ZHCSSZ6F august 2008 – june 2020 TPS40210-Q1 , TPS40211-Q1
PRODUCTION DATA
- 1
- 1 特性
- 2 应用
- 3 说明
- 5
- 4 Revision History
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Minimum On-Time and Off-Time Considerations
- 7.3.2 Current Sense and Overcurrent
- 7.3.3 Current Sense and Subharmonic Instability
- 7.3.4 Current Sense Filtering
- 7.3.5 Soft Start
- 7.3.6 BP Regulator
- 7.3.7 Shutdown (DIS/ EN Pin)
- 7.3.8 Control Loop Considerations
- 7.3.9 Gate Drive Circuit
- 7.3.10 TPS40211-Q1
- 7.4 Device Functional Modes
-
8 Application and Implementation
- 8.1 Application Information
- 8.2
Typical Application
- 8.2.1 Design Requirements
- 8.2.2
Detailed Design Procedure
- 8.2.2.1 Duty Cycle Estimation
- 8.2.2.2 Inductor Selection
- 8.2.2.3 Rectifier Diode Selection
- 8.2.2.4 Output Capacitor Selection
- 8.2.2.5 Input Capacitor Selection
- 8.2.2.6 Current Sense and Current Limit
- 8.2.2.7 Current Sense Filter
- 8.2.2.8 Switching MOSFET Selection
- 8.2.2.9 Feedback Divider Resistors
- 8.2.2.10 Error Amplifier Compensation
- 8.2.2.11 R-C Oscillator
- 8.2.2.12 Soft-Start Capacitor
- 8.2.2.13 Regulator Bypass
- 8.2.3 Application Curves
- 9 Power Supply Recommendations
- 10Layout
- 11Device and Documentation Support
- 12Mechanical, Packaging, and Orderable Information
7.3.9 Gate Drive Circuit
Some applications benefit from the addition of a resistor connected between the GDRV pin and the gate of the switching MOSFET. In applications that have particularly stringent load regulation (under 0.75%) requirements and operate from input voltages above 5 V, or are sensitive to pulse jitter in the discontinuous conduction region, this resistor is recommended. The recommended starting point for the value of this resistor can be calculated from Equation 29.
Equation 29. 
where
- QG is the MOSFET total gate charge at 8-V VGS in nC
- RG is the suggested starting point gate resistance in Ω
Figure 7-7 Gate Drive Resistor