ZHCSQC2A November   2015  – July 2022 TPS51216-EP

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDDQ Switch Mode Power Supply Control
      2. 8.3.2 VREF and REFIN, VDDQ Output Voltage
      3. 8.3.3 Soft-Start and Powergood
      4. 8.3.4 Power State Control
      5. 8.3.5 Discharge Control
      6. 8.3.6 VTT Overcurrent Protection
      7. 8.3.7 V5IN Undervoltage Lockout (UVLO) Protection
      8. 8.3.8 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 MODE Pin Configuration
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 D-CAP Mode
      2. 9.1.2 Light-Load Operation
      3. 9.1.3 VTT and VTTREF
      4. 9.1.4 VDDQ Overvoltage and Undervoltage Protection
      5. 9.1.5 VDDQ Overcurrent Protection
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 List of Materials
        2. 9.2.2.2 External Components Selection
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 接收文档更新通知
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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Electrical Characteristics

TJ = –55°C to 125°C, VV5IN = 5 V, VLDOIN is connected to VDDQ output, VMODE = 0 V, VS3 = VS5 = 5 V (unless otherwise noted)
PARAMETERTEST CONDITIONMINTYPMAXUNIT
SUPPLY CURRENT
IV5IN(S0)V5IN supply current, in S0TJ = 25°C, No load, VS3 = VS5 = 5 V590μA
IV5IN(S3)V5IN supply current, in S3TJ = 25°C, No load, VS3 = 0 V, VS5 = 5 V500μA
IV5INSDNV5IN shutdown currentTJ = 25°C, No load, VS3 = VS5 = 0 V1μA
IVLDOIN(S0)VLDOIN supply current, in S0TJ = 25°C, No load, VS3 = VS5 = 5 V5μA
IVLDOIN(S3)VLDOIN supply current, in S3TJ = 25°C, No load, VS3 = 0 V, VS5 = 5 V5μA
IVLDOINSDNVLDOIN shutdown currentTJ = 25°C, No load, VS3 = VS5 = 0 V5μA
VREF OUTPUT
VVREFOutput voltageIVREF = 30 μA, TJ = 25°C1.8000V
0 μA ≤ IVREF <300 μA, TJ = –55°C to 125°C1.78201.8180
IVREFOCLCurrent limitVVREF = 1.7 V0.40.8mA
VTTREF OUTPUT
VVTTREFOutput voltageVVDDQSNS/2V
VVTTREFOutput voltage tolerance to VVDDQ|IVTTREF| <100 μA, 1.2 V ≤ VVDDQSNS ≤ 1.8 V49.2%50.8%
|IVTTREF| <10 mA, 1.2 V ≤ VVDDQSNS ≤ 1.8 V49%51%
IVTTREFOCLSRCSource current limitVVDDQSNS = 1.8 V, VVTTREF= 0 V1018mA
IVTTREFOCLSNKSink current limitVVDDQSNS = 1.8 V, VVTTREF = 1.8 V1017mA
IVTTREFDISVTTREF discharge currentTJ = 25°C, VS3 = VS5 = 0 V, VVTTREF = 0.5 V0.81.3mA
VTT OUTPUT
VVTTOutput voltageVVTTREFV
VVTTTOLOutput voltage tolerance to VTTREF|IVTT| ≤ 10 mA, 1.2 V ≤ VVDDQSNS ≤ 1.8 V, IVTTREF = 0 A–2020mV
|IVTT| ≤ 1 A, 1.2 ≤ VVDDQSNS ≤ 1.8 V, IVTTREF = 0 A–3030
|IVTT| ≤ 2 A, 1.4 V ≤ VVDDQSNS ≤ 1.8 V, IVTTREF = 0 A–4040
|IVTT| ≤ 1.5 A, 1.2 V ≤ VVDDQSNS ≤ 1.4 V, IVTTREF = 0 A–4040
IVTTOCLSRCSource current limitVVDDQSNS = 1.8 V, VVTT = VVTTSNS = 0.7 V,
IVTTREF = 0 A
23A
IVTTOCLSNKSink current limitVVDDQSNS = 1.8V, VVTT = VVTTSNS = 1.1 V, IVTTREF = 0 A23
IVTTLKLeakage currentTJ = 25°C , VS3 = 0 V, VS5 = 5 V, VVTT = VVTTREF5μA
IVTTSNSBIASVTTSNS input bias currentVS3 = 5 V, VS5 = 5 V, VVTTSNS = VVTTREF–0.50.00.5
IVTTSNSLKVTTSNS leakage currentVS3 = 0 V, VS5 = 5 V, VVTTSNS = VVTTREF–101
IVTTDISVTT Discharge currentTJ = 25°C, VS3 = VS5 = 0 V, VVDDQSNS = 1.8 V,
VVTT = 0.5 V, IVTTREF = 0 A
