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SLUS851D October 2008 – October 2014 TPS54231

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

D|8
- MSOI002K

散热焊盘机械数据 (封装 | 引脚)

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7 Specifications

7.1 Absolute Maximum Ratings⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Input voltage	VIN	–0.3	30	V
	EN	–0.3	6
	BOOT		38
	VSENSE	–0.3	3
	COMP	–0.3	3
	SS	–0.3	3
Output voltage	BOOT-PH		8	V
	PH	–0.6	30
	PH (10 ns transient from ground to negative peak)		–5
Source current	EN		100	μA
	BOOT		100	mA
	VSENSE		10	μA
	PH		6	A
Sink current	VIN		6	A
	COMP		100	μA
	SS		200	μA
Operating junction temperature, T_J		–40	150	°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature range		–65	150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	–2	2	kV
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	–500	500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
	Operating Input Voltage on (VIN pin)	3.5	28	V
T_J	Operating junction temperature	–40	150	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		D	UNIT
THERMAL METRIC⁽¹⁾		8 PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	116.3	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	53.7
R_θJB	Junction-to-board thermal resistance	57.1
ψ_JT	Junction-to-top characterization parameter	12.9
ψ_JB	Junction-to-board characterization parameter	56.5

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

T_J = –40°C to 150°C, VIN = 3.5 to 28 V (unless otherwise noted)

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN PIN)
	Internal undervoltage lockout threshold	Rising and falling			3.5	V
	Shutdown supply current	EN = 0V, VIN = 12V, –40°C to 85°C		1	4	μA
	Operating – non switching supply current	VSENSE = 0.85 V		75	110	μA
ENABLE AND UVLO (EN PIN)
	Enable threshold	Rising and falling		1.25	1.35	V
	Input current	Enable threshold – 50 mV		-1		μA
	Input current	Enable threshold + 50 mV		-4		μA
VOLTAGE REFERENCE
	Voltage reference		0.772	0.8	0.828	V
HIGH-SIDE MOSFET
	On resistance	BOOT-PH = 3 V, VIN = 3.5 V		115	200	mΩ
	On resistance	BOOT-PH = 6 V, VIN = 12 V		80	150	mΩ
ERROR AMPLIFIER
	Error amplifier transconductance (gm)	–2 μA < I_(COMP) < 2 μA, V_(COMP) = 1 V		92		μmhos
	Error amplifier DC gain⁽¹⁾	VSENSE = 0.8 V		800		V/V
	Error amplifier unity gain bandwidth⁽¹⁾	5 pF capacitance from COMP to GND pins		2.7		MHz
	Error amplifier source/sink current	V_(COMP)= 1 V, 100-mV overdrive		±7		μA
	Switch current to COMP transconductance	VIN = 12 V		9		A/V
PULSE SKIPPING ECO-MODE
	Pulse skipping Eco-mode™ switch current threshold			100		mA
CURRENT LIMIT
	Current limit threshold	VIN = 12 V	2.3	3.5	5.3	A
THERMAL SHUTDOWN
	Thermal Shutdown			165		°C
SLOW START (SS PIN)
	Charge current	V_(SS) = 0.4 V		2		μA
	SS to VSENSE matching	V_(SS) = 0.4 V		10		mV

(1) Specified by design.

7.6 Switching Characteristics

T_J = –40°C to 150°C, VIN = 3.5 to 28 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SWITCHING FREQUENCY
	TPS54231 device switching frequency	VIN = 12 V	400	570	740	kHz
	Minimum controllable on time	VIN = 12 V, 25°C		105	130	ns
	Maximum controllable duty ratio⁽¹⁾	BOOT-PH = 6 V	90%	93%