4 Revision History
Changes from Revision A (July 2013) to Revision B (April 2021)
- 添加了以下各节：ESD 等级、特性说明、器件功能模式、强制 CCM 模式、应用和实施、应用信息、设计要求、详细设计流程、应用曲线、电源相关建议、布局、布局示例、器件和文档支持以及机械、封装和可订购信息
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- 更新了整个文档中的表格、图和交叉参考的编号格式Go
- Updated Equation 2
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Changes from Revision May 2012 * () to Revision A (July 2013)
- Deleted VFBTH - TA = 0°C to 85°C, VO = 1.05 V, continuous mode from the Electrical Characteristics. Go
- Changed VFBTH - TA = –40°C to 85°C, VO = 1.05 V, continuous mode From: MIN = 751 MAX = 779 mV To: MIN = 754 MAX = 776 mV in the Electrical CharacteristicsGo
- Changed the Over/Under Voltage Protection section. From: "as the high-side MOSFET driver turns off and the low-side MOSFET turns on" To: "as both the high-side and low-side MOSFET drivers turn off"Go