ZHCSCT5A September   2014  – January 2017 TPS54561-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed-Frequency PWM Control
      2. 7.3.2  Slope Compensation Output Current
      3. 7.3.3  Pulse-Skipping Eco-mode Control Scheme
      4. 7.3.4  Low-Dropout Operation and Bootstrap Voltage (BOOT)
      5. 7.3.5  Error Amplifier
      6. 7.3.6  Adjusting the Output Voltage
      7. 7.3.7  Enable and Adjust Undervoltage Lockout
      8. 7.3.8  Soft-Start and Tracking Pin (SS/TR)
      9. 7.3.9  Sequencing
      10. 7.3.10 Constant Switching Frequency and Timing Resistor (RT/CLK Pin)
      11. 7.3.11 Accurate Current-Limit Operation and Maximum Switching Frequency
      12. 7.3.12 Synchronization to RT/CLK Pin
      13. 7.3.13 Power Good (PWRGD Pin)
      14. 7.3.14 Overvoltage Protection
      15. 7.3.15 Thermal Shutdown
      16. 7.3.16 Small-Signal Model for Loop Response
      17. 7.3.17 Simplified Small-Signal Model for Peak-Current-Mode Control
      18. 7.3.18 Small-Signal Model for Frequency Compensation
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation With VI = < 4.5 V (Minimum VDD)
      2. 7.4.2 Operation With EN Control
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design with WEBENCH® Tools
        2. 8.2.2.2  Selecting the Switching Frequency
        3. 8.2.2.3  Output Inductor Selection (L(O))
        4. 8.2.2.4  Output Capacitor
        5. 8.2.2.5  Catch Diode
        6. 8.2.2.6  Input Capacitor
        7. 8.2.2.7  Soft-Start Capacitor
        8. 8.2.2.8  Bootstrap Capacitor Selection
        9. 8.2.2.9  Undervoltage Lockout Set Point
        10. 8.2.2.10 Output Voltage and Feedback Resistor Selection
        11. 8.2.2.11 Compensation
        12. 8.2.2.12 Discontinuous Conduction Mode and Eco-mode Boundary
        13. 8.2.2.13 Power Dissipation Estimate
      3. 8.2.3 Safe Operating Area
      4. 8.2.4 Application Curves
      5. 8.2.5 Inverting Power Supply
      6. 8.2.6 Split-Rail Power Supply
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
    2. 11.2 文档支持
      1. 11.2.1 相关文档
      2. 11.2.2 使用 WEBENCH® 工具定制设计方案
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)

Over operating free-air temperature range (unless otherwise noted)
VALUE UNIT
MIN MAX
Input voltage VDD –0.3 65 V
EN –0.3 8.4
FB –0.3 3
COMP –0.3 3
PWRGD –0.3 6
SS/TR –0.3 3
RT/CLK –0.3 3.6
Output voltage BOOT-SW –0.3 8 V
SW –0.6 65
SW, 5-ns transient –7 65
SW, 10-ns transient –2 65
Operating junction temperature -40 150 °C
Storage temperature range, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Rec–65ommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC-Q100-011 ±750
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VDD Supply input voltage 4.5 60 V
VO Output voltage 0.8 58.8 V
IO Output current 0 5 A
TJ Junction temperature –40 150 °C

6.4 Thermal Information

THERMAL METRIC(1)(2) TPS54561-Q1 UNIT
DPR
10 PINS
RθJA Junction-to-ambient thermal resistance (standard board) 35.1 °C/W
RθJCtop Junction-to-case (top) thermal resistance 34.1 °C/W
RθJB Junction-to-board thermal resistance 12.3 °C/W
ψJT Junction-to-top characterization parameter 0.3 °C/W
ψJB Junction-to-board characterization parameter 12.5 °C/W
RθJCbot Junction-to-case (bottom) thermal resistance 2.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) Determination of the power rating at a specific ambient temperature must be at the maximum junction temperature of 150°C. This is the point where distortion starts to increase substantially. See the power dissipation estimate in the Power Dissipation Estimate section of this data sheet for more information.

