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ZHCSG03A December 2016 – January 2017 TPS54260-EP

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DGQ|10
- MPDS043F
DRC|10
- MPDS117L

散热焊盘机械数据 (封装 | 引脚)

DGQ|10
- PPTD325B
DRC|10
- QFND013N

订购信息

zhcsg03a_oa

6 Specifications

6.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted).⁽¹⁾

			MIN	MAX	UNIT
Input voltage	VIN		–0.3	65	V
	EN⁽²⁾		–0.3	5
	VSENSE		–0.3	3
	COMP		–0.3	3
	PWRGD		–0.3	6
	SS/TR		–0.3	3
	RT/CLK		–0.3	3.6
Output voltage	BOOT-PH		–0.3	8	V
	PH		–0.6	65
		200 ns	–1	65
		30 ns	–2	65
		Maximum dc voltage, T_J= –40°C		–0.85
Voltage difference	PAD to GND			±200	mV
Source current	EN			100	μA
	BOOT			100	mA
	VSENSE			10	μA
	PH		Current limit
	RT/CLK			100	μA
Sink current	VIN		Current limit
	COMP			100	μA
	PWRGD			10	mA
	SS/TR			200	μA
Operating junction temperature			–55	150	°C
Storage temperature, T_stg			–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) See Enable and Adjusting Undervoltage Lockout (UVLO) for details.

6.2 ESD Ratings

				VALUE		UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾		±2000		V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾		±500		V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
T_J	Operating junction temperature	–55		150	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾⁽²⁾			TPS54260-EP		UNIT
			DRC (VSON)	DGQ (HVSSOP)
			10 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	Standard board	40	62.5	°C/W
R_θJA	Junction-to-ambient thermal resistance	Custom board⁽³⁾	—	57	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance		65	83	°C/W
R_θJB	Junction-to-board thermal resistance		8	28	°C/W
ψ_JT	Junction-to-top characterization parameter		0.6	1.7	°C/W
ψ_JB	Junction-to-board characterization parameter		7.5	20.1	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance		7.8	21	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

(2) Power rating at a specific ambient temperature T_A should be determined with a junction temperature of 150°C. This is the point where distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information.

(3) Test boards conditions:

3 in × 3 in, 2 layers, thickness: 0.062 in.
2-oz copper traces located on the top of the PCB.
2-oz copper ground plane, bottom layer.
6-thermal vias (13 mil) located under the device package.

