MOSFETs are susceptible to dv/dt turn-on particularly in high-voltage (V_DS) applications. The turn-on is caused by the capacitor divider that is formed by C_GD and C_GS. High dv/dt conditions and drain-to-source voltage on the MOSFET causes current flow through C_GD and causes the gate-to-source voltage to rise. If the gate-to-source voltage rises above the MOSFET threshold voltage, the MOSFET turns on, resulting in large shoot-through currents. Therefore, the SR MOSFET should be chosen so that the Q_GD charge is smaller than the Q_GS charge.