SLVSB48C August   2012  – July 2016 TPS43333-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1. 3.1 Typical Application Diagram
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Buck Controllers: Normal Mode PWM Operation
        1. 7.3.1.1 Frequency Selection and External Synchronization
        2. 7.3.1.2 Enable Inputs
        3. 7.3.1.3 Feedback Inputs
        4. 7.3.1.4 Soft-Start Inputs
        5. 7.3.1.5 Current-Mode Operation
        6. 7.3.1.6 Current Sensing and Current Limit With Foldback
        7. 7.3.1.7 Slope Compensation
        8. 7.3.1.8 Power-Good Outputs and Filter Delays
        9. 7.3.1.9 Light-Load PFM Mode
      2. 7.3.2 Boost Controller
      3. 7.3.3 SYNC Pin
      4. 7.3.4 Gate-Driver Supply (VREG, EXTSUP)
      5. 7.3.5 External P-Channel Drive (GC2) and Reverse-Battery Protection
      6. 7.3.6 Undervoltage Lockout and Overvoltage Protection
      7. 7.3.7 Thermal Protection
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Application Example 1
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Boost Component Selection
          2. 8.2.1.2.2  Boost Maximum Input Current IIN_MAX
          3. 8.2.1.2.3  Boost Inductor Selection, L
          4. 8.2.1.2.4  Inductor Ripple Current, IRIPPLE
          5. 8.2.1.2.5  Peak Current in Low-Side FET, IPEAK
          6. 8.2.1.2.6  Right Half-Plane Zero RHP Frequency, fRHP
          7. 8.2.1.2.7  Output Capacitor, CO
          8. 8.2.1.2.8  Bandwidth of Boost Converter, fC
          9. 8.2.1.2.9  Output Ripple Voltage Due to Load Transients, ∆VO
          10. 8.2.1.2.10 Selection of Components for Type II Compensation
          11. 8.2.1.2.11 Input Capacitor, CIN
          12. 8.2.1.2.12 Output Schottky Diode D1 Selection
          13. 8.2.1.2.13 Low-Side MOSFET (BOT_SW3)
          14. 8.2.1.2.14 BuckA Component Selection
            1. 8.2.1.2.14.1 Minimum On-Time, tON min
            2. 8.2.1.2.14.2 Current-Sense Resistor RSENSE
          15. 8.2.1.2.15 Inductor Selection L
          16. 8.2.1.2.16 Inductor Ripple Current IRIPPLE
          17. 8.2.1.2.17 Output Capacitor COUT
          18. 8.2.1.2.18 Bandwidth of Buck Converter fC
          19. 8.2.1.2.19 Selection of Components for Type II Compensation
          20. 8.2.1.2.20 Resistor Divider Selection for Setting VOUTA Voltage
          21. 8.2.1.2.21 BuckB Component Selection
          22. 8.2.1.2.22 Resistor Divider Selection for Setting VO Voltage
          23. 8.2.1.2.23 BuckX High-Side and Low-Side N-Channel MOSFETs
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Application Example 2
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Component Proposals
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Boost Converter
      2. 10.1.2 Buck Converter
      3. 10.1.3 Other Considerations
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation Derating Profile, 38-Pin HTTSOP PowerPAD Package
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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订购信息

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

The TPS43333-Q1 is ideally suited as a pre-regulator stage with low Iq requirements and for applications that must survive supply drops due to cranking events. The integrated boost controller allows the devices to operate down to 2 V at the input without seeing a drop on the buck regulator output stages. Below component values and calculations are a good starting point and theoretical representation of the values for use in the application; improving the performance of the device may require further optimization of the derived components.

8.2 Typical Applications

8.2.1 Application Example 1

TPS43333-Q1 appinfo_schematic_slvsb48.gif Figure 24. Simplified Application Schematic, Example 1

8.2.1.1 Design Requirements

Table 5 lists the design-goal parameters.

Table 5. Design Parameters

PARAMETER VBUCK A VBUCK B BOOST
Input voltage VIN = 6 V to 30 V
12 V (typical)
VIN = 6 V to 30 V
12 V (typical)
VBAT = 5 V (cranking pulse input) to 30 V
Output voltage, VO 5 V 3.3 V 10 V
Maximum output current, IO 3 A 2 A 2.5 A
Load step output tolerance, ∆VO ±0.2 V ±0.12 V ±0.5 V
Current output load step, ∆IO 0.1 A to 3 A 0.1 A to 2 A 0.1 A to 2.5 A
Converter switching frequency, fSW 400 kHz 400 kHz 200 kHz

8.2.1.2 Detailed Design Procedure

The following sections list the design process and component selection for the TPS43333-Q1.

