ZHCSJN4C February   2018  – February 2020 TPS2HB16-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
    2. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. Table 3. Absolute Maximum Ratings
    2. Table 4. ESD Ratings
    3. Table 5. Recommended Operating Conditions
    4. Table 6. Thermal Information
    5. Table 7. Electrical Characteristics
    6. Table 8. SNS Timing Characteristics
    7. Table 9. Switching Characteristics
    8. 7.1      Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Programmable Current Limit
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB During Short-to-Ground
        3. 9.3.1.3 Voltage Transients
          1. 9.3.1.3.1 Load Dump
        4. 9.3.1.4 Driving Inductive Loads
        5. 9.3.1.5 Reverse Battery
        6. 9.3.1.6 Fault Event – Timing Diagrams (Version A/B)
      2. 9.3.2 Fault Event – Timing Diagrams - Version F
      3. 9.3.3 Diagnostic Mechanisms
        1. 9.3.3.1 VOUTx Short-to-Battery and Open-Load
          1. 9.3.3.1.1 Detection With Switch Enabled
          2. 9.3.3.1.2 Detection With Switch Disabled
        2. 9.3.3.2 SNS Output
          1. 9.3.3.2.1 RSNS Value
            1. 9.3.3.2.1.1 High Accuracy Load Current Sense
            2. 9.3.3.2.1.2 SNS Output Filter
        3. 9.3.3.3 Fault Indication and SNS Mux
        4. 9.3.3.4 Resistor Sharing
        5. 9.3.3.5 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 AEC – Q100-012 Short Circuit Reliability
      7. 10.1.7 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
      4. 10.2.4 Design Requirements
      5. 10.2.5 Detailed Design Procedure
      6. 10.2.6 Application Curves
    3. 10.3 Typical Application
      1. 10.3.1 Design Requirements
      2. 10.3.2 Detailed Design Procedure
        1. 10.3.2.1 Thermal Considerations
        2. 10.3.2.2 RILIM Calculation
        3. 10.3.2.3 Diagnostics
          1. 10.3.2.3.1 Selecting the RSNS Value
      3. 10.3.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.3.1.3 Voltage Transients

The TPS2HB16-Q1 device describes two types of voltage clamps which protect the FET against system-level voltage transients. The two different clamps are shown in Figure 36.

The clamp from VBB to GND is primarily used to protect the controller from positive transients on the supply line (for example, ISO7637-2). The clamp from VBB to VOUT is primarily used to limit the voltage across the FET when switching off an inductive load. If the voltage potential from VBB to GND exceeds the VBB clamp level, the clamp will allow current to flow through the device from VBB to GND (Path 2). If the voltage potential from VBB to VOUT exceeds the clamping voltage, the power FET will allow current to flow from VBB to VOUT (Path 3). Additional capacitance from VBB to GND can increase the reliability of the system during ISO 7637 pulse 2-A testing.

TPS2HB16-Q1 vltg_trans_02_slvsd84.gifFigure 36. Current Path During Supply Voltage Transient
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