ZHCSAK8J December 2003 – June 2022 TPS40054 , TPS40055 , TPS40057
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Setting the Switching Frequency (Programming the Clock Oscillator)
- 7.3.2 Programming The Ramp Generator Circuit
- 7.3.3 UVLO Operation
- 7.3.4 BP5 and BP10 Internal Voltage Regulators
- 7.3.5 Programming Soft Start
- 7.3.6 Programming Current Limit
- 7.3.7 Synchronizing to an External Supply
- 7.3.8 Loop Compensation
- 7.4 Device Functional Modes
-
8 Application and Implementation
- 8.1 Application Information
- 8.2
Typical Application
- 8.2.1 Design Requirements
- 8.2.2
Detailed Design Procedure
- 8.2.2.1 Calculate Maximum and Minimum Duty Cycles
- 8.2.2.2 Select Switching Frequency
- 8.2.2.3 Select ΔI
- 8.2.2.4 Calculate the High-Side MOSFET Power Losses
- 8.2.2.5 Calculate Synchronous Rectifier Losses
- 8.2.2.6 Calculate the Inductor Value
- 8.2.2.7 Set the Switching Frequency
- 8.2.2.8 Program the Ramp Generator Circuit
- 8.2.2.9 Calculate the Output Capacitance (CO)
- 8.2.2.10 Calculate the Soft-Start Capacitor (CSS/SD)
- 8.2.2.11 Calculate the Current Limit Resistor (RILIM)
- 8.2.2.12 Calculate Loop Compensation Values
- 8.2.2.13 Calculate the Boost and BP10V Bypass Capacitance
- 8.2.3 Application Curves
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
8.2.2.5 Calculate Synchronous Rectifier Losses
The synchronous rectifier MOSFET has two loss components, conduction, and diode reverse recovery losses. The conduction losses are due to IRMS losses as well as body diode conduction losses during the dead time associated with the anti-cross conduction delay.
The IRMS current through the synchronous rectifier from Equation 37:
The synchronous MOSFET conduction loss from Equation 33 is:
The body diode conduction loss from Equation 38 is:
The body diode reverse recovery loss from Equation 39 is:
The total power dissipated in the synchronous rectifier MOSFET from Equation 40 is:
The junction temperature of the synchronous rectifier at 85°C is:
In typical applications, paralleling the synchronous rectifier MOSFET with a Schottky rectifier increases the overall converter efficiency by approximately 2% due to the lower power dissipation during the body diode conduction and reverse recovery periods.