ZHCSJN4C February   2018  – February 2020 TPS2HB16-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
    2. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. Table 3. Absolute Maximum Ratings
    2. Table 4. ESD Ratings
    3. Table 5. Recommended Operating Conditions
    4. Table 6. Thermal Information
    5. Table 7. Electrical Characteristics
    6. Table 8. SNS Timing Characteristics
    7. Table 9. Switching Characteristics
    8. 7.1      Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Programmable Current Limit
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB During Short-to-Ground
        3. 9.3.1.3 Voltage Transients
          1. 9.3.1.3.1 Load Dump
        4. 9.3.1.4 Driving Inductive Loads
        5. 9.3.1.5 Reverse Battery
        6. 9.3.1.6 Fault Event – Timing Diagrams (Version A/B)
      2. 9.3.2 Fault Event – Timing Diagrams - Version F
      3. 9.3.3 Diagnostic Mechanisms
        1. 9.3.3.1 VOUTx Short-to-Battery and Open-Load
          1. 9.3.3.1.1 Detection With Switch Enabled
          2. 9.3.3.1.2 Detection With Switch Disabled
        2. 9.3.3.2 SNS Output
          1. 9.3.3.2.1 RSNS Value
            1. 9.3.3.2.1.1 High Accuracy Load Current Sense
            2. 9.3.3.2.1.2 SNS Output Filter
        3. 9.3.3.3 Fault Indication and SNS Mux
        4. 9.3.3.4 Resistor Sharing
        5. 9.3.3.5 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 AEC – Q100-012 Short Circuit Reliability
      7. 10.1.7 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
      4. 10.2.4 Design Requirements
      5. 10.2.5 Detailed Design Procedure
      6. 10.2.6 Application Curves
    3. 10.3 Typical Application
      1. 10.3.1 Design Requirements
      2. 10.3.2 Detailed Design Procedure
        1. 10.3.2.1 Thermal Considerations
        2. 10.3.2.2 RILIM Calculation
        3. 10.3.2.3 Diagnostics
          1. 10.3.2.3.1 Selecting the RSNS Value
      3. 10.3.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 商标
    5. 13.5 静电放电警告
    6. 13.6 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10.3.2.1 Thermal Considerations

The DC current in each channel under maximum load power condition will be around 4.1 A. Both heater loads can be ON at the same time, so the case where both channels are enabled simultaneously is considered to assume worst case heating.

Power dissipation in the switch is calculated in Equation 4. RON is assumed to be 40 mΩ because this is the maximum specification at high temperature. In practice, RON will almost always be lower.

Equation 4. PFET = I2 × RON
Equation 5. PFET = (4.1 A)2 × 40 mΩ = 0.67 W

If both channels are enabled, then the total power dissipation is 1.34 W. The junction temperature of the device can be calculated using Equation 6 and the RθJA value from the Specifications section.

Equation 6. TJ = TA + RθJA × PFET
TJ = 70°C + 32.5°C/W × 1.34 W = 113.5°C

The maximum junction temperature rating for the TPS2HB16-Q1 device is TJ = 150°C. Based on the above example calculation, the device temperature will stay below the maximum rating.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |