Both high-side and low-side FET use a SenseFET architecture for current sensing to achieve accurate and temperature compensated current monitoring. This SenseFET architecture uses the parasitic resistance of the FETs to achieve lossless current sense with no external components.

When multiple (2×, 3×, or 4×) devices operate in multi-phase application, all devices share the same internal control voltage through VSHARE pin. The sensed current in each phase is regulated by the VSHARE voltage by internal transconductance amplifier, to achieve loop compensation and current balancing between different phases. The amplifier output voltage is compared with an internal PWM ramp to generate the PWM pulse.