ZHCSMM1C April   2023  – February 2024 TPS274C65

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
    1.     7
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 SPI Timing Requirements
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Pin Diagrams
      2. 8.3.2 SPI Mode Operation
        1. 8.3.2.1 Diagnostic Bit Behavior
      3. 8.3.3 Programmable Current Limit
        1. 8.3.3.1 Inrush Current Handling
      4. 8.3.4 DO_EN Feature
      5. 8.3.5 Protection Mechanisms
        1. 8.3.5.1 Overcurrent Protection
        2. 8.3.5.2 Short Circuit Protection
          1. 8.3.5.2.1 VS During Short-to-Ground
        3. 8.3.5.3 Inductive-Load Switching-Off Clamp
        4. 8.3.5.4 Inductive Load Demagnetization
        5. 8.3.5.5 Thermal Shutdown
        6. 8.3.5.6 Undervoltage protection on VS
        7. 8.3.5.7 Undervoltage Lockout on Low Voltage Supply (VDD_UVLO)
        8. 8.3.5.8 Power-Up and Power-Down Behavior
        9. 8.3.5.9 Reverse Current Blocking
      6. 8.3.6 Diagnostic Mechanisms
        1. 8.3.6.1 Current Sense
          1. 8.3.6.1.1 RSNS Value
            1. 8.3.6.1.1.1 SNS Output Filter
        2. 8.3.6.2 Fault Indication
          1. 8.3.6.2.1 Current Limit Behavior
        3. 8.3.6.3 Short-to-Battery and Open-Load Detection
        4. 8.3.6.4 On-State Wire-Break Detection
        5. 8.3.6.5 Off State Wire-Break Detection
        6. 8.3.6.6 ADC
      7. 8.3.7 LED Driver
    4. 8.4 Device Functional Modes
      1. 8.4.1 OFF/POR
      2. 8.4.2 INIT
      3. 8.4.3 Active
    5. 8.5 TPS274C65BS Available Registers List
    6. 8.6 TPS274C65 Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 IEC 61000-4-5 Surge
        2. 9.2.2.2 Loss of GND
        3. 9.2.2.3 Paralleling Channels
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 静电放电警告
    5. 10.5 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.2 ESD Ratings

VALUE UNIT
VESD1 Electrostatic discharge Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001(1)		 All pins except VS and VOUTx ±2000 V
VESD2 Electrostatic discharge Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001(1)		 VS and VOUTx with respect to GND ±4000 V
VESD3 Electrostatic discharge Charged device model (CDM), per ANSI/ESDA/JEDEC JS-002, all pins(2) All pins ±500 V
Vsurge Electrostatic discharge Surge protection with 42 Ω, per IEC 61000-4-5; 1.2/50 μs VS, OUTx ±1000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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