ZHCS282D July 2011 – August 2016 TPS54527
PRODUCTION DATA.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | VIN, EN | –0.3 | 20 | V |
| VBST | –0.3 | 26 | ||
| VBST (10-ns transient) | –0.3 | 28 | ||
| VBST (vs SW) | –0.3 | 6.5 | ||
| VFB, SS | –0.3 | 6.5 | ||
| SW | –2 | 20 | ||
| SW (10-ns transient) | –3 | 22 | ||
| Output voltage | VREG5 | –0.3 | 6.5 | V |
| GND | –0.3 | 0.3 | ||
| Voltage from GND to thermal pad, Vdiff | –0.2 | 0.2 | V | |
| Operating junction temperature, TJ | –40 | 150 | °C | |
| Storage temperature, Tstg | –55 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VIN | Supply input voltage | 4.5 | 18 | V | |
| Input voltage | VBST | –0.1 | 24 | V | |
| VBST (10 ns transient) | –0.1 | 27 | |||
| VBST(vs SW) | –0.1 | 5.7 | |||
| SS | –0.1 | 5.7 | |||
| EN | –0.1 | 18 | |||
| VFB | –0.1 | 5.5 | |||
| SW | –1.8 | 18 | |||
| SW (10 ns transient) | –3 | 21 | |||
| GND | –0.1 | 0.1 | |||
| VOUT | Output voltage | VREG5 | –0.1 | 5.7 | V |
| IOUT | Output current | IVREG5 | 0 | 5 | mA |
| TA | Operating free-air temperature | –40 | 85 | °C | |
| TJ | Operating junction temperature | –40 | 150 | °C | |
6.4 Thermal Information
| THERMAL METRIC(1) | TPS54527 | UNIT | |
|---|---|---|---|
| DDA (SO PowerPAD) | |||
| 8 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 43.5 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 49.4 | °C/W |
| RθJB | Junction-to-board thermal resistance | 25.6 | °C/W |
| ψJT | Junction-to-top characterization parameter | 7.4 | °C/W |
| ψJB | Junction-to-board characterization parameter | 25.5 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 5.2 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| IVIN | Operating non-switching supply current | VIN current, TA = 25°C, EN = 5 V, VFB = 0.8 V | 900 | 1400 | µA | |
| IVINSDN | Shutdown supply current | VIN current, TA = 25°C, EN = 0 V | 3.6 | 10 | µA | |
| LOGIC THRESHOLD | ||||||
| VENH | EN high-level input voltage | EN | 1.6 | V | ||
| VENL | EN low-level input voltage | EN | 0.6 | V | ||
| VFB VOLTAGE AND DISCHARGE RESISTANCE | ||||||
| VFBTH | VFB threshold voltage | TA = 25°C, VOUT = 1.05 V, continuous mode | 757 | 765 | 773 | mV |
| TA = –40°C to 85°C , VOUT = 1.05 V, continuous mode(1) | 751 | 765 | 779 | mV | ||
| IVFB | VFB input current | VFB = 0.8 V, TA = 25°C | 0 | ±0.15 | µA | |
| VREG5 OUTPUT | ||||||
| VREG5 | VREG5 output voltage | TA = 25°C, 6 V < VIN < 18 V, 0 < IVREG5 < 5 mA | 5.2 | 5.5 | 5.7 | V |
| VLN5 | Line regulation | 6 V < VIN < 18 V, IVREG5 = 5 mA | 25 | mV | ||
| VLD5 | Load regulation | 0 mA < IVREG5 < 5 mA | 100 | mV | ||
| IVREG5 | Output current | VIN = 6 V, VREG5 = 4 V, TA = 25°C | 60 | mA | ||
| MOSFET | ||||||
| RDS(ON)H | High side switch resistance | TA = 25°C, VBST – SW = 5.5 V | 65 | mΩ | ||
| RDS(ON)L | Low side switch resistance | TA = 25°C | 36 | mΩ | ||
| CURRENT LIMIT | ||||||
| Iocl | Current limit | L out = 1.5 µH(1) | 5.6 | 6.4 | 7.9 | A |
| THERMAL SHUTDOWN | ||||||
| TSDN | Thermal shutdown threshold | Shutdown temperature (1) | 165 | °C | ||
| Hysteresis (1) | 35 | |||||
| SOFT START | ||||||
| ISSC | SS charge current | VSS = 1 V | 4.2 | 6 | 7.8 | µA |
| ISSD | SS discharge current | VSS = 0.5 V | 0.1 | 0.2 | mA | |
| UVLO | ||||||
| UVLO | UVLO threshold | Wake up VREG5 voltage | 3.45 | 3.75 | 4.05 | V |
| Hysteresis VREG5 voltage | 0.19 | 0.32 | 0.45 | |||
(1) Not production tested.
6.6 Timing Requirements
| MIN | NOM | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| ON-TIME TIMER CONTROL | ||||||
| tON | ON time | VIN = 12 V, VOUT = 1.05 V | 150 | ns | ||
| tOFF(MIN) | Minimum OFF time | TA = 25°C, VFB = 0.7 V | 260 | 330 | ns | |
6.7 Typical Characteristics
VIN = 12 V, TA = 25°C (unles otherwise noted)
Figure 1. VIN Current vs Junction Temperature
Figure 3. EN Current vs EN Voltage
Figure 5. 1.05-V Output Voltage vs Output Current
Figure 7. Efficiency vs Output Current
Figure 9. Switching Frequency vs Output Current
Figure 2. VIN Shutdown Current vs Junction Temperature
Figure 4. VFB Voltage vs Junction Temperature
Figure 6. 1.05-V Output Voltage vs Input Voltage
Figure 8. Switching Frequency vs Input Voltage