This is a starting point and theoretical representation of the values for use in the application; improving the performance of the device may require further optimization of the derived components.

Table 6. Application Example 1 – Component Proposals

NAME COMPONENT PROPOSAL VALUE
L1 MSS1278T-392NL (Coilcraft) 3.9 µH
L2 MSS1278T-822ML (Coilcraft) 8.2 µH
L3 MSS1278T-153ML (Coilcraft) 15 µH
D1 SK103 (Micro Commercial Components)
TOP_SW3 IRF7416 (International Rectifier)
TOP_SW1, TOP_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW1, BOT_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW3 IRFR3504ZTRPBF (International Rectifier)
COUT1 EEVFK1J681M (Panasonic) 680 µF
COUTA, COUTB ECASD91A107M010K00 (Murata) 100 µF
CIN EEEFK1V331P (Panasonic) 220 µF

8.2.1.2.1 Boost Component Selection

A boost converter operating in continuous-conduction mode (CCM) has a right-half-plane (RHP) zero in its transfer function. The RHP zero relates inversely to the load current and inductor value and directly to the input voltage. The RHP zero limits the maximum bandwidth achievable for the boost regulator. If the bandwidth is too close to the RHP zero frequency, the regulator may become unstable.

Thus, for high-power systems with low input voltages, choose a low inductor value. A low value increases the amplitude of the ripple currents in the N-channel MOSFET, the inductor, and the capacitors for the boost regulator. Select these components with the ripple-to-RHP zero tradeoff in mind and considering the power dissipation effects in the components due to parasitic series resistance.

A boost converter that operates always in the discontinuous mode does not contain the RHP zero in its transfer function. However, designing for the discontinuous mode demands an even lower inductor value that has high ripple currents. Also, ensure that the regulator never enters the continuous-conduction mode; otherwise, it may become unstable.

TPS43333-Q1 compensation_cx_components_boost_lvsa82.gif Figure 25. Boost Compensation Components

8.2.1.2.2 Boost Maximum Input Current IIN_MAX

The maximum input current flows at the minimum input voltage and maximum load in Equation 5. The efficiency for VBAT = 5 V at 2.5 A is 80%, based on the Typical Characteristics.

Equation 5. TPS43333-Q1 eq80_lvsa82.gif

Hence the values in Equation 6.

Equation 6. TPS43333-Q1 eq81_lvsa82.gif

8.2.1.2.3 Boost Inductor Selection, L

Allow input ripple current of 40% of IIN max at VBAT = 5 V as seen in Equation 7.

Equation 7. TPS43333-Q1 eq82_lvsa82.gif

Choose a lower value of 4 µH in order to ensure a high RHP-zero frequency while making a compromise that expects a high current ripple. This inductor selection also makes the boost converter operate in discontinuous conduction mode, where it is easier to compensate.

The inductor saturation current must be higher than the peak inductor current and some percentage (typically 20% to 30%) higher than the maximum current-limit value set by the external resistive sensing element.

Determine the saturation rating at the minimum input voltage, maximum output current, and maximum core temperature for the application.

8.2.1.2.4 Inductor Ripple Current, IRIPPLE

Based on an inductor value of 4 µH, the ripple current is approximately 3.1 A.

8.2.1.2.5 Peak Current in Low-Side FET, IPEAK

Equation 8. TPS43333-Q1 eq83_lvsa82.gif

Based on this peak current value in Equation 8, calculate the external current-sense resistor RSENSE with Equation 9.

Equation 9. TPS43333-Q1 eq84_lvsa82.gif

Select 20 mΩ, allowing for tolerance.

The filter component values RIFLT and CIFLT for current sense are 1.5 kΩ and 1 nF, respectively, which allows for good noise immunity.

8.2.1.2.6 Right Half-Plane Zero RHP Frequency, fRHP

Equation 10. TPS43333-Q1 eq85_lvsa82.gif

8.2.1.2.7 Output Capacitor, CO

To ensure stability, choose output capacitor CO such that Equation 11.

Equation 11. TPS43333-Q1 eq86_lvsa82.gif

Select CO = 680 µF.

This capacitor is usually aluminum electrolytic with ESR in the tens of milliohms. ESR in this range is good for loop stability, because it provides a phase boost. The output filter components, L and C, create a double pole (180-degree phase shift) at a frequency fLC and the ESR of the output capacitor RESR creates a zero for the modulator at frequency fESR. These frequencies can be determined by Equation 12 (potentially use parallel configuration of smaller values to achieve this RESR or recalculate with correct value).

