ZHCSH96H MARCH 2007 – May 2019 TPS40192 , TPS40193
PRODUCTION DATA.
The devices use the negative drop across the low-side MOSFET during the OFF time to measure the inductor current. Equation 25 approximates the voltage drop across the low-side MOSFET.
The internal temperature coefficient of the TPS40192 device helps compensate for the MOSFET on-resistance (RDS(on) ) temperature coefficient. For this design select the short circuit protection voltage threshold of 110 mV by selecting R9 = 3.9 kΩ.