ZHCSEW7A December 2015 – April 2016 TPS54A20
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Input Voltage | Power Conversion, VIN | DC w.r.t. PGND, switching | –0.3 | 15 | V |
DC w.r.t. PGND, non-switching | –0.3 | 17 | |||
Bootstrap, V(BOOTA) | DC with respect to PGND | –0.3 | 22 | V | |
DC with respect to SCAP | 6 | V | |||
Bootstrap, V(BOOTB) | DC with respect to PGND | –0.3 | 14 | V | |
DC with respect to SWB | 6 | V | |||
Bias Supply, VG | DC with respect to PGND | –0.3 | 6 | V | |
Series Capacitor Node Voltage, V(SCAP) | DC with respect to PGND | –0.3 | 16 | V | |
Switch Node Voltage, V(SWA, SWB) | DC with respect to PGND | –1 | 9 | ||
Pulse < 10 ns | –4 | 14 | |||
Feedback, V(FB) | –0.3 | 3 | V | ||
Output Voltage | Bias Supply, V(VGA) | DC with respect to PGND | –0.3 | 15 | V |
Voltage | Enable Voltage, V(EN) | –0.3 | 7 | V | |
Soft Start/Freq. Select, V(SS/FSEl) | –0.3 | 3 | |||
Power Good Voltage, V(PGOOD) | –0.3 | 6 | |||
External Sync Clock Voltage, V(SYNC) | –0.3 | 6 | |||
Current Limit/Mode Select, V(ILIM) | –0.3 | 3 | |||
On Time Pin Voltage, V(TON) | –0.3 | 3 | |||
Input Current | Power Conversion, I(VIN) | 6 | A | ||
Bias Supply, I(VG) | 100 | mA | |||
Output Current | Switch Node A, I(SWA) | Current Limit | A | ||
Switch Node B, I(SWB) | Current Limit | A | |||
Operating Junction Temperature, TJ | –40 | 125 | °C | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Input Voltage | 8 | 14 | V | |
VOUT | Output Voltage | 0.5 | VIN/5 | V | |
IOUT | Output Current | 0 | 10 | A | |
TJ | Junction Temperature | -40 | 125 | °C |
THERMAL METRIC(1) | RNJ | UNIT | |
---|---|---|---|
20 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 25(2) | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 13.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 4.9 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 4.7 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.0 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY VOLTAGE (VIN PIN) | ||||||
VIN | VIN Operating | 8 | 12 | 14 | V | |
VIN Input UVLO Voltage | VIN rising | 7.4 | 7.65 | 7.95 | V | |
VIN UVLO hysteresis | 250 | mV | ||||
VIN Input OVLO Voltage | VIN rising | 15.4 | 15.8 | V | ||
VIN falling | 14.1 | 14.8 | V | |||
VIN OVLO hysteresis | 600 | mV | ||||
Shutdown | EN < 0.4 V, VIN = 12 V, TA = 25°C | 47 | µA | |||
IQ | Operating into VIN | FB = 0.53 V, VIN = 12 V, TA = 25°C | 6 | mA | ||
ENABLE (EN PIN) | ||||||
Enable threshold | 1.17 | 1.23 | 1.27 | V | ||
Input current | Enable threshold + 50 mV | –4 | µA | |||
Enable threshold – 50 mV | –1 | µA | ||||
VOLTAGE REFERENCE | ||||||
Voltage Reference | TA = 25°C | 0.5054 | 0.508 | 0.5106 | V | |
–40°C < TJ < 125°C | 0.5029 | 0.508 | 0.5131 | V | ||
FREQUENCY | ||||||
fOSC | Oscillator Frequency | R(SS/FSEL) = Open, 71.5 kΩ, or 48.7 kΩ |
3.6 | 4 | 4.4 | MHz |
R(SS/FSEL) = Short or 35.7 kΩ | 6.3 | 7 | 7.7 | MHz | ||
R(SS/FSEL) = 21.5 kΩ, 15.4 kΩ, or 8.66 kΩ |
9 | 10 | 11 | MHz | ||
SYNC | ||||||
Minimum Input Clock Pulsewidth | 20 | ns | ||||
SYNC high threshold | 2 | V | ||||
SYNC low threshold | 0.8 | V | ||||
Frequency sync range | ±10 | % nominal | ||||
Last SYNC falling/rising edge to return to resistor timing mode if SYNC is not present | 10 MHz: 400 ns 7 MHz: 571 ns 4 MHz : 1 µs |
4 | Cycles | |||
LOW-SIDE A MOSFET | ||||||
