ZHCSQP5 august 2023 TPS51386
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| INPUT SUPPLY (VIN) | ||||||
| VIN | Input voltage range | VIN | 4.5 | 24 | V | |
| IVIN | VIN Supply Current (Quiescent) | No load, VEN = 3.3 V, non-switching | 84 | µA | ||
| IINSDN | VIN Shutdown Current | No load, VEN= 0 V, PG open | 3.7 | µA | ||
| UVLO | ||||||
| VVCC UVLO_R | VCC Under-Voltage Lockout | VVCC rising | 4.2 | 4.42 | V | |
| VVCC UVLO_F | VCC Under-Voltage Lockout | VVCC falling | 3.65 | 3.85 | V | |
| VVCC UVLO_H | VCC Under-Voltage Lockout | Hysteresis VCC voltage | 350 | 650 | mV | |
| ENABLE (EN), MODE | ||||||
| VEN_R | EN Threshold High-level | VEN rising | 1.31 | 1.5 | V | |
| VEN_F | EN Threshold Low-level | VEN falling | 1.0 | 1.13 | V | |
| VEN_H | EN Threshold Low-level | Hysteresis | 180 | mV | ||
| IEN | EN Pull down Current | VEN = 0.8 V | 1.3 | 2.3 | uA | |
| VIL;MODE | Low-Level Input Voltage at MODE Pin | 0.4 | V | |||
| VIH;MODE | High-Level Input Voltage at MODE Pin | 0.8 | V | |||
| IMODE | MODE Pull down Current | VMODE = 0.8 V | 1.3 | 2.3 | 3.5 | uA |
| VCC | ||||||
| VVCC | VCC Output Voltage | VVIN > 5.2 V, IVCC ≤ 1 mA | 4.85 | 5 | 5.15 | V |
| FEEDBACK VOLTAGE (FB) | ||||||
| VFB_REG | Feedback regulation voltage | TJ= 25 °C | 594 | 600 | 606 | mV |
| Feedback regulation voltage | –40 °C ≤ TJ ≤ 125°C | 591 | 600 | 609 | mV | |
| DUTY CYCLE and FREQUENCY CONTROL | ||||||
| fSW | Switching frequency | CCM operation | 600 | kHz | ||
| tON(min) | Minimum ON pulse width(1) | TJ = 25°C | 65 | 75 | ns | |
| tOFF(min) | Minimum OFF pulse width(1) | TJ = 25°C | 190 | ns | ||
| OOA FUNCTION | ||||||
| tOOA | OOA operation period | VMODE = VVCC | 30 | 50 | μs | |
| SOFT-START (SS) | ||||||
| tSS | Internal fixed soft start | 0.55 | 1 | 1.35 | ms | |
| ISS | Soft Start Charge Current | 4 | 5 | 6 | μA | |
| POWER SWITCHES (SW) | ||||||
| RDSON(HS) | High-side MOSFET on-resistance | TJ = 25°C | 22 | mΩ | ||
| RDSON(LS) | Low-side MOSFET on-resistance | TJ = 25°C | 11 | mΩ | ||
| CURRENT LIMIT | ||||||
| IOCL | Low-side valley current limit | Valley current limit on LS FET | 9.5 | 11 | 12.5 | A |
| INOCL | Low-side negative current limit | Sinking current limit on LS FET, OOA operation | 3.9 | A | ||
| OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION | ||||||
| VOVP | OVP Trip Threshold | 117 | 120 | 123 | % | |
| tOVPDLY | OVP Prop deglitch | 20 | μs | |||
| tOVPDLY | OVP latch-off Prop deglitch | 256 | μs | |||
| VUVP | UVP Trip Threshold | 55 | 60 | 65 | % | |
| tUVPDLY | UVP Prop deglitch | 256 | μs | |||
| POWER GOOD (PG) | ||||||
| tPGDLY | PG Start-Up delay | PG from low to high | 500 | μs | ||
| tPGDLY | PG delay time when VFB rising (fault) | PG from high to low | 20 | μs | ||
| tPGDLY | PG delay time when VFB falling (fault) | PG from high to low | 28 | μs | ||
| VPGTH | PG Threshold when VFB falling (fault) | VFB falling (fault), percentage of VFB | 79 | 85 | 89 | % |
| VPGTH | PG Threshold when VFB rising (good) | VFB rising (good), percentage of VFB | 86 | 90 | 94 | % |
| VPGTH | PG Threshold when VFB rising (fault) | VFB rising (fault), percentage of VFB | 116 | 120 | 124 | % |
| VPGTH | PG Threshold when VFB falling (good) | VFB falling (good), percentage of VFB | 109 | 115 | 119 | % |
| IPGMAX | PG Sink Current | VPG = 0.5 V | 50 | mA | ||
| IPGLK | PG Leak Current | VPG = 5.5 V | 1 | μA | ||
| OUTPUT DISCHARGE | ||||||
| RDIS | Discharge resistance | TJ = 25 °C, VEN = 0 V | 160 | Ω | ||
| THERMAL SHUTDOWN | ||||||
| TJ(SD) | Thermal shutdown threshold(1) | 165 | °C | |||
| TJ(HYS) | Thermal shutdown hysteresis (1) | 20 | °C | |||