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6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾⁽²⁾

			MIN	MAX	UNIT
Input voltage	PVIN		–0.3	25	V
	VDD		–0.3	25
	BOOT		–0.3	34
	BOOT to SW	DC	–0.3	7.7
	BOOT to SW	< 10 ns	–0.3	9.0
	PMB_CLK, PMB_DATA		–0.3	6
	EN_UVLO, VOSNS, MODE, ADDR, ILIM		–0.3	7.7
	RSP, RESV_TRK, VSEL		–0.3	3.6
	RSN		–0.3	0.3
	PGND, AGND, DRGND		–0.3	0.3
	SW	DC	–0.3	25
	SW	< 10 ns	–5	27
Output voltage	PGOOD, BP		–0.3	7.7	V
Output voltage	SMB_ALRT#, PMB_DATA		–0.3	6	V
Junction temperature, T_J			–55	150	°C
Storage temperature, T_stg			–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to the network ground terminal unless otherwise noted.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
Input voltage	PVIN		1.5	16	V
	VDD		4.5	22
	BOOT		–0.1	24.5
	BOOT to SW	DC	–0.1	6.5
	BOOT to SW	< 10 ns	–0.1	7
	PMB_CLK, PMB_DATA		–0.1	5.5
	EN_UVLO, VOSNS, MODE, ADDR, ILIM		–0.1	5.5
	RSP, RESV_TRK, VSEL		–0.1	3.3
	RSN		–0.1	0.1
	PGND, AGND, DRGND		–0.1	0.1
	SW	DC	–0.1	18
	SW	< 10 ns	–5	27
Output voltage	PGOOD, BP		–0.1	7	V
Output voltage	SMB_ALRT#, PMB_DATA		–0.1	5.5	V
Junction temperature, T_J			–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS549D22	UNIT
		RVF (LQFN-CLIP)
		(40 PINS)
R_θJA	Junction-to-ambient thermal resistance	28.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	18.3	°C/W
R_θJB	Junction-to-board thermal resistance	3.6	°C/W
ψ_JT	Junction-to-top characterization parameter	0.96	°C/W
ψ_JB	Junction-to-board characterization parameter	3.6	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	0.6	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating free-air temperature range, V_VDD = 12 V, V_{EN_UVLO} = 5 V (unless otherwise noted)

