ZHCSJN4C February   2018  – February 2020 TPS2HB16-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
    2. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. Table 3. Absolute Maximum Ratings
    2. Table 4. ESD Ratings
    3. Table 5. Recommended Operating Conditions
    4. Table 6. Thermal Information
    5. Table 7. Electrical Characteristics
    6. Table 8. SNS Timing Characteristics
    7. Table 9. Switching Characteristics
    8. 7.1      Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Programmable Current Limit
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB During Short-to-Ground
        3. 9.3.1.3 Voltage Transients
          1. 9.3.1.3.1 Load Dump
        4. 9.3.1.4 Driving Inductive Loads
        5. 9.3.1.5 Reverse Battery
        6. 9.3.1.6 Fault Event – Timing Diagrams (Version A/B)
      2. 9.3.2 Fault Event – Timing Diagrams - Version F
      3. 9.3.3 Diagnostic Mechanisms
        1. 9.3.3.1 VOUTx Short-to-Battery and Open-Load
          1. 9.3.3.1.1 Detection With Switch Enabled
          2. 9.3.3.1.2 Detection With Switch Disabled
        2. 9.3.3.2 SNS Output
          1. 9.3.3.2.1 RSNS Value
            1. 9.3.3.2.1.1 High Accuracy Load Current Sense
            2. 9.3.3.2.1.2 SNS Output Filter
        3. 9.3.3.3 Fault Indication and SNS Mux
        4. 9.3.3.4 Resistor Sharing
        5. 9.3.3.5 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 AEC – Q100-012 Short Circuit Reliability
      7. 10.1.7 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
      4. 10.2.4 Design Requirements
      5. 10.2.5 Detailed Design Procedure
      6. 10.2.6 Application Curves
    3. 10.3 Typical Application
      1. 10.3.1 Design Requirements
      2. 10.3.2 Detailed Design Procedure
        1. 10.3.2.1 Thermal Considerations
        2. 10.3.2.2 RILIM Calculation
        3. 10.3.2.3 Diagnostics
          1. 10.3.2.3.1 Selecting the RSNS Value
      3. 10.3.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Table 7. Electrical Characteristics

VBB = 6 V to 18 V, TJ = -40°C to 150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE AND CURRENT
VDSCLAMP VDS clamp voltage 40 46 V
VBBCLAMP VBB clamp voltage 58 76 V
VUVLOF VBB undervoltage lockout falling Measured with respect to the GND pin of the device 2.0 3 V
VUVLOR VBB undervoltage lockout rising Measured with respect to the GND pin of the device 2.2 3 V
ISB Standby current (total device leakage including both MOSFET channels) VBB = 13.5 V, TJ = 25°C
VENx = VDIA_EN = 0 V, VOUT = 0 V		 0.5 µA
VBB = 13.5 V, TJ = 125°C,
VENx = VDIA_EN = 0 V, VOUT = 0 V		 4 µA
ILNOM Continuous load current, per channel Two channels enabled, TAMB = 70°C 5 A
One channel enabled, TAMB = 70°C 7 A
IOUT(standby) Output leakage current (per channel) VBB = 13.5 V, TJ = 25°C
VENx = VDIA_EN = 0 V, VOUT = 0 V		 0.01 0.5 µA
VBB = 13.5 V, TJ = 125°C
VENx = VDIA_EN = 0 V, VOUT = 0 V		 1.5 µA
IDIA Current consumption in diagnostic mode VBB = 13.5 V, ISNS = 0 mA
VENx = 0 V, VDIA_EN = 5 V, VOUT = 0V		 3 6 mA
IQ Quiescent current VBB = 13.5 V
VENx = VDIA_EN = 5 V, IOUTx = 0 A		 3 6 mA
tSTBY Standby mode delay time VENx = VDIA_EN = 0 V to standby 12 17 22 ms
RON CHARACTERISTICS
RON On-resistance
(Includes MOSFET and package)		 TJ = 25°C, 6 V ≤ VBB ≤ 28 V, IOUT1 = IOUT2 > 1 A 16 mΩ
TJ = 150°C, 6 V ≤ VBB ≤ 28 V, IOUT1 = IOUT2 > 1 A 40 mΩ
TJ = 25°C, 3 V ≤ VBB ≤ 6 V, IOUT1 = IOUT2 > 1 A 30 mΩ
RON(REV) On-resistance during reverse polarity TJ = 25°C, -18 V ≤ VBB ≤ -8 V 16 mΩ
TJ = 105°C, -18 V ≤ VBB ≤ -8 V 40 mΩ
CURRENT SENSE CHARACTERISTICS
KSNS Current sense ratio
IOUTx / ISNS 		IOUTX = 1 A 3000