6.5 Electrical Characteristics

T_J = –55 to 150°C, VIN = 3.5 to 60 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN PIN)
	Operating input voltage		3.5		60	V
	Internal undervoltage lockout threshold	No voltage hysteresis, rising and falling		2.5		V
	Shutdown supply current	EN = 0 V, 3.5 V ≤ VIN ≤ 60 V		1.3	10	μA
	Operating: nonswitching supply current	VSENSE = 0.83 V, VIN = 12 V		138	200	μA
ENABLE AND UVLO (EN PIN)
	Enable threshold voltage	No voltage hysteresis, rising and falling, 25°C	1.14	1.25	1.36	V
	Input current	Enable threshold +50 mV		–3.8		μA
	Input current	Enable threshold –50 mV		–0.9		μA
	Hysteresis current			–2.9		μA
VOLTAGE REFERENCE
	Voltage reference	T_J = 25°C	0.792	0.8	0.808	V
	Voltage reference		0.78	0.8	0.82	V
HIGH-SIDE MOSFET
	on resistance	VIN = 3.5 V, BOOT-PH = 3 V		300		mΩ
	on resistance	VIN = 12 V, BOOT-PH = 6 V		200	410	mΩ
ERROR AMPLIFIER
	Input current			50		nA
	Error amplifier transconductance (g_M)	–2 μA < I_COMP < 2 μA, V_COMP = 1 V		310		μS
	Error amplifier transconductance (g_M) during slow-start	–2 μA < I_COMP < 2 μA, V_COMP = 1 V, V_VSENSE = 0.4 V		70		μS
	Error amplifier dc gain	V_VSENSE = 0.8 V		10,000		V/V
	Error amplifier bandwidth			2700		kHz
	Error amplifier source/sink	V_(COMP) = 1 V, 100 mV overdrive		±27		μA
	COMP to switch current transconductance			10.5		A/V
CURRENT LIMIT
	Current limit threshold	VIN = 12 V	3.5	6.1		A
THERMAL SHUTDOWN
	Thermal shutdown			182		°C
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
	Switching frequency range using RT mode		100		2500	kHz
f_SW	Switching frequency	R_T = 200 kΩ	450	581	720	kHz
	Switching frequency range using CLK mode		300		2200	kHz
	Minimum CLK input pulse width			40		ns
	RT/CLK high threshold			1.9	2.2	V
	RT/CLK low threshold		0.5	0.7		V
	RT/CLK falling edge to PH rising edge delay	Measured at 500 kHz with RT resistor in series		60		ns
	PLL lock in time	Measured at 500 kHz		100		μs
SLOW-START AND TRACKING (SS/TR)
	Charge current	V_SS/TR = 0.4 V		2		μA
	SS/TR-to-VSENSE matching	V_SS/TR = 0.4 V		45		mV
	SS/TR-to-reference crossover	98% nominal		1.15		V
	SS/TR discharge current (overload)	VSENSE = 0 V, V(SS/TR) = 0.4 V		382		μA
	SS/TR discharge voltage	VSENSE = 0 V		54		mV
POWER GOOD (PWRGD PIN)
V_VSENSE	VSENSE threshold	VSENSE falling		92%
		VSENSE rising		94%
		VSENSE rising		109%
		VSENSE falling		107%
	Hysteresis	VSENSE falling		2%
	Output high leakage	VSENSE = VREF, V(PWRGD) = 5.5 V, 25°C		10		nA
	On resistance	I(PWRGD) = 3 mA, VSENSE < 0.79 V		50		Ω
	Minimum VIN for defined output	V(PWRGD) < 0.5 V, II(PWRGD) = 100 μA		0.95	1.9	V

6.6 Typical Characteristics

Figure 1. On Resistance vs Junction Temperature

V_I = 12 V

Figure 3. Switch Current Limit vs Junction Temperature

Figure 5. Switching Frequency vs RT/CLK Resistance High Frequency Range

V_I = 12 V

Figure 7. EA Transconductance During Slow-Start vs Junction Temperature

Figure 9. SS/TR Charge Current vs Junction Temperature

Figure 11. Switching Frequency vs V_SENSE

T_J = 25°C

Figure 13. Shutdown Supply Current vs Input Voltage (V_IN)

T_J = 25°C	V_I(VSENSE) = 0.83 V

Figure 15. VIN Supply Current vs Input Voltage

Figure 17. PWRGD Threshold vs Junction Temperature

T_J = 25°C	V_I = 12 V

Figure 19. SS/TR to V_SENSE Offset vs V_SENSE

Figure 2. Voltage Reference vs Junction Temperature

Figure 4. Switching Frequency vs Junction Temperature

Figure 6. Switching Frequency vs RT/CLK Resistance Low Frequency Range

V_I = 12 V

Figure 8. EA Transconductance vs Junction Temperature

V_I = 12 V

Figure 10. SS/TR Discharge Current vs Junction Temperature

Figure 12. Shutdown Supply Current vs Junction Temperature

V_I = 12 V	V_I(VSENSE) = 0.83 V

Figure 14. VIN Supply Current vs Junction Temperature

Figure 16. PWRGD On Resistance vs Junction Temperature

Figure 18. Boot-PH UVLO vs Junction Temperature

V_I = 12 V	V_(SS/TR) = 0.4 V

Figure 20. SS/TR to V_SENSE Offset vs Temperature