PARAMETER		TEST CONDITION		MIN	TYP	MAX	UNIT
MOSFET ON-RESISTANCE (R_DS(on))
R_DS(on)	High-side FET	(V_BOOT – V_SW) = 5 V, I_D = 25 A, T_J = 25°C			2.9		mΩ
R_DS(on)	Low-side FET	V_VDD = 5 V, I_D = 25 A, T_J = 25°C			1.2		mΩ
INPUT SUPPLY AND CURRENT
V_VDD	VDD supply voltage	Nominal VDD voltage range		4.5		22	V
I_VDD	VDD bias current	No load, power conversion enabled (no switching), T_A = 25°C,			2		mA
I_VDDSTBY	VDD standby current	No load, power conversion disabled, T_A = 25°C			700		µA
UNDERVOLTAGE LOCKOUT
V_{VDD_UVLO}	VDD UVLO rising threshold			4.23	4.25	4.34	V
V_{VDD_UVLO(HYS)}	VDD UVLO hysteresis				0.2		V
V_{EN_ON_TH}	EN_UVLO on threshold			1.45	1.6	1.75	V
V_{EN_HYS}	EN_UVLO hysteresis			270	300	340	mV
I_{EN_LKG}	EN_UVLO input leakage current	V_{EN_UVLO} = 5 V		–1	0	1	µA
INTERNAL REFERENCE VOLTAGE AND RANGE
V_INTREF	Internal REF voltage				900.4		mV
V_INTREFTOL	Internal REF voltage tolerance	–40°C ≤ T_J ≤ 125°C		–0.5%		0.5%
V_INTREF	Internal REF voltage range			0.6		1.2	V
OUTPUT VOLTAGE
V_{IOS_LPCMP}	Loop comparator input offset voltage⁽¹⁾			–2.5		2.5	mV
I_RSP	RSP input current	V_RSP = 600 mV		–1		1	µA
I_VO(dis)	VO discharge current	V_VO = 0.5 V, power conversion disabled		8	12		mA
DIFFERENTIAL REMOTE SENSE AMPLIFIER
f_UGBW	Unity gain bandwidth⁽¹⁾			5	7		MHz
A₀	Open loop gain⁽¹⁾			75			dB
SR	Slew rate⁽¹⁾				±4.7		V/µsec
V_IRNG	Input range⁽¹⁾			–0.2		1.8	V
V_OFFSET	Input offset voltage⁽¹⁾			–3.5		3.5	mV
INTERNAL BOOT STRAP SWITCH
V_F	Forward voltage	V_BP-BOOT, I_F = 10 mA, T_A = 25°C			0.1	0.2	V
I_BOOT	VBST leakage current	V_BOOT = 30 V, V_SW = 25 V, T_A = 25°C			0.01	1.5	µA
SWITCHING FREQUENCY
f_SW	VO switching frequency⁽²⁾	V_IN = 12 V, V_VO = 1 V, T_A = 25°C		275	315	350	kHz
				380	425	475
				490	550	615
				585	650	740
				740	825	930
				790	900	995
				920	1025	1160
				950	1125	1250
t_ON(min)	Minimum on time⁽¹⁾				60		ns
t_OFF(min)	Minimum off time⁽¹⁾	DRVH falling to rising				300	ns
MODE, VSEL, ADDR DETECTION
V_{DETECT_TH}	MODE, VSEL, and ADDR detection voltage	V_BP = 2.93 V, R_HIGH = 100 kΩ	Open		V_BP		V
			R_LOW = 187 kΩ		1.9091
			R_LOW = 165 kΩ		1.8243
			R_LOW = 147 kΩ		1.7438
			R_LOW = 133 kΩ		1.6725
			R_LOW = 121 kΩ		1.6042
			R_LOW = 110 kΩ		1.5348
			R_LOW = 100 kΩ		1.465
			R_LOW = 90.9 kΩ		1.3952
			R_LOW= 82.5 kΩ		1.3245
			R_LOW = 75 kΩ		1.2557
			R_LOW = 68.1 kΩ		1.187
			R_LOW = 60.4 kΩ		1.1033
			R_LOW = 53.6 kΩ		1.0224
			R_LOW = 47.5 kΩ		0.9436
			R_LOW = 42.2 kΩ		0.8695
			R_LOW = 37.4 kΩ		0.7975
			R_LOW = 33.2 kΩ		0.7303
			R_LOW = 29.4 kΩ		0.6657
			R_LOW = 25.5 kΩ		0.5953
			R_LOW = 22.1 kΩ		0.5303
			R_LOW = 19.1 kΩ		0.4699
			R_LOW = 16.5 kΩ		0.415
			R_LOW = 14.3 kΩ		0.3666
			R_LOW = 12.1 kΩ		0.3163
			R_LOW = 10 kΩ		0.2664
			R_LOW = 7.87 kΩ		0.2138
			R_LOW = 6.19 kΩ		0.1708
			R_LOW = 4.64 kΩ		0.1299
			R_LOW = 3.16 kΩ		0.0898
			R_LOW = 1.78 kΩ		0.0512
			R_LOW = 0 Ω		GND
SOFT START
t_SS	Soft-start time	V_OUT rising from 0 V to 95% of final set point, R_{MODE_HIGH} = 100 kΩ	R_{MODE_LOW}= 60.4 kΩ	7	8⁽³⁾	10	ms
			R_{MODE_LOW} = 53.6 kΩ	3.6	4⁽⁴⁾	5.2
			R_{MODE_LOW} = 47.5 kΩ	1.6	2	2.8
			R_{MODE_LOW} = 42.2 kΩ	0.8	1	1.6
POWER-ON DELAY
