ZHCSCK0C June 2014 – September 2021 TPS55340-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
VI | Input voltage range | 2.9 | 38 | V | ||
IQ | Operating quiescent current into VIN | Device nonswitching, V(FB) = 2 V | 0.5 | mA | ||
IL(sd) | Shutdown current | EN = GND | 2.7 | 10 | µA | |
V(UVLO) | Undervoltage lockout threshold | VI(f) | 2.5 | 2.7 | V | |
Vhys | Undervoltage lockout hysteresis | 120 | 140 | 160 | mV | |
ENABLE AND REFERENCE CONTROL | ||||||
V(EN)(r) | EN threshold voltage | EN rising input | 0.9 | 1.08 | 1.3 | V |
V(EN)(f) | EN threshold voltage | EN falling input | 0.74 | 0.92 | 1.125 | V |
V(EN)(hys) | EN threshold hysteresis | 0.16 | V | |||
R(EN) | EN pulldown resistor | 400 | 950 | 1600 | kΩ | |
toff | Shutdown delay, SS discharge | EN high to low | 1 | ms | ||
V(SYNC)H | SYN logic high voltage | 1.2 | ||||
V(SYNC)L | SYN logic low voltage | 0.4 | V | |||
VOLTAGE AND CURRENT CONTROL | ||||||
Vref | Voltage feedback regulation voltage | 1.204 | 1.229 | 1.254 | V | |
TA = 25°C | 1.22 | 1.229 | 1.238 | |||
IIB(FB) | Voltage feedback input bias current | TA = 25°C | 1.6 | 20 | nA | |
I(COMP_sink) | COMP pin sink current | V(FB) = Vref + 200 mV, V(COMP) = 1 V | 42 | µA | ||
IS(COMP) | COMP pin source current | V(FB) = Vref – 200 mV, V(COMP) = 1 V | 42 | µA | ||
VC(COMP) | COMP pin clamp voltage | High clamp, V(FB) = 1 V | 3.1 | V | ||
Low clamp, V(FB) = 1.5 V | 0.75 | |||||
V(COMP_th) | COMP pin threshold | Duty cycle = 0% | 1.04 | V | ||
gm(ea) | Error amplifier transconductance | 240 | 360 | 440 | µmho | |
RO(ea) | Error amplifier output resistance | 10 | MΩ | |||
ƒ(ea) | Error amplifier crossover frequency | 500 | kHz | |||
FREQUENCY | ||||||
ƒ | Frequency | R(FREQ) = 480 kΩ | 75 | 94 | 130 | kHz |
R(FREQ) = 80 kΩ | 460 | 577 | 740 | |||
R(FREQ) = 40 kΩ | 920 | 1140 | 1480 | |||
R(FREQ) = 18 kΩ | 2261 | 2549 | 2837 | |||
Dmax | Maximum duty cycle | V(FB) = 1 V, R(FREQ) = 80 kΩ | 89% | 96% | ||
V(FREQ) | FREQ pin voltage | 1.25 | V | |||
tW(on)min | Minimum on pulse width | R(FREQ) = 80 kΩ | 77 | 107 | ns | |
POWER SWITCH | ||||||
rDS(on) | N-channel MOSFET on-resistance | VI = 5 V | 60 | 110 | mΩ | |
VI = 3 V | 70 | 120 | ||||
ILN_NFET | N-channel leakage current | VDS = 25 V, TA = 25°C | 2.1 | µA | ||
OCP AND SS | ||||||
ILIM | N-channel MOSFET current limit | D = Dmax | 5.25 | 6.6 | 7.75 | A |
IB(SS) | Soft-start bias current | V(SS) = 0 V | 6 | µA | ||
THERMAL SHUTDOWN | ||||||
Tsd | Thermal shutdown threshold | 165 | °C | |||
Thys | Thermal shutdown threshold hysteresis | 15 | °C |