On resistance | VG = 5 V, Measured at pins | 6.8 | 10.5 | mΩ | ||
LOW-SIDE B MOSFET | ||||||
On resistance | VG = 5 V, Measured at pins | 9.3 | 14.8 | mΩ | ||
HIGH-SIDE MOSFETS | ||||||
On resistance | Vgs = 5 V, Measured at pins | 27 | 50 | mΩ | ||
SW rise time 10% to 90% | VIN = 12 V | 2 | ns | |||
SW fall time 90% to 10% | VIN = 12 V | 2 | ns | |||
CURRENT LIMIT | ||||||
Peak Switch LSA Current Limit | ~15A Load Trip, R(ILIM) = Open | 12.7 | 16.3 | 19.9 | A | |
~11.25A Load Trip, R(ILIM) = 47 kΩ | 9.9 | 12.7 | 15.5 | |||
Peak Switch LSB Current Limit | ~15A Load Trip, R(ILIM) = Open | 6.8 | 8.7 | 10.6 | A | |
~11.25A Load Trip, R(ILIM) = 47 kΩ | 5.3 | 6.8 | 8.3 |
|||
Overcurrent protection scheme | Hiccup | |||||
OCP cycle count to trip fault | 3 | Cycles | ||||
Fault hiccup wait time | 10 MHz: 13.1 ms 7 MHz: 18.7 ms 4 MHz: 32.8 ms |
131,072 | Cycles | |||
INTERNAL REGULATOR (VG LDO) | ||||||
Output Voltage | 0 mA ≤ IVG ≤ 100 mA | 4.4 | 4.8 | 5 | V | |
Current Limit | 100 | 140 | mA | |||
Nominal Operating Current | Fosc = 10 MHz, ILOAD = 10A | 60 | mA | |||
DYNAMIC REGULATOR (VGA LDO) | ||||||
Output Voltage | 15 | V | ||||
VIN = 12 V | 10.5 | V | ||||
SERIES CAP MONITOR | ||||||
Low Voltage Fault Trip | 35 | 38 | %VIN | |||
Nominal Voltage | 50 | |||||
High Voltage Fault Trip | 62 | 65 | ||||
Capacitor Precharge Current | 5.5 | 10 | 14.5 | mA | ||
POWER GOOD | ||||||
VFB threshold | VFB falling (Fault), UVP | 90 | %VREF | |||
VFB rising (Good) | 95 | |||||
VFB rising (Fault), OVP | 110 | |||||
VFB falling (Good) | 105 | |||||
PGOOD sink current | V(PGOOD) = 0.4 V | 2.7 | mA | |||
PGOOD pin leakage current | VFB = VREF, V(PGOOD)= 5 V | 1 | μA | |||
Minimum VIN for valid PGOOD | V(PGOOD) ≤ 0.5 V at 100 µA | 1.2 | 2.75 | V | ||
THERMAL SHUTDOWN | ||||||
Thermal shutdown set threshold | 135 | °C | ||||
Thermal shutdown hysteresis | 20 | °C | ||||
Thermal shutdown hiccup time | 10 MHz: 13.1 ms 7 MHz: 18.7 ms 4 MHz: 32.8 ms |
131,072 | Cycles |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
ENABLE (EN PIN) | |||||
Enable to Start Switching time | 1 µF series cap, VIN = 12V | 625 | µs | ||
SYNC | |||||
Lock in time | 30 | µs | |||
HIGH-SIDE MOSFETS | |||||
SW minimum ON pulse width | 14 | ns | |||
SW minimum OFF pulse width | 10 | ns | |||
Non-Overlap Time between HS FET Off and LS FET On (deadtime) | Fsw = 5 MHz, VIN = 12 V | 3 | ns | ||
Non-Overlap Time between LS FET Off and HS FET On (deadtime) | 3 | ns |
EN = Threshold + 50 mV |
fsw = 2 MHz per phase | 3.2 x 2.5 x 1.2 mm inductors |
fsw = 2 MHz per phase | 3.2 x 2.5 x 1.2 mm inductors | No air flow |
1 Ω Load | fsw = 2 MHz per phase | |
40 ms/div |
5 Ω Load | fsw = 2 MHz per phase | 40 µs/div |
Series capacitance = 1 µF | fsw = 2 MHz per phase | |
2 ms/div |
75 Ω Load | 4 ms/div |
fsw = 2 MHz per phase | 2 µs/div |
fsw = 2 MHz per phase | 0 A load | 200 ns/div |
Room temperature | 10 A load | No air flow |
fsw = 2 MHz per phase | 3.2 x 2.5 x 1.2 mm inductors | Four layer board |
EN = 0 V |
EN = Threshold - 50 mV |
FB = 0.53 V (non-switching) |
fsw = 2 MHz per phase | External VG+ | 3.2 x 2.5 x 1.2 mm inductors |
Series capacitance = 1 µF | fsw = 2 MHz per phase | |
200 µs/div |
Series capacitance = 1 µF | fsw = 2 MHz per phase | |
200 µs/div |
0 A Load | fsw = 2 MHz per phase | 400 µs/div |
0.5 Ω Load | 20 µs/div |
4 ms/div |
3.2 MHz SYNC clock |