Equation 12. TPS43333-Q1 eq87_lvsa82.gif

This satisfies fLC ≤ 0.1 fRHP.

Potentially use a parallel configuration of smaller values to achieve this RESR or recalculate with the correct value.

8.2.1.2.8 Bandwidth of Boost Converter, fC

Use the following guidelines to set the frequency poles, zeroes, and crossover values for the trade-off between stability and transient response:

fLC < fESR< fC< fRHP Zero

fC < fRHP Zero / 3

fC < fSW / 6

fLC < fC / 3

8.2.1.2.9 Output Ripple Voltage Due to Load Transients, ∆VO

Assume a bandwidth of fC = 10 kHz in Equation 13.

Equation 13. TPS43333-Q1 eq28_lvsa82.gif

Because the boost converter is active only during brief events such as a cranking pulse, and the buck converters are high-voltage tolerant, a higher excursion on the boost output may be tolerable in some cases. In such cases, one can choose smaller components for the boost output.

8.2.1.2.10 Selection of Components for Type II Compensation

The required loop gain for unity-gain bandwidth (UGB) is Equation 14.

Equation 14. TPS43333-Q1 eq88_lvsa82.gif

The boost-converter error amplifier (OTA) has a Gm that is proportional to the VBAT voltage. This allows a constant loop response across the input-voltage range and makes it easier to compensate by removing the dependency on VBAT with Equation 15.

Equation 15. TPS43333-Q1 eq89_lvsa82.gif

8.2.1.2.11 Input Capacitor, CIN

The input ripple required is lower than 50 mV in Equation 16.

Equation 16. TPS43333-Q1 eq90_lvsa82.gif

Therefore, TI recommends 220 µF with 10-mΩ ESR or a parallel configuration of several capacitors to achieve such ESR-levels.

8.2.1.2.12 Output Schottky Diode D1 Selection

Maximizing efficiency requires a Schottky diode with low forward-conducting voltage VF over temperature and fast switching characteristics. The reverse breakdown voltage should be higher than the maximum input voltage, and the component should have low reverse leakage current. Additionally, the peak forward current should be higher than the peak inductor current. The power dissipation in the Schottky diode is given by Equation 17.

Equation 17. TPS43333-Q1 eq91_lvsa82.gif

8.2.1.2.13 Low-Side MOSFET (BOT_SW3)

Equation 18. TPS43333-Q1 eq02_lvsa82.gif

The times tr and tf denote the rising and falling times of the switching node in Equation 18 and relate to the gate-driver strength of the TPS43333-Q1 and gate Miller capacitance of the MOSFET. The first term denotes the conduction losses, which the low on-resistance of the MOSFET minimizes. The second term denotes the transition losses which arise due to the full application of the input voltage across the drain-source of the MOSFET as it turns on or off. Transition losses are higher at high output currents and low input voltages (due to the large input peak current) and when the switching time is low.

NOTE

The on-resistance, rDS(on), has a positive temperature coefficient, which produces the
(TC = d × ΔT) term that signifies the temperature dependence. (Temperature coefficient d is available as a normalized value from MOSFET data sheets and can have an assumed starting value of 0.005 / °C).

8.2.1.2.14 BuckA Component Selection

8.2.1.2.14.1 Minimum On-Time, tON min

Equation 19. TPS43333-Q1 eq13_lvsa82.gif

tON min is higher than the minimum duty cycle specified (100 ns typical) in Equation 19. Hence, the minimum duty cycle is achievable at this frequency.

8.2.1.2.14.2 Current-Sense Resistor RSENSE

Based on the typical characteristics for the VSENSE limit with VIN versus duty cycle, the sense limit is approximately 65 mV (at VIN = 12 V and duty cycle of 5 V / 12 V = 0.416). Allowing for tolerances and ripple currents, choose a VSENSE maximum of 50 mV with Equation 20.

Equation 20. TPS43333-Q1 eq14_lvsa82.gif

Select 15 mΩ.

8.2.1.2.15 Inductor Selection L

As explained in the description of the buck controllers, for optimal slope compensation and loop response, choose the inductor such that Equation 21.

Equation 21. TPS43333-Q1 eq03_lvsa82.gif

where

  • KFLR = coil-selection constant = 200

Choose a standard value of 8.2 µH. For the buck converter, choose the inductor saturation currents and core to sustain the maximum currents.

8.2.1.2.16 Inductor Ripple Current IRIPPLE

At the nominal input voltage of 12 V, this inductor value causes a ripple current of 30% of IO max ≈ 1 A.

