ZHCS826C January   2012  – November 2023 TPS40170-Q1

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  LDO Linear Regulators and Enable
      2. 6.3.2  Input Undervoltage Lockout (UVLO)
      3. 6.3.3  Equations for Programming the Input UVLO
      4. 6.3.4  Overcurrent Protection and Short-Circuit Protection (OCP and SCP)
      5. 6.3.5  Oscillator and Voltage Feed-Forward
        1. 6.3.5.1 Calculating the Timing Resistance (RRT)
      6. 6.3.6  Feed-Forward Oscillator Timing Diagram
      7. 6.3.7  Soft-Start and Fault-Logic
        1. 6.3.7.1 Soft-Start During Overcurrent Fault
        2. 6.3.7.2 Equations for Soft-Start and Restart Time
      8. 6.3.8  Overtemperature Fault
      9. 6.3.9  Tracking
      10. 6.3.10 Adaptive Drivers
      11. 6.3.11 Start-Up Into Pre-Biased Output
      12. 6.3.12 31
      13. 6.3.13 Power Good (PGOOD)
      14. 6.3.14 PGND and AGND
      15. 6.3.15 Bootstrap Capacitor
      16. 6.3.16 Bypass and Filtering
    4. 6.4 Device Functional Modes
      1. 6.4.1 Frequency Synchronization
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1  Select A Switching Frequency
        2. 7.2.2.2  Inductor Selection (L1)
        3. 7.2.2.3  Output Capacitor Selection (C9)
        4. 7.2.2.4  Peak Current Rating of Inductor
        5. 7.2.2.5  Input Capacitor Selection (C1, C6)
        6. 7.2.2.6  MOSFET Switch Selection (Q1, Q2)
        7. 7.2.2.7  Timing Resistor (R7)
        8. 7.2.2.8  UVLO Programming Resistors (R2, R6)
        9. 7.2.2.9  Bootstrap Capacitor (C7)
        10. 7.2.2.10 VIN Bypass Capacitor (C18)
        11. 7.2.2.11 VBP Bypass Capacitor (C19)
        12. 7.2.2.12 SS Timing Capacitor (C15)
        13. 7.2.2.13 ILIM Resistor (R19, C17)
        14. 7.2.2.14 SCP Multiplier Selection (R5)
        15. 7.2.2.15 Feedback Divider (R10, R11)
        16. 7.2.2.16 Compensation: (R4, R13, C13, C14, C21)
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Bootstrap Resistor
      2. 7.3.2 SW-Node Snubber Capacitor
      3. 7.3.3 Input Resistor
      4. 7.3.4 LDRV Gate Capacitor
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 接收文档更新通知
    4. 8.4 支持资源
    5. 8.5 Trademarks
    6. 8.6 静电放电警告
    7. 8.7 术语表
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Output Capacitor Selection (C9)

The selection of the output capacitor is typically driven by the output transient response. Equation 21 and Equation 22 overestimate the voltage deviation to account for delays in the loop bandwidth and can be used to determine the required output capacitance:

Equation 21. GUID-3E22F409-356B-4E04-BC1D-93A1EB2D4BA0-low.gif
Equation 22. GUID-F76F82B9-5CF7-4CA0-868B-CA80BD6D436E-low.gif

If VIN(min) > 2 × VOUT, use overshoot to calculate minimum output capacitance. If VIN(min) < 2 × VOUT, use undershoot to calculate minimum output capacitance.

Equation 23. GUID-E386509B-1132-494B-A0B7-E71083DCC777-low.gif

With a minimum capacitance, the maximum allowable ESR is determined by the maximum ripple voltage and is approximated by Equation 24.

Equation 24. GUID-6AF1B907-1C3B-4D37-8FF3-CDF9539FC247-low.gif

Two 1210, 22-µF, 16-V X7R ceramic capacitors plus two 0805 10-µF, 16-V X7R ceramic capacitors are selected to provide more than 59 µF of minimum capacitance (including tolerance and dc bias derating) and less than 47 mΩ of ESR (parallel ESR of approximately 4 mΩ).