t_PODLY	Power-on delay time	Delay from enable to switching POD[2:0] = 000			256		µs
		Delay from enable to switching POD[2:0] = 001			512		µs
		Delay from enable to switching POD[2:0] = 010			1.024		ms
		Delay from enable to switching POD[2:0] = 011			2.048
		Delay from enable to switching POD[2:0] = 100			4.096
		Delay from enable to switching POD[2:0] = 101			8.192
		Delay from enable to switching POD[2:0] = 110			16.384
		Delay from enable to switching POD[2:0] = 111			32.768
PGOOD COMPARATOR
V_PGTH	PGOOD threshold	PGOOD in from higher		105	108	111	%V_REF
		PGOOD in from lower		89	92	95
		PGOOD out to higher			120
		PGOOD out to lower			68
I_PG	PGOOD sink current	V_PGOOD = 0.5 V			6.9		mA
t_PGDLY	PGOOD delay time	Delay for PGOOD going in, PGD[2:0] = 000			256		µs
		Delay for PGOOD going in, PGD[2:0] = 001			512		µs
		Delay for PGOOD going in, PGD[2:0] = 010			1.024		ms
		Delay for PGOOD going in, PGD[2:0] = 011			2.048
		Delay for PGOOD going in, PGD[2:0] = 100			4.096
		Delay for PGOOD going in, PGD[2:0] = 101			8.192
		Delay for PGOOD going in, PGD[2:0] = 110			16.384
		Delay for PGOOD going in, PGD[2:0] = 111			131
		Delay for PGOOD coming out				2	µs
I_PGLK	PGOOD leakage current	V_PGOOD = 5 V		–1	0	1	μA
CURRENT DETECTION
V_ILM	V_ILIM voltage range	On-resistance (R_DS(on)) sensing		0.1		1.2	V
I_{OCL_VA}	Valley current limit threshold	R_LIM = 130 kΩ			40		A
		OC tolerance			±10%⁽⁵⁾
		R_LIM = 97.6 kΩ			30		A
		OC tolerance			±15%⁽⁵⁾
		R_LIM = 64.9 kΩ			20		A
		OC tolerance			±20%
I_{OCL_VA_N}	Negative valley current limit threshold	R_LIM = 130 kΩ			–40		A
I_{OCL_VA_N}	Negative valley current limit threshold	R_LIM = 97.6 kΩ			–30		A
		R_LIM = 64.9 kΩ			–20
I_{CLMP_LO}	Clamp current at V_LIM clamp at lowest	V_{ILIM_CLMP} = 0.1 V, T_A = 25°C			6.25		A
I_{CLMP_HI}	Clamp current at V_LIM clamp at highest	V_{ILIM_CLMP} = 1.2 V, T_A = 25°C			75		A
V_ZC	Zero cross detection offset				0		mV
PROTECTIONS AND OOB
V_BPUVLO	BP UVLO threshold voltage	Wake-up			3.32		V
V_BPUVLO	BP UVLO threshold voltage	Shutdown			3.11
V_OVP	OVP threshold voltage	OVP detect voltage		117%	120%	123%	V_REF
t_OVPDLY	OVP response time	100-mV over drive				1	µs
V_UVP	UVP threshold voltage	UVP detect voltage		65%	68%	71%	V_REF
t_UVPDLY	UVP delay filter delay time				1		ms
V_OOB	OOB threshold voltage				8%		V_REF
t_HICDLY	Hiccup blanking time	t_SS = 1 ms			16		ms
		t_SS = 2 ms			24		ms
		t_SS = 4 ms			38		ms
		t_SS = 8 ms			67		ms
BP VOLTAGE
V_BP	BP LDO output voltage	V_IN = 12 V, 0 A ≤ I_LOAD ≤ 10 mA,			5.07		V
V_BPDO	BP LDO dropout voltage	V_IN = 4.5 V, I_LOAD = 30 mA, T_A = 25°C				365	mV
I_BPMAX	BP LDO overcurrent limit	V_IN = 12 V, T_A= 25°C			100		mA
PMB_CLK and PMB_DATA INPUT BUFFER LOGIC THRESHOLDS
V_IL-PMBUS	PMB_CLK and PMB_DATA low-level input voltage⁽¹⁾					0.8	V
V_IH-PMBUS	PMB_CLK and PMB_DATA high-level input voltage⁽¹⁾			1.35			V
V_HY-PMBUS	PMB_CLK and PMB_DATA hysteresis voltage⁽¹⁾				150		mV
PMB_CLK and SMB_ALRT OUTPUT PULLDOWN
V_OL-PMBUS	PMB_DATA and SMB_ALRT low-level output voltage⁽¹⁾	I_SINK = 20 mA				0.4	V
THERMAL SHUTDOWN
T_SDN	Built-In thermal shutdown threshold⁽¹⁾	Shutdown temperature		155	165		°C
T_SDN	Built-In thermal shutdown threshold⁽¹⁾	Hysteresis				30	°C