8.2.1.2.17 Output Capacitor COUT

Select an output capacitance COUT of 100 µF with low ESR in the range of 10 mΩ, giving ∆VO(Ripple) ≈ 15 mV and a ∆V drop of ≈ 180 mV during a load step, which does not trigger the power-good comparator and is within the required limits.

Equation 22. TPS43333-Q1 eq93_SLVSC16.gif
Equation 23. TPS43333-Q1 eq94_SLVSC16.gif
Equation 24. TPS43333-Q1 eq95_SLVSC16.gif

8.2.1.2.18 Bandwidth of Buck Converter fC

Use the following guidelines to set frequency poles, zeroes, and crossover values for the tradeoff between stability and transient response.

  • Crossover frequency fC between fSW / 6 and fSW / 10. Assume fC = 50 kHz.
  • Select the zero fz ≈ fC / 10
  • Make the second pole fP2 ≈ fSW / 2

8.2.1.2.19 Selection of Components for Type II Compensation

TPS43333-Q1 appinfo_selcomptyp2a_lvsa82.gif Figure 26. Buck Compensation Components
Equation 25. TPS43333-Q1 eq04_lvsa82.gif

where

  • VO = 5 V
  • CO = 100 µF
  • GmBUCK = 1 mS
  • VREF = 0.8 V
  • KCFB = 0.125 / RSENSE = 8.33 S (0.125 is an internal constant)

Use the standard value of R3 = 24 kΩ in Equation 26.

Equation 26. TPS43333-Q1 eq05_lvsa82.gif

Use the standard value of 1.5 nF in Equation 27.

Equation 27. TPS43333-Q1 eq06_lvsa82.gif

The resulting bandwidth of buck converter fC is Equation 28.

Equation 28. TPS43333-Q1 eq08_lvsa82.gif

fC is close to the target bandwidth of 50 kHz.

The resulting zero frequency fZ1 is Equation 29.

Equation 29. TPS43333-Q1 eq07_lvsa82.gif

fZ1 is close to the fC / 10 guideline of 5 kHz.

The second pole frequency fP2 is Equation 30.

Equation 30. TPS43333-Q1 eq09_lvsa82.gif

fP2 is close to the fSW / 2 guideline of 200 kHz. Hence, the design satisfies all requirements for a good loop.

8.2.1.2.20 Resistor Divider Selection for Setting VOUTA Voltage

Equation 31. TPS43333-Q1 eq10_lvsa82.gif

Choose the divider current through R1 and R2 to be 50 µA. Then use Equation 32 and Equation 33.

Equation 32. TPS43333-Q1 eq11_slvsb48.gif
Equation 33. TPS43333-Q1 eq12_lvsa82.gif

Therefore, R2 = 16 kΩ and R1 = 84 kΩ.

8.2.1.2.21 BuckB Component Selection

Using the same method as for VBUCKA produces the following parameters and components in Equation 34.

Equation 34. TPS43333-Q1 eq13_lvsa82.gif

This is higher than the minimum duty cycle specified (100 ns typical) in Equation 35.

Equation 35. TPS43333-Q1 eq15_lvsa82.gif

∆Iripple current ≈ 0.4 A (approximately 20% of IO max)

Select an output capacitance CO of 100 µF with low ESR in the range of 10 mΩ. This gives ∆VO (ripple) ≈ 7.5 mV and ∆V drop of ≈ 120 mV during a load step.

Assume fC = 50 kHz in Equation 36.

Equation 36. TPS43333-Q1 eq16_lvsa82.gif

Use the standard value of R3 = 30 kΩ in Equation 37 through Equation 39.

Equation 37. TPS43333-Q1 eq17_lvsa82.gif
Equation 38. TPS43333-Q1 eq18_lvsa82.gif
Equation 39. TPS43333-Q1 eq19_lvsa82.gif

fC is close to the target bandwidth of 50 kHz.

The resulting zero frequency fZ1 is Equation 40.

Equation 40. TPS43333-Q1 eq21_lvsa82.gif

fZ1 is close to the fC guideline of 5 kHz.

The second pole frequency fP2 is Equation 41.

Equation 41. TPS43333-Q1 eq22_lvsa82.gif

fP2 is close to the fSW / 2 guideline of 200 kHz.

Hence, the design satisfies all requirements for a good loop.

8.2.1.2.22 Resistor Divider Selection for Setting VO Voltage

Equation 42. TPS43333-Q1 eq23_lvsa82.gif

Choose the divider current through R1 and R2 to be 50 µA in Equation 42. Then use Equation 43 and Equation 44.