7.8mA
VDDQ OUTPUT
VVDDQSNSVDDQ sense voltageVREFIN
VVDDQSNSTOLVDDQSNS regulation voltage tolerance to REFINTJ = 25°C–33mV
IVDDQSNSVDDQSNS input currentVVDDQSNS = 1.8 V39μA
IREFINREFIN input currentVREFIN = 1.8 V–0.10.00.1μA
IVDDQDISVDDQ discharge currentVS3 = VS5 = 0 V, VVDDQSNS = 0.5 V, MODE pin pulled down to GND through 47 kΩ (Non-tracking)12mA
IVLDOINDISVLDOIN discharge currentVS3 = VS5 = 0 V, VVDDQSNS = 0.5 V, MODE pin pulled down to GND through 100 kΩ (Non-tracking)1.2A
SWITCH MODE POWER SUPPLY (SMPS) FREQUENCY
ƒSWVDDQ switching frequencyVIN = 5 V, VVDDQSNS = 1.8 V, RMODE = 100 kΩ300kHz
VIN = 5 V, VVDDQSNS = 1.8 V, RMODE = 200 kΩ400
tON(min)Minimum on timeDRVH rising to falling160ns
tOFF(min)Minimum off timeDRVH falling to rising200320450
VDDQ MOSFET DRIVER
RDRVHDRVH resistanceSource, IDRVH = –50 mA1.63.0Ω
Sink, IDRVH = 50 mA0.61.5
RDRVLDRVL resistanceSource, IDRVL = –50 mA0.92.0
Sink, IDRVL = 50 mA0.51.2
tDEADDead timeDRVH-off to DRVL-on10ns
DRVL-off to DRVH-on20
INTERNAL BOOT STRAP SW
VFBSTForward voltageVV5IN-VBST, TJ = 25°C, IF = 10 mA0.10.2V
IVBSTLKVBST leakage currentTJ = 25°C, VVBST = 33 V, VSW = 28 V0.011.5μA
LOGIC THRESHOLD
IMODEMODE source current141516μA
VTHMODEMODE threshold voltageMODE 0580600620mV
MODE 1829854879
MODE 2120212321262
MODE 3176018001840
VILS3/S5 low-level voltage0.5V
VIHS3/S5 high-level voltage1.8
VIHYSTS3/S5 hysteresis voltage0.25
VILKS3/S5 input leak current–101μA
SOFT START
tSSVDDQ soft-start timeInternal soft-start time, CVREF = 0.1 μF,
S5 rising to VVDDQSNS > 0.99 × VREFIN
1.1ms
PGOOD COMPARATOR
VTHPGVDDQ PGOOD thresholdPGOOD in from higher106%108%110%
PGOOD in from lower90%92%94%
PGOOD out to higher114%116%118%
PGOOD out to lower82%84%86%
IPGPGOOD sink currentVPGOOD = 0.5 V35.9mA
tPGDLYPGOOD delay timeDelay for PGOOD in0.811.2ms
Delay for PGOOD out, with 100 mV over drive330ns
tPGSSDLYPGOOD start-up delayCVREF = 0.1 μF, S5 rising to PGOOD rising2.5ms
PROTECTIONS
ITRIPTRIP source currentTJ = 25°C, VTRIP = 0.4 V91011μA
TCITRIPTRIP source current temperature coefficient14700ppm/°C
VTRIPVTRIP voltage range0.23V
VOCLCurrent limit thresholdVTRIP = 3.0 V360375390mV
VTRIP = 1.6 V190200210
VTRIP = 0.2 V202530
VOCLNNegative current limit thresholdVTRIP = 3.0 V–390–375–360mV
VTRIP = 1.6 V–210–200–190
VTRIP = 0.2 V–30–25–20
VZCZero cross detection offset0mV
VUVLOV5IN UVLO threshold voltageWake-up4.24.44.5V
Shutdown3.73.94.1
VOVPVDDQ OVP threshold voltageOVP detect voltage118%120%122%
tOVPDLYVDDQ OVP propagation delayWith 100 mV over drive430ns
VUVPVDDQ UVP threshold voltageUVP detect voltage66%68%70%
tUVPDLYVDDQ UVP delay1ms
tUVPENDLYVDDQ UVP enable delay1.2ms
VOOBOOB threshold voltage108%
THERMAL SHUTDOWN
TSDNThermal shutdown thresholdShutdown temperature1140°C
Hysteresis110
  1. Ensured by design. Not production tested.
GUID-B82422F9-94A2-4178-A678-DA576B868987-low.gif
See data sheet for absolute maximum and minimum recommended operating conditions.
Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect life).
Enhanced plastic product disclaimer applies.
Figure 7-1 TPS51216-EP Derating Chart