ZHCS308F May   2009  – May 2017 TPS54620

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configurations and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed Frequency PWM Control
      2. 7.3.2  Continuous Current Mode Operation (CCM)
      3. 7.3.3  VIN and Power VIN Pins (VIN and PVIN)
      4. 7.3.4  Voltage Reference
      5. 7.3.5  Adjusting the Output Voltage
      6. 7.3.6  Safe Start-Up into Prebiased Outputs
      7. 7.3.7  Error Amplifier
      8. 7.3.8  Slope Compensation
      9. 7.3.9  Enable and Adjusting Undervoltage Lockout
      10. 7.3.10 Adjustable Switching Frequency and Synchronization (RT/CLK)
      11. 7.3.11 Slow Start (SS/TR)
      12. 7.3.12 Power Good (PWRGD)
      13. 7.3.13 Output Overvoltage Protection (OVP)
      14. 7.3.14 Overcurrent Protection
        1. 7.3.14.1 High-Side MOSFET Overcurrent Protection
        2. 7.3.14.2 Low-Side MOSFET Overcurrent Protection
      15. 7.3.15 Thermal Shutdown
      16. 7.3.16 Small Signal Model for Loop Response
      17. 7.3.17 Simple Small Signal Model for Peak Current Mode Control
      18. 7.3.18 Small Signal Model for Frequency Compensation
    4. 7.4 Device Functional Modes
      1. 7.4.1 Adjustable Switching Frequency (RT Mode)
      2. 7.4.2 Synchronization (CLK Mode)
      3. 7.4.3 Bootstrap Voltage (BOOT) and Low-Dropout Operation
      4. 7.4.4 Sequencing (SS/TR)
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedures
        1. 8.2.2.1  Custom Design With WEBENCH Tools
        2. 8.2.2.2  Operating Frequency
        3. 8.2.2.3  Output Inductor Selection
        4. 8.2.2.4  Output Capacitor Selection
        5. 8.2.2.5  Input Capacitor Selection
        6. 8.2.2.6  Slow-Start Capacitor Selection
        7. 8.2.2.7  Bootstrap Capacitor Selection
        8. 8.2.2.8  Undervoltage Lockout Set Point
        9. 8.2.2.9  Output Voltage Feedback Resistor Selection
          1. 8.2.2.9.1 Minimum Output Voltage
        10. 8.2.2.10 Compensation Component Selection
        11. 8.2.2.11 Fast Transient Considerations
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Estimated Circuit Area
    4. 10.4 Thermal Consideration
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 使用 WEBENCH 工具定制设计方案
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RHL|14
  • RGY|14
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Input voltage VIN –0.3 20 V
PVIN –0.3 20 V
EN –0.3 6 V
BOOT –0.3 27 V
VSENSE –0.3 3 V
COMP –0.3 3 V
PWRGD –0.3 6 V
SS/TR –0.3 3 V
RT/CLK –0.3 6 V
Output voltage BOOT-PH 0 7.7 V
PH –1 20 V
PH 10ns Transient –3 20 V
Vdiff (GND to exposed thermal pad) –0.2 0.2 V
Source current RT/CLK ±100 µA
PH Current Limit A
Sink current PH Current Limit A
PVIN Current Limit A
COMP ±200 µA
PWRGD –0.1 5 mA
Operating junction temperature –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input voltage 4.5 17 V
PVIN Power stage input voltage 1.6 17 V
Output current 0 6 A
TJ Operating junction temperature –40 150 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS54620 UNIT
RGY (VQFN) RHL (VQFN)
14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 40.1 40.1 °C/W
RθJCtop Junction-to-case (top) thermal resistance 34.4 34.4 °C/W
RθJB Junction-to-board thermal resistance 11.4 11.4 °C/W
ψJT Junction-to-top characterization parameter 0.5 0.5 °C/W
ψJB Junction-to-board characterization parameter 11.4 11.4 °C/W
RθJCbot Junction-to-case (bottom) thermal resistance 1.8 1.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