Equation 43. TPS43333-Q1 eq24_lvsa82.gif
Equation 44. TPS43333-Q1 eq25_lvsa82.gif

Therefore, R2 = 16 kΩ and R1 = 50 kΩ.

8.2.1.2.23 BuckX High-Side and Low-Side N-Channel MOSFETs

An internal supply, which is 5.8 V typical under normal operating conditions, provides the gate-drive supply for these MOSFETs. The output is a totem pole, allowing full-voltage drive of VREG to the gate with peak output current of 1.2 A. The reference for the high-side MOSFET is a floating node at the phase terminal (PHx), and the reference for the low-side MOSFET is the power-ground (PGNDx) terminal. For a particular application, select these MOSFETs with consideration for the following parameters: rDS(on), gate charge Qg, drain-to-source breakdown voltage BVDSS, maximum dc current IDC(max), and thermal resistance for the package.

The times tr and tf denote the rising and falling times of the switching node and have a relationship to the gate-driver strength of the TPS43333-Q1 and to the gate Miller capacitance of the MOSFET. The first term denotes the conduction losses, which are minimimal when the on-resistance of the MOSFET is low. The second term denotes the transition losses, which arise due to the full application of the input voltage across the drain-source of the MOSFET as it turns on or off. Transition losses are lower at low currents and when the switching time is low as seen in Equation 45 and Equation 46.

Equation 45. TPS43333-Q1 eq26_lvsa82.gif
Equation 46. TPS43333-Q1 eq27_lvsa82.gif

In addition, during the dead time td when both the MOSFETs are off, the body diode of the low-side MOSFET conducts, increasing the losses. The second term in the preceding equation denotes this. Using external Schottky diodes in parallel with the low-side MOSFETs of the buck converters helps to reduce this loss.

NOTE

rDS(on) has a positive temperature coefficient, and TC term for rDS(on) accounts for that fact. TC = d × ΔT[°C]. The temperature coefficient d is available as a normalized value from MOSFET data sheets and can have an assumed starting value of 0.005 / ºC.

8.2.1.3 Application Curves

TPS43333-Q1 Boost_Cranking_Pulse_Response.gif Figure 27. Boost Cranking Pulse Response
with 2 A Load on Boost
TPS43333-Q1 BuckB_3_3V_400mA_1_8A_400mA.gif Figure 29. Buck Load-Step Response:
BuckB 3.3 V, 400 mA to 1.8 A to 400 mA
TPS43333-Q1 BuckA_5V_200mA_2_4A_200mA.gif Figure 28. Buck Load-Step Response:
BuckA 5 V, 200 mA to 2.4 A to 200 mA

8.2.2 Application Example 2

Figure 30 shows an application with lower output voltage and reduced load on BuckB (2.5 V, 1 A).

TPS43333-Q1 appinfo_schematic2_v2_lvsB48.gif Figure 30. Simplified Application Schematic, Example 2

8.2.2.1 Design Requirements

For this design example, use the parameters listed in Table 7 as the input parameters.

Table 7. Design Parameters

PARAMETER VBUCK A VBUCK B BOOST
Input voltage VIN = 5 V to 30 V
12 V (typical)
VIN = 6 V to 30 V
12 V (typical)
VBAT = 5 V (cranking pulse input) to 30 V
Output voltage, VO 5 V 2.5 V 10 V
Maximum output current, IO 3 A 1 A 2 A
Load-step output tolerance, ∆VO ±0.2 V ±0.12 V ±0.5 V
Current output load step, ∆IO 0.1 A to 3 A 0.1 A to 1 A 0.1 A to 2 A
Converter switching frequency, fSW 400 kHz 400 kHz 200 kHz

8.2.2.2 Detailed Design Procedure

8.2.2.2.1 Component Proposals

Table 8 lists the component proposals for this application example.

Table 8. Application Example 2 – Component Proposals

NAME COMPONENT PROPOSAL VALUE
L1 MSS1278T-392NL (Coilcraft) 3.9 µH
L2 MSS1278T-822ML (Coilcraft) 8.2 µH
L3 MSS1278T-223ML (Coilcraft) 22 µH
D1 SK103 (Micro Commercial Components)
TOP_SW3 IRF7416 (International Rectifier)
TOP_SW1, TOP_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW1, BOT_SW2 Si4840DY-T1-E3 (Vishay)
BOT_SW3 IRFR3504ZTRPBF (International Rectifier)
COUT1 EEVFK1V471Q (Panasonic) 470 µF
COUTA ECASD91A157M010K00 (Murata) 150 µF
COUTB ECASD40J107M015K00 (Murata) 100 µF
CIN EEEFK1V331P (Panasonic) 330 µF