(1) Specified by design. Not production tested.

(2) Correlated with close loop EVM measurement at load current of 30 A.

(3) In order to use the 8-ms SS setting, follow the steps outlined in Application Workaround to Support 4-ms and 8-ms SS Settings.

(4) In order to use the 4-ms SS setting, follow the steps outlined in Application Workaround to Support 4-ms and 8-ms SS Settings.

(5) Calculated from 20-A test data. Not production tested.

6.6 Typical Characteristics

V_OUT = 1 V	SKIP Mode	f_SW = 650 kHz
V_DD = 5 V

Figure 1. Efficiency vs Output Current

V_OUT = 5.5 V	SKIP Mode	f_SW = 425 kHz
V_DD = 5 V

Figure 3. Efficiency vs Output Current

V_IN = 12 V	f_SW = 650 kHz	I_OUT = 40 A
V_OUT = 1 V	Natural convection

Figure 5. Thermal Image

V_IN = 12 V	f_SW = 650 kHz	I_OUT = 40 A
V_OUT = 1 V	Airflow = 400 LFM

Figure 7. Thermal Image

V_IN = 12 V	f_SW = 425 kHz	I_OUT = 30 A
V_OUT = 5.5 V	Airflow = 200 LFM

Figure 9. Thermal Image

V_OUT= 1 V		V_IN = 12 V
I_OUT from 8 A to 32 A		2.5 A/µs

Figure 11. Transient Response Peak-to-Peak

V_OUT = 1 V	FCCM	f_SW = 650 kHz
V_DD = 5 V

Figure 2. Efficiency vs Output Current

V_OUT = 5.5 V	FCCM	f_SW = 425 kHz
V_DD = 5 V

Figure 4. Efficiency vs Output Current

V_IN = 12 V	f_SW = 650 kHz	I_OUT = 40 A
V_OUT = 1 V	Airflow = 200 LFM

Figure 6. Thermal Image

V_IN = 12 V	f_SW = 425 kHz	I_OUT = 30 A
V_OUT = 5.5 V	Natural convection

Figure 8. Thermal Image

V_IN = 12 V	f_SW = 425 kHz	I_OUT = 30 A
V_OUT = 5.5 V	Airflow = 400 LFM

Figure 10. Thermal Image

V_OUT= 5.5 V		V_IN = 12 V
I_OUT from 6 A to 24 A		2.5 A/µs

Figure 12. Transient Response Peak-to-Peak

Figure 13. PMBus 1-MHz Bus Speed with 1.8-V Pullup

1 – Operation only		4 – Vout Command up to 1.2 V
2 – Turn off		5 – Vout Command down to 0.6 V
3 – Turn on without Margin		6 – Turn off

Figure 15. 6 Sequenced Events – I2C Write/Read

1 – Operation only				4 – 16 Vout Command up to 1.2 V,
2 – Turn off				50 mV per step down to 0.6 V
3 – Turn on without Margin				17 – Turn off

Figure 17. 17 Sequenced Events – I2C Write

1 – Operation only			4 – 16 Vout Command up to 1.2 V,
2 – Turn off			50 mV per step down to 0.6 V
3 – Turn on without Margin			17 – Turn off

Figure 19. 17 Sequenced Events – I2C Write/Read with PEC

1 – Operation only			4 – 16 Vout Command up to 1.2 V,
2 – Turn off			50 mV per step down to 0.6 V
3 – Turn on without Margin			17 – 28 Vout Command from 0.6 V to 1.2 V, 50 mV per step
			29 – Turn off

Figure 21. 29 Sequenced Events – I2C Write/Read

1 – Operation only		4 – Vout Command up to 1.2 V
2 – Turn off		5 – Vout Command down to 0.6 V
3 – Turn on without Margin		6 – Turn off

Figure 14. 6 Sequenced Events – I2C Write

1 – Operation only		4 – Vout Command up to 1.2 V
2 – Turn off		5 – Vout Command down to 0.6 V
3 – Turn on without Margin		6 – Turn off

Figure 16. 6 Sequenced Events – I2C Write/Read with PEC

1 – Operation only			4 – 16 Vout Command up to 1.2 V,
2 – Turn off			50 mV per step down to 0.6 V
3 – Turn on without Margin			17 – Turn off

Figure 18. 17 Sequenced Events – I2C Write/Read

1 – Operation only			4 – 16 Vout Command up to 1.2 V,
2 – Turn off			50 mV per step down to 0.6 V
3 – Turn on without Margin			17 – 28 Vout Command from 0.6 V to 1.2 V, 50 mV per step
			29 – Turn off

Figure 20. 29 Sequenced Events – I2C Write

1 – Operation only			4 – 16 Vout Command up to 1.2 V,
2 – Turn off			50 mV per step down to 0.6 V
3 – Turn on without Margin			17 – 28 Vout Command from 0.6 V to 1.2 V, 50 mV per step
			29 – Turn off

Figure 22. 29 Sequenced Events – I2C Write/Read with PEC

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