ZHCS625B DECEMBER 2011 – February 2019 TPS53219A
PRODUCTION DATA.
The high-side driver is designed to drive high current, low RDS(on) N-channel MOSFETs. When configured as a floating driver, the bias voltage is delivered from the VDRV pin supply. The average drive current is calculated using Equation 4.
The instantaneous drive current is supplied by the flying capacitor between VBST and SW pins. The drive capability is represented by internal resistance, which is 1.5 Ω for VBST to DRVH and 0.7 Ω for DRVH to SW.
The driving power which needs to be dissipated from TPS53219A package.