3HR-4MC2-HSSNM9HHWPPZ-low.svg Figure 8-27 Maximum Energy Dissipation (EAS) Allowed TJ, START = 125°C – Single Pulse, One Channel
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