ZHCSCL9A July   2014  – September 2021 TPS55340-EP

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 说明（续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Switching Frequency
      2. 8.3.2  Voltage Reference and Setting Output Voltage
      3. 8.3.3  Soft Start
      4. 8.3.4  Slope Compensation
      5. 8.3.5  Overcurrent Protection and Frequency Foldback
      6. 8.3.6  Enable and Thermal Shutdown
      7. 8.3.7  Undervoltage Lockout (UVLO)
      8. 8.3.8  Minimum On-Time and Pulse Skipping
      9. 8.3.9  Layout Considerations
      10. 8.3.10 Thermal Considerations
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation With VIN < 2.9 V (Minimum VIN)
      2. 8.4.2 Synchronization
      3. 8.4.3 Oscillator
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Boost Converter Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1  Selecting the Switching Frequency (R4)
          2. 9.2.1.2.2  Determining the Duty Cycle
          3. 9.2.1.2.3  Selecting the Inductor (L1)
          4. 9.2.1.2.4  Computing the Maximum Output Current
          5. 9.2.1.2.5  Selecting the Output Capacitor (C8 to C10)
          6. 9.2.1.2.6  Selecting the Input Capacitors (C2, C7)
          7. 9.2.1.2.7  Setting Output Voltage (R1, R2)
          8. 9.2.1.2.8  Setting the Soft-Start Time (C7)
          9. 9.2.1.2.9  Selecting the Schottky Diode (D1)
          10. 9.2.1.2.10 Compensating the Control Loop (R3, C4, C5)
        3. 9.2.1.3 Application Curves
      2. 9.2.2 SEPIC Converter Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1  Selecting the Switching Frequency (R4)
          2. 9.2.2.2.2  Duty Cycle
          3. 9.2.2.2.3  Selecting the Inductor (L1)
          4. 9.2.2.2.4  Calculating the Maximum Output Current
          5. 9.2.2.2.5  Selecting the Output Capacitor (C8 to C10)
          6. 9.2.2.2.6  Selecting the Series Capacitor (C6)
          7. 9.2.2.2.7  Selecting the Input Capacitor (C2, C7)
          8. 9.2.2.2.8  Selecting the Schottky Diode (D1)
          9. 9.2.2.2.9  Setting the Output Voltage (R1, R2)
          10. 9.2.2.2.10 Setting the Soft-Start Time (C3)
          11. 9.2.2.2.11 MOSFET Rating Considerations
          12. 9.2.2.2.12 Compensating the Control Loop (R3, C4)
        3. 9.2.2.3 SEPIC Converter Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

Vin = 5 V, TJ = –55°C to 150°C, unless otherwise noted. Typical values are at TJ = 25°C.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SUPPLY CURRENT
VINInput voltage2.932V
IQOperating quiescent current into VinDevice nonswitching, VFB = 2 V0.5mA
ISDShutdown currentEN = GND2.710µA
VUVLOUndervoltage lockout thresholdVIN falling2.52.7V
VhysUndervoltage lockout hysteresis120140160mV
ENABLE AND REFERENCE CONTROL
VENEN threshold voltageEN rising input0.91.081.30V
VENhEN threshold hysteresis0.10.160.22V
RENEN pulldown resistor4009501600kΩ
ToffShutdown delay, SS dischargeEN high to low1.0ms
VSYNhSYN logic high voltage1.2
VSYNlSYN logic low voltage0.4V
VOLTAGE AND CURRENT CONTROL
VREFVoltage feedback regulation voltage1.2041.2291.254V
IFBVoltage feedback input bias current1.630nA
IsinkComp pin sink currentVFB = VREF + 200 mV, VCOMP = 1 V42µA
IsourceComp pin source currentVFB = VREF – 200 mV, VCOMP = 1 V42µA
VCCLPComp pin clamp voltageHigh Clamp, VFB = 1 V
Low Clamp, VFB = 1.5 V		3.1
0.75		V
VCTHComp pin thresholdDuty cycle = 0%1.04V
GeaError amplifier transconductance240360440µmho
ReaError amplifier output resistance10MΩ
ƒeaError amplifier crossover frequency500kHz
FREQUENCY
ƒSWFrequencyRFREQ = 480 kΩ7594130kHz
RFREQ = 80 kΩ460577740
RFREQ = 40 kΩ92011401480
DmaxMaximum duty cycleVFB = 1 V, RFREQ = 80 kΩ89%96%
VFREQFREQ pin voltage1.25V
Tmin_onMinimum on pulse widthRFREQ = 80 kΩ77ns
POWER SWITCH
RDS(ON)N-channel MOSFET on-resistanceVIN = 5 V
VIN = 3 V		60
70		110
120		mΩ
ILN_NFETN-channel leakage currentVDS = 25 V2.1µA
OCP and SS
ILIMN-channel MOSFET current limitD = Dmax5.256.68.25A
ISSSoft-start bias currentVss = 0 V6µA
THERMAL SHUTDOWN
TshutdownThermal shutdown threshold165°C
ThysteresisThermal shutdown threshold hysteresis15°C
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