ZHCS181G August 2011 – April 2021 TPS53355
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
| PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| VVIN | VIN pin power conversion input voltage | 1.5 | 15 | V | ||
| VVDD | Supply input voltage | 4.5 | 25 | V | ||
| IVIN(leak) | VIN pin leakage current | VEN = 0 V | 1 | µA | ||
| IVDD | VDD supply current | TA = 25°C, No load, VEN = 5 V, VVFB = 0.630 V | 420 | 590 | µA | |
| IVDDSDN | VDD shutdown current | TA = 25°C, No load, VEN = 0 V | 10 | µA | ||
| INTERNAL REFERENCE VOLTAGE | ||||||
| VVFB | VFB regulation voltage | CCM condition(1) | 0.6 | V | ||
| VVFB | VFB regulation voltage | TA = 25°C | 0.597 | 0.6 | 0.603 | V |
| 0°C ≤ TA ≤ 85°C | 0.5952 | 0.6 | 0.6048 | |||
| –40°C ≤ TA ≤ 85°C | 0.594 | 0.6 | 0.606 | |||
| IVFB | VFB input current | VVFB = 0.630 V, TA = 25°C | 0.01 | 0.20 | µA | |
| LDO OUTPUT | ||||||
| VVREG | LDO output voltage | 0 mA ≤ IVREG ≤ 30 mA | 4.77 | 5 | 5.36 | V |
| IVREG | LDO output current(1) | Maximum current allowed from LDO | 30 | mA | ||
| VDO | Low drop out voltage | VVDD = 4.5 V, IVREG = 30 mA | 230 | mV | ||
| BOOT-STRAP SWITCH | ||||||
| VFBST | Forward voltage | VVREG-VBST, IF = 10 mA, TA = 25°C | 0.1 | 0.2 | V | |
| IVBSTLK | VBST leakage current | VVBST = 23 V, VSW = 17 V, TA = 25°C | 0.01 | 1.50 | µA | |
| DUTY AND FREQUENCY CONTROL | ||||||
| tOFF(min) | Minimum off time | TA = 25°C | 150 | 260 | 400 | ns |
| tON(min) | Minimum on time | VIN = 17 V, VOUT = 0.6 V, RRF = 39 kΩ, TA = 25 °C(1) | 35 | ns | ||
| SOFT START | ||||||
| tSS | Internal soft-start time from VOUT = 0 V to 95% of VOUT | RMODE = 39 kΩ | 0.7 | ms | ||
| RMODE = 100 kΩ | 1.4 | |||||
| RMODE = 200 kΩ | 2.8 | |||||
| RMODE = 470 kΩ | 5.6 | |||||
| INTERNAL MOSFETS | ||||||
| RDS(on)H | High-side MOSFET on-resistance | TA = 25°C | 5 | mΩ | ||
| RDS(on)L | Low-side MOSFET on-resistance | TA = 25°C | 2 | mΩ | ||
| POWER GOOD | ||||||
| VTHPG | PG threshold | PG in from lower | 92.5% | 95.0% | 98.5% | |
| PG in from higher | 107.5% | 110.0% | 112.5% | |||
| PG hysteresis | 2.5% | 5.0% | 7.5% | |||
| RPG | PG transistor on-resistance | 15 | 30 | 55 | Ω | |
| tPGDEL | PG delay | Delay for PG in | 0.8 | 1 | 1.2 | ms |
| LOGIC THRESHOLD AND SETTING CONDITIONS | ||||||
| VEN | EN Voltage | Enable | 1.8 | V | ||
| Disable | 0.6 | |||||
| IEN | EN Input current | VEN = 5 V | 1.0 | µA | ||
| fSW | Switching frequency | RRF = 0 Ω to GND, TA = 25°C(2) | 200 | 250 | 300 | kHz |
| RRF = 187 kΩ to GND, TA = 25°C(2) | 250 | 300 | 350 | |||
| RRF = 619 kΩ, to GND, TA = 25°C(2) | 350 | 400 | 450 | |||
| RRF = Open, TA= 25°C(2) | 450 | 500 | 550 | |||
| RRF = 866 kΩ to VREG, TA = 25°C(2) | 580 | 650 | 720 | |||
| RRF = 309 kΩ to VREG, TA = 25°C(2) | 670 | 750 | 820 | |||
| RRF = 124 kΩ to VREG, TA = 25°C(2) | 770 | 850 | 930 | |||
| RRF = 0 Ω to VREG, TA = 25°C(2) | 880 | 970 | 1070 | |||
| PROTECTION: CURRENT SENSE | ||||||
| ITRIP | TRIP source current | VTRIP = 1 V, TA = 25°C | 9.4 | 10.0 | 10.6 | µA |
| TCITRIP | TRIP current temperature coefficient | On the basis of 25°C(1) | 4700 | ppm/°C | ||
| VTRIP | Current limit threshold setting range | VTRIP-GND | 0.4 | 2.4 | V | |
| VOCL | Current limit threshold | VTRIP = 2.4 V | 68.5 | 75.0 | 81.5 | mV |
| VTRIP = 0.4 V | 7.5 | 12.5 | 17.5 | |||
| VOCLN | Negative current limit threshold | VTRIP = 2.4 V | -315 | -300 | -285 | mV |
| VTRIP = 0.4 V | -58 | -50 | -42 | |||
| VAZCADJ | Auto zero cross adjustable range | Positive | 3 | 15 | mV | |
| Negative | –15 | –3 | ||||
| PROTECTION: UVP and OVP | ||||||
| VOVP | OVP trip threshold | OVP detect | 115% | 120% | 125% | |
| tOVPDEL | OVP propagation delay | VFB delay with 50-mV overdrive | 1 | µs | ||
| VUVP | Output UVP trip threshold | UVP detect | 65% | 70% | 75% | |
| tUVPDEL | Output UVP propagation delay | 0.8 | 1.0 | 1.2 | ms | |
| tUVPEN | Output UVP enable delay | From enable to UVP workable | 1.8 | 2.6 | 3.2 | ms |
| UVLO | ||||||
| VUVVREG | VREG UVLO threshold | Wake up | 4.00 | 4.20 | 4.33 | V |
| Hysteresis | 0.25 | |||||
| THERMAL SHUTDOWN | ||||||
| TSDN | Thermal shutdown threshold | Shutdown temperature(1) | 145 | °C | ||
| Hysteresis(1) | 10 | |||||