6.5 Electrical Characteristics

TJ = –40°C to 150°C, VDD = 4.5 to 60 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VDD PIN)
Operating input voltage 4.5 60 V
Internal undervoltage lockout threshold VDD rising 4.1 4.3 4.48 V
Internal undervoltage lockout threshold hysteresis 325 mV
Shutdown supply current V(EN) = 0 V, TA = 25°C, 4.5 V ≤ VDD ≤ 60 V 2.25 4.5 µA
Operating: nonswitching supply current V(FB) = 0.9 V, TA = 25°C 152 200
ENABLE AND UVLO (EN PIN)
V(EN)th Enable threshold voltage No voltage hysteresis, rising and falling 1.1 1.2 1.3 V
Input current Enable threshold + 50 mV –4.6 µA
Enable threshold – 50 mV –0.58 –1.2 -1.8
I(HYS) Hysteresis current –2.2 –3.4 -4.5 µA
VOLTAGE REFERENCE
Vref Voltage reference 0.792 0.8 0.808 V
HIGH-SIDE MOSFET
On-resistance VDD = 12 V, V(BOOT-SW) = 6 V 87 185 mΩ
ERROR AMPLIFIER
Input current 50 nA
gm(ea) Error-amplifier transconductance –2 µA < I(COMP) < 2 µA, V(COMP) = 1 V 350 µS
Error-amplifier transconductance (gm) during soft-start –2 µA < I(COMP) < 2 µA, V(COMP) = 1 V, V(FB) = 0.4 V 78 µS
A(OL) Error-amplifier open-loop dc gain V(FB) = 0.8 V 10 000 V/V
Minnimum unity-gain bandwidth 2500 kHz
Error-amplifier source and sink V(COMP) = 1 V, 100 mV overdrive ±30 µA
gm(ps) COMP to SW current transconductance 17 S
CURRENT LIMIT
Current limit threshold All VDD and temperatures, open loop(1) 6.3 7.5 8.8 A
All temperatures, VDD = 12 V, open loop(1) 6.3 7.5 8.3
VDD = 12 V, TA = 25°C, open loop(1) 7.1 7.5 7.9
THERMAL SHUTDOWN
Thermal shutdown 176 °C
Thermal shutdown hysteresis 12 °C
EXTERNAL CLOCK (RT/CLK PIN)
RT/CLK high threshold 1.55 2 V
RT/CLK low threshold 0.5 1.2 V
SOFT-START AND TRACKING (SS/TR PIN)
I(SS) Charge current V(SS/TR) = 0.4 V 1.7 µA
SS/TR-to-FB matching V(SS/TR) = 0.4 V 42 mV
SS/TR-to-reference crossover 98% of nominal FB voltage 1.16 V
SS/TR discharge current (overload) V(FB) = 0 V, V(SS/TR) = 0.4 V 354 µA
SS/TR discharge voltage V(FB) = 0 V 54 mV
POWER GOOD (PWRGD PIN)
FB threshold for PWRGD low FB falling 91%
FB threshold for PWRGD high FB rising 93%
FB threshold for PWRGD low FB rising 108%
FB threshold for PWRGD high FB falling 106%
Hysteresis FB falling 2%
Output-high leakage V(PWRGD) = 5.5 V, TA = 25°C 10 nA
On-resistance I(PWRGD) = 3 mA, V(FB) < 0.79 V 45 Ω
Minimum input voltage for defined output voltage V(PWRGD) < 0.5 V, I(PWRGD) = 100 µA 0.9 2 V
(1) Measure open-loop current limit directly at the SW pin. The current is independent of the inductor value and slope compensation.

