ZHCSPA4 march   2023 TPS548C26

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 绝对最大额定值
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Internal VCC LDO and Using an External Bias on VCC and VDRV Pin
      2. 7.3.2  Input Undervoltage Lockout (UVLO)
        1. 7.3.2.1 Fixed VCC_OK UVLO
        2. 7.3.2.2 Fixed VDRV UVLO
        3. 7.3.2.3 Fixed PVIN UVLO
        4. 7.3.2.4 Enable
      3. 7.3.3  Set the Output Voltage
      4. 7.3.4  Differential Remote Sense and Feedback Divider
      5. 7.3.5  Start-up and Shutdown
      6. 7.3.6  Loop Compensation
      7. 7.3.7  Set Switching Frequency and Operation Mode
      8. 7.3.8  Switching Node (SW)
      9. 7.3.9  Overcurrent Limit and Low-side Current Sense
      10. 7.3.10 Negative Overcurrent Limit
      11. 7.3.11 Zero-Crossing Detection
      12. 7.3.12 Input Overvoltage Protection
      13. 7.3.13 Output Undervoltage and Overvoltage Protection
      14. 7.3.14 Overtemperature Protection
      15. 7.3.15 Power Good
    4. 7.4 Device Functional Modes
      1. 7.4.1 Forced Continuous-Conduction Mode
      2. 7.4.2 Auto-Skip Eco-mode Light Load Operation
      3. 7.4.3 Powering the Device from a 12-V Bus
      4. 7.4.4 Powering the Device From a Split-rail Configuration
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Inductor Selection
        2. 8.2.3.2 Input Capacitor Selection
        3. 8.2.3.3 Output Capacitor Selection
        4. 8.2.3.4 VCC and VRDV Bypass Capacitor
        5. 8.2.3.5 BOOT Capacitor Selection
        6. 8.2.3.6 PG Pullup Resistor Selection
      4. 8.2.4 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Thermal Performance on TPS548C26 Evaluation Board
  9. 9 Device and Documentation Support
    1. 9.1 接收文档更新通知
    2. 9.2 支持资源
    3. 9.3 Trademarks
    4. 9.4 静电放电警告
    5. 9.5 术语表
  10. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.4 Thermal Information

THERMAL METRIC(1) DEVICE UNIT
RXX (QFN, JEDEC) RXX (QFN, TI EVM)
37 PINS 37 PINS
RθJA Junction-to-ambient thermal resistance 25.4 15.7 °C/W
RθJB Junction-to-board thermal resistance 3.6 Not applicable(2) °C/W
RθJC(top) Junction-to-case (top) thermal resistance 6.6 Not applicable(2) °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.1 Not applicable(2) °C/W
ψJT Junction-to-top characterization parameter 0.1(3) 2.0(4) °C/W
ψJB Junction-to-board characterization parameter 3.6 5.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The thermal test or simulation setup is not applicable to a TI EVM layout.
(3) The power dissipation is evenly distributed across all the silicon areas inside the package on the thermal simulation based on the JEDEC standard, resulting in the hot spot being centered in the package.
(4) The power dissipation is concentrated on the power FET area on the thermal simulation based on the TI EVM layout, resulting in the hot spot being offset inside the package.
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