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = X IOUT = 6 A 2.000 mA
–5 5.3 %
IOUT = 3 A 1.000 mA
–5 5.3 %
IOUT = 1 A 0.333 mA
–5 5.3 %
IOUT = 300 mA 0.1 mA
–6 6.3 %
IOUT = 100 mA 0.0322 mA
–9 9.6 %
IOUT = 50 mA 0.0154 mA
–19.5 18.7 %
IOUT = 20 mA 0.0054 mA
-59.3 53.1 %
TJ SENSE CHARACTERISTICS
ISNST Temperature sense current
Device Version A/B		 VDIA_EN = 5 V, VSEL1 = 5 V, VSEL2 = 0 V TJ = -40°C 0.00 0.12 0.29 mA
TJ = 25°C 0.68 0.85 1.02 mA
TJ = 85°C 1.25 1.52 1.79 mA
TJ = 125°C 1.61 1.96 2.31 mA
TJ = 150°C 1.80 2.25 2.70 mA
dISNST/dT Coefficient 0.011 mA/°C
SNS CHARACTERISTICS
ISNSFH ISNS fault high-level VDIA_EN = 5 V, VSEL1 = 0 V, VSEL2 = X 4 4.5 5.3 mA
ISNSleak ISNS leakage VDIA_EN = 0 V 1 µA
CURRENT LIMIT CHARACTERISTICS
ICL Current Limit Threshold Device Version A, TJ = -40°C to 150°C RILIM = GND, open, or out of range 29.1 A
RILIM = 5 kΩ 17.4 22 29.3 A
RILIM = 25 kΩ 2.66 4.1 5.46 A
Device Version B, TJ = -40°C to 150°C RILIM = GND, open, or out of range 67.5 A
RILIM = 5 kΩ 38 48.5 65 A
RILIM = 25 kΩ 8.1 10.3 13.7 A
Device Version F TJ = -40°C to 60°C 51.65 60 76.32 A
TJ = 150°C 42.16 48.00 57.60 A
KCL Current Limit Ratio Version A 102 A * kΩ
Version B 258 A * kΩ
FAULT CHARACTERISTICS
VOL Open-load (OL) detection voltage VENx = 0 V, VDIA_EN = 5 V 2 3 4 V
tOL1 OL and STB indication-time from ENx falling VENx = 5 V to 0 V, VDIA_EN = 5 V, VSEL1 = 0 V(1)
IOUT = 0 mA, VOUTx = 4 V		 300 500 700 µs
tOL2 OL and STB indication-time from DIA_EN rising VENx = 0 V, VDIA_EN = 0 V to 5 V, VSEL1 = 0 V(1)
IOUT = 0 mA, VOUTx = 4 V		 50 µs
tOL3 OL and STB indication-time from VOUT rising VENx = 0 V, VDIA_EN = 5 V, VSEL1 = 0 V(1)
IOUT = 0 mA, VOUTx = 0 V to 4 V		 50 µs
TABS Thermal shutdown 150 °C
TREL Relative thermal shutdown 50 °C
THYS Thermal shutdown hysteresis 28 °C
tFAULT Fault shutdown indication-time VDIA_EN = 5 V
Time between switch shutdown and ISNS settling at ISNSFH 		50 µs
tRETRY Retry time Time from fault shutdown until switch re-enable (thermal shutdown or current limit). 1 2 3 ms
EN1 AND EN2 PIN CHARACTERISTICS(2)
VIL, ENx Input voltage low-level No GND network diode 0.8 V
VIH, ENx Input voltage high-level No GND network diode 2 V
VIHYS, ENx Input voltage hysteresis 350 mV
RENx Internal pulldown resistor 0.5 1 2 MΩ
IIL, EN Input current low-level VEN = 0.8 V 0.8 µA
IIH, EN Input current high-level VEN = 5 V 5 µA
DIA_EN PIN CHARACTERISTICS(2)
VIL, DIA_EN Input voltage low-level No GND network diode 0.8 V
VIH, DIA_EN Input voltage high-level No GND network diode 2.0 V
VIHYS, DIA_EN Input voltage hysteresis 350 mV
RDIA_EN Internal pulldown resistor 0.5 1 2 MΩ
IIL, DIA_EN Input current low-level VDIA_EN = 0.8 V 0.8 µA
IIH, DIA_EN Input current high-level VDIA_EN = 5 V 5.0 µA
SEL1 AND SEL2 PIN Characteristics
VIL, SELx Input voltage low-level No GND network diode 0.8 V
VIH, SELx Input voltage high-level No GND network diode 2 V
VIHYS, SELx Input voltage hysteresis 350 mV
RSELx Internal pulldown resistor 0.5 1 2 MΩ
IIL, SELX Input current low-level VSELX = 0.8 V 0.8 µA
IIH, SELX Input current high-level VSELX = 5 V 5 µA
LATCH PIN CHARACTERISTICS(2)
VIL, LATCH Input voltage low-level No GND network diode 0.8 V
VIH, LATCH Input voltage high-level No GND network diode 2.0 V
VIHYS, LATCH Input voltage hysteresis 350 mV
RLATCH Internal pulldown resistor 0.5 1 2 MΩ
IIL, LATCH Input current low-level VLATCH = 0.8 V 0.8 µA
IIH, LATCH Input current high-level VLATCH = 5 V 5.0 µA
(1) SELx must be set to select the relevant channel. Diagnostics are performed on Channel 1 when SELx = 00 and diagnostics are performed on channel 2 when SELx =01
(2) VBB = 3 V to 28 V
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