6.6 Timing Requirements

MIN TYP MAX UNIT
RT/CLK
Minimum CLK input pulse duration 15 ns

6.7 Switching Characteristics

TJ = –40°C to 150°C, VDD = 4.5 V to 60 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ENABLE AND UVLO (EN PIN)
Enable to COMP active VDD = 12 V, TA = 25°C 540 µs
CURRENT-LIMIT
td(CL) Current limit threshold delay 60 ns
SW
t(ON) Minimum controllable on-time VDD = 23.7 V, VO = 5 V, IO = 3.5 A, R(RT) = 39.6 kΩ, TA = 25°C 100 ns
RT/CLK
Switching frequency range using RT mode 100 2500 kHz
f(SW) Switching frequency R(RT) = 200 kΩ 450 500 550 kHz
Switching frequency range using CLK mode 160 2300 kHz
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
RT/CLK falling edge to SW rising edge delay Measured at 500 kHz with an RT resistor (R(RT)) in series 55 ns
PLL lock-in time Measured at 500 kHz 78 µs

6.8 Typical Characteristics

TPS54561-Q1 D004_slvscc4.gif
Figure 1. On-Resistance vs Junction Temperature
TPS54561-Q1 D027_SLVSC60.gif
VDD = 12 V
Figure 3. Switch-Current Limit vs Junction Temperature
TPS54561-Q1 D025_slvscc4.gif
R(RT) = 200 kΩ VDD = 12 V
Figure 5. Switching Frequency vs Junction Temperature
TPS54561-Q1 D023_slvscc4.gif
Figure 7. Switching Frequency vs RT/CLK Resistance,
High-Frequency Range
TPS54561-Q1 D021_SLVSC60.gif
VDD = 12 V
Figure 9. EA Transconductance During Soft-Start vs Junction Temperature
TPS54561-Q1 D019_slvscc4.gif
VDD = 12 V V(EN) = Threshold + 50 mV
Figure 11. EN Pin Current vs Junction Temperature
TPS54561-Q1 D017_slvscc4.gif
VDD = 12 V
Figure 13. EN Pin Current Hysteresis vs Junction Temperature
TPS54561-Q1 D015_SLVSC60.gif
VDD = 12 V
Figure 15. Shutdown Supply Current vs Junction Temperature
TPS54561-Q1 D013_SLVSC60.gif
VDD = 12 V
Figure 17. I(VDD) Supply Current vs Junction Temperature
TPS54561-Q1 D011_SLVSC60.gif
Figure 19. BOOT-SW UVLO vs Junction Temperature
TPS54561-Q1 D009_slvscc4.gif
VDD = 12 V
Figure 21. PWRGD On-Resistance vs Junction Temperature
TPS54561-Q1 D007_SLVSC60.gif
VDD = 12 V TJ = 25ºC
Figure 23. SS/TR to FB Offset vs FB
TPS54561-Q1 D005_slvscc4.gif
Figure 25. 5-V Start and Stop Voltage (see Low-Dropout Operation and Bootstrap Voltage (BOOT))
TPS54561-Q1 D028_slvscc4.gif
VDD = 12 V
Figure 2. Voltage Reference vs Junction Temperature
TPS54561-Q1 D026_slvscc4.gif
Figure 4. Switch-Current Limit vs Input Voltage
TPS54561-Q1 D024_slvscc4.gif
Figure 6. Switching Frequency vs RT/CLK Resistance,
Low-Frequency Range
TPS54561-Q1 D022_SLVSC60.gif
VDD = 12 V
Figure 8. EA Transconductance vs Junction Temperature
TPS54561-Q1 D020_slvscc4.gif
VDD = 12 V
Figure 10. EN Pin Threshold Voltage vs Junction Temperature
TPS54561-Q1 D018_slvscc4.gif
VDD = 12 V V(EN) = Threshold – 50 mV
Figure 12. EN Pin Current vs Junction Temperature
TPS54561-Q1 D016_SLVSCC4.gif
Figure 14. Switching Frequency vs FB
TPS54561-Q1 D014_SLVSC60.gif
TJ = 25ºC
Figure 16. Shutdown Supply Current vs Input Voltage
TPS54561-Q1 D012_SLVSC60.gif
TJ = 25ºC
Figure 18. I(VDD) Supply Current vs Input Voltage
TPS54561-Q1 D010_SLVSC60.gif
Figure 20. Input Voltage UVLO vs Junction Temperature
TPS54561-Q1 D008_SLVSC60.gif
VDD = 12 V
Figure 22. PWRGD Threshold vs Junction Temperature
TPS54561-Q1 D006_SLVSC60.gif
VDD = 12 V V(FB) = 0.4 V
Figure 24. SS/TR to FB Offset vs Temperature
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