TJ = –40°C to 150°C, VIN = 4.5 V to 17 V, PVIN = 1.6 V to 17 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN AND PVIN PINS)
PVIN operating input voltage 1.6 17 V
VIN operating input voltage 4.5 17 V
VIN internal UVLO threshold VIN rising 4 4.5 V
VIN internal UVLO hysteresis 150 mV
VIN shutdown supply Current EN = 0 V 2 5 μA
VIN operating—nonswitching supply current VSENSE = 810 mV 600 800 μA
ENABLE AND UVLO (EN PIN)
Enable threshold Rising 1.21 1.26 V
Enable threshold Falling 1.10 1.17 V
Input current EN = 1.1 V 1.15 μA
Hysteresis current EN = 1.3 V 3.4 μA
VOLTAGE REFERENCE
Voltage reference 0 A ≤ IOUT ≤ 6 A 0.792 0.8 0.808 V
MOSFET
High-side switch resistance BOOT-PH = 3 V 32 60 mΩ
High-side switch resistance(1) BOOT-PH = 6 V 26 40 mΩ
Low-side Switch Resistance(1) VIN = 12 V 19 30 mΩ
ERROR AMPLIFIER
Error amplifier Transconductance (gm) –2 μA < ICOMP < 2 μA, V(COMP) = 1 V 1300 μMhos
Error amplifier DC gain VSENSE = 0.8 V 1000 3100 V/V
Error amplifier source/sink V(COMP) = 1 V, 100-mV input overdrive ±110 μA
Start switching threshold 0.25 V
COMP to Iswitch gm 16 A/V
CURRENT LIMIT
High-side switch current limit threshold 8 11 A
Low-side switch sourcing current limit 7 10 A
Low-side switch sinking current limit 2.3 A
THERMAL SHUTDOWN
Thermal shutdown 160 175 °C
Thermal shutdown hysteresis 10 °C
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
Minimum switching frequency Rrt = 240 kΩ (1%) 160 200 240 kHz
Switching frequency Rrt = 100 kΩ (1%) 400 480 560 kHz
Maximum switching frequency Rrt = 29 kΩ (1%) 1440 1600 1760 kHz
Minimum pulse width 20 ns
RT/CLK high threshold 2 V
RT/CLK low threshold 0.8 V
RT/CLK falling edge to PH rising edge delay Measured at 500 kHz with RT resistor in series 66 ns
Switching frequency range (RT mode set point and PLL mode) 200 1600 kHz
PH (PH PIN)
Minimum on-time Measured at 90% to 90% of VIN, 25°C, IPH = 2 A 94 135 ns
Minimum off-time BOOT-PH ≥ 3 V 0 ns
BOOT (BOOT PIN)
BOOT-PH UVLO 2.1 3 V
SLOW START AND TRACKING (SS/TR PIN)
SS charge current 2.3 μA
SS/TR to VSENSE matching V(SS/TR) = 0.4 V 29 60 mV
POWER GOOD (PWRGD PIN)
VSENSE threshold VSENSE falling (Fault) 91 % Vref
VSENSE rising (Good) 94 % Vref
VSENSE rising (Fault) 109 % Vref
VSENSE falling (Good) 106 % Vref
Output high leakage VSENSE = Vref, V(PWRGD) = 5.5 V 30 100 nA
Output low I(PWRGD) = 2 mA 0.3 V
Minimum VIN for valid output V(PWRGD) < 0.5 V at 100 μA 0.6 1 V
Minimum SS/TR voltage for PWRGD 1.4 V
(1) Measured at pins

6.6 Typical Characteristics

TPS54620 rdson_tj_lvs949.gif
Figure 1. High-Side RDS(on) vs Temperature
TPS54620 vref_tj_lvs949.gif
Figure 3. Voltage Reference vs Temperature
TPS54620 isd_vi_lvs949.gif
Figure 5. Shutdown Quiescent Current vs Input Voltage
TPS54620 hys_pullup_lvs949.gif
Figure 7. Pin Pullup Current vs Temperature
TPS54620 iq_vi_lvs949.gif
Figure 9. Non-Switching Operating Quiescent Current (VIN) vs Input Voltage
TPS54620 sstr_tj_lvs949.gif
Figure 11. (SS/TR - VSENSE) Offset vs Temperature
TPS54620 hi_sd_cur_vi_lvs949.gif
Figure 13. High-Side Current Limit Threshold vs Input Voltage
TPS54620 mincon_duty_lvs949.gif
Figure 15. Minimum Controllable Duty Ratio vs Junction Temperature
TPS54620 rdsonl_tj_lvs949.gif
Figure 2. Low-Side RDS(on) vs Temperature
TPS54620 fsw_tj_lvs949.gif
Figure 4. Oscillator Frequency vs Temperature
TPS54620 hys_tj_lvs949.gif
Figure 6. EN Pin Hysteresis Current vs Temperature
TPS54620 en_tj_lvs949.gif
Figure 8. Pin UVLO Threshold vs Temperature
TPS54620 ss_tj_lvs949.gif
Figure 10. Slow Start Charge Current vs Temperature
TPS54620 chg_cur_tj_lvs949.gif
Figure 12. PWRGD Threshold vs Temperature
TPS54620 t_tj_lvs949.gif
Figure 14. Minimum Controllable On-Time vs Temperature
TPS54620 boot_tj_lvs949.gif
Figure 16. BOOT-PH UVLO Threshold vs Temperature
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