ZHCSJN4C February   2018  – February 2020 TPS2HB16-Q1

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     简化原理图
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
    2. 6.1 Recommended Connections for Unused Pins
  7. Specifications
    1. Table 3. Absolute Maximum Ratings
    2. Table 4. ESD Ratings
    3. Table 5. Recommended Operating Conditions
    4. Table 6. Thermal Information
    5. Table 7. Electrical Characteristics
    6. Table 8. SNS Timing Characteristics
    7. Table 9. Switching Characteristics
    8. 7.1      Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Programmable Current Limit
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB During Short-to-Ground
        3. 9.3.1.3 Voltage Transients
          1. 9.3.1.3.1 Load Dump
        4. 9.3.1.4 Driving Inductive Loads
        5. 9.3.1.5 Reverse Battery
        6. 9.3.1.6 Fault Event – Timing Diagrams (Version A/B)
      2. 9.3.2 Fault Event – Timing Diagrams - Version F
      3. 9.3.3 Diagnostic Mechanisms
        1. 9.3.3.1 VOUTx Short-to-Battery and Open-Load
          1. 9.3.3.1.1 Detection With Switch Enabled
          2. 9.3.3.1.2 Detection With Switch Disabled
        2. 9.3.3.2 SNS Output
          1. 9.3.3.2.1 RSNS Value
            1. 9.3.3.2.1.1 High Accuracy Load Current Sense
            2. 9.3.3.2.1.2 SNS Output Filter
        3. 9.3.3.3 Fault Indication and SNS Mux
        4. 9.3.3.4 Resistor Sharing
        5. 9.3.3.5 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 AEC – Q100-012 Short Circuit Reliability
      7. 10.1.7 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
      4. 10.2.4 Design Requirements
      5. 10.2.5 Detailed Design Procedure
      6. 10.2.6 Application Curves
    3. 10.3 Typical Application
      1. 10.3.1 Design Requirements
      2. 10.3.2 Detailed Design Procedure
        1. 10.3.2.1 Thermal Considerations
        2. 10.3.2.2 RILIM Calculation
        3. 10.3.2.3 Diagnostics
          1. 10.3.2.3.1 Selecting the RSNS Value
      3. 10.3.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Detailed Design Procedure

The another typical bulb test is to have the bulbs at room temperature (25°C) and the device heated up to 105°C. This test is designed see if the device can drive the bulbs without hitting thermal shutdown due to the current draw of the bulbs. The passing criteria is that the bulb illuminates when the device enables the channels and the device does not go into thermal shutdown. Figure 51 shows the current waveform of this test and as it can be seen the bulb comes on and stays on without hitting thermal shutdown. Notice that the current is lower in this condition than the inrush condition. This is due to the bulbs effective capacitance being lower at higher temperatures as expected.