7.3.3 Drivers

TPS53014 contains two high-current resistive MOSFET gate drivers. The low-side driver is a PGND referenced, VREG5 powered driver designed to drive the gate of a high-current, low R_DS(on) N-channel MOSFET whose source is connected to PGND. The high-side driver is a floating SW referenced, VBST powered driver designed to drive the gate of a high-current, low R_DS(on) N-channel MOSFET. To maintain the VBST voltage during the high-side driver ON time, a capacitor is placed from SW to VBST. Each driver draws average current equal to Gate Charge (Q_g @ V_gs = 5V) times Switching frequency (fsw). To prevent cross-conduction, there is a narrow dead-time when both high-side and low-side drivers are OFF between each driver transition. During this time the inductor current is carried by one of the MOSFETs body diodes.