米6体育平台手机版

ZHCSI48B September 2017 – June 2018 TPS560430

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DBV|6

散热焊盘机械数据 (封装 | 引脚)

订购信息

7.5 Electrical Characteristics

Limits apply over the recommended operating junction temperature (T_J ) range of –40°C to +125°C, unless otherwise stated. Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at T_J = 25 °C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: V_IN = 4 V to 36 V.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN PIN)
V_IN	Operation input voltage		4		36	V
V_{IN_UVLO}	Undervoltage lockout thresholds	Rising threshold	3.55	3.75	4.00	V
		Falling threshold	3.25	3.45	3.65
		Hysteresis		0.3
I_Q	Operating quiescent current (non-switching)	PFM version, V_EN = 3.3 V, V_FB = 1.1V		80	120	µA
I_SHDN	Shutdown current	V_EN = 0 V		3	10	µA
ENABLE (EN PIN)
V_{EN_H}	Enable rising threshold voltage		1.1	1.23	1.36	V
V_{EN_L}	Enable falling threshold voltage		0.95	1.1	1.22	V
V_{EN_HYS}	Enable hysteresis voltage			0.13		V
I_EN	Leakage current at EN pin	V_EN = 3.3 V		10	200	nA
VOLTAGE REFERENCE (FB PIN)
V_REF	Reference voltage	T_J = 25 °C	0.995	1.00	1.005	V
		T_J = –40 °C to 125 °C	0.985	1.00	1.015	V
		Fixed 3.3-V output, T_J = 25 °C	3.28	3.3	3.32	V
		Fixed 3.3-V output, T_J = –10 °C to 85 °C	3.272	3.3	3.328	V
		Fixed 3.3-V output, T_J = –40 °C to 125 °C	3.25	3.3	3.35	V
I_FB	Leakage current at FB pin	V_FB = 1.2 V		0.2	50	nA
I_FB	Leakage current at FB pin	Fixed 3.3-V output, V_FB = 3.96 V		1.7		µA
CURRENT LIMITS AND HICCUP
I_{HS_LIMIT}	Peak inductor current limit		0.8	1.1	1.4	A
I_{LS_LIMIT}	Valley inductor current limit		0.62	0.8	0.98	A
I_{LS_ZC}	Zero cross current (PFM version)			20		mA
I_{LS_NEG}	Negative current limit (FPWM version)		-0.7	-0.5	-0.3	A
V_HICCUP	Hiccup threshold of FB pin	% of reference voltage		40%
INTEGRATED MOSFETS
R_{DS_ON_HS}	High-side MOSFET ON-resistance	T_J = 25 °C, V_IN = 12 V		450		mΩ
R_{DS_ON_LS}	Low-side MOSFET ON-resistance	T_J = 25 °C, V_IN = 12 V		240		mΩ
THERMAL SHUTDOWN⁽¹⁾
T_SHDN	Thermal shutdown threshold			170		°C
T_HYS	Hysteresis			12		°C

(1) Guaranteed by design.