Below are the MOSFET layout considerations for.
Please refer to the data sheet of the MOSFET for more layout information.
- Input bypass capacitors should be physically as close as possible to the VIN and GND pins of the MOSFET device. In addition, a high-frequency bypass capacitor on the MOSFET input voltage pins can help to reduce switching ringing.
- Minimize the SW copper area for best noise performance. Route sensitive traces away from SW, as it contains fast switching voltage and lends easily to capacitive coupling.