SLUSAH4D MARCH 2011 – February 2016 TPS56121
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Voltage | VDD, VIN | –0.3 | 16.5 | V | |
SW | –3 | 25 | |||
SW (< 100 ns pulse width, 10 µJ) | -5 | ||||
BOOT | –0.3 | 30 | |||
BOOT-SW (differential from BOOT to SW) | –0.3 | 7 | |||
COMP, PGOOD, FB, BP, EN/SS, ILIM | –0.3 | 7 | |||
Temperature | Junction, TJ | –40 | 150 | °C | |
Storage, Tstg | –55 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VDD | VIN Input voltage | 4.5 | 14 | V | |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS56121 | UNIT | |
---|---|---|---|
DQP | |||
22 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 34.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 22.9 | |
ψJT | Junction-to-top characterization parameter | 0.6 | |
ψJB | Junction-to-board characterization parameter | 5.0 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 0.3 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VOLTAGE REFERENCE | |||||||
VFB | FB input voltage | TJ = 25°C, 4.5 V ≤ VVDD ≤ 14 V | 597 | 600 | 603 | mV | |
–40°C ≤ TJ ≤ 125°C, 4.5 V ≤ VVDD ≤ 14 V |
594 | 600 | 606 | ||||
INPUT SUPPLY | |||||||
VVDD | Input supply voltage range | 4.5 | 14 | V | |||
IVDDSD | Shutdown supply current | VEN/SS = 0.2 V | 80 | 120 | µA | ||
IVDDQ | Quiescent, non-switching | Let EN/SS float, VFB = 1 V | 2.5 | 5.0 | mA | ||
VUVLO | UVLO ON Voltage | 4.0 | 4.3 | V | |||
VUVLO(HYS) | UVLO hysteresis | 500 | 700 | mV | |||
ENABLE/SOFT-START | |||||||
VIH | High-level input voltage, EN/SS | 0.55 | 0.70 | 1.00 | V | ||
VIL | Low-level input voltage, EN/SS | 0.27 | 0.30 | 0.33 | V | ||
ISS | Soft-start source current | 8 | 10 | 12 | µA | ||
VSS | Soft-start voltage level – Start of ramp | 0.4 | 0.8 | 1.3 | V | ||
BP REGULATOR | |||||||
VBP | Output voltage | IBP = 10 mA | 6.2 | 6.5 | 6.8 | V | |
VDO | Regulator dropout voltage, VVDD – VBP | IBP = 25 mA, VVDD = 4.5 V | 70 | 125 | mV | ||
OSCILLATOR | |||||||
fSW | Switching Frequency | RCOMP = 40.2 kΩ, 4.5 V ≤ VVDD ≤ 14 V | 270 | 300 | 330 | kHz | |
RCOMP = open, 4.5 V ≤ VVDD ≤ 14 V | 450 | 500 | 550 | kHz | |||
RCOMP = 13.3 kΩ, 4.5 V ≤ VVDD ≤ 14 V | 0.8 | 0.95 | 1.1 | MHz | |||
VRAMP(1) | Ramp amplitude | VVDD/6.6 | VVDD/6 | VVDD/5.4 | V | ||
PWM | |||||||
DMAX (1) | Maximum duty cycle | fsw = 300 kHz, VFB = 0 V, 4.5 V ≤ VVDD ≤ 14 V |
93% | ||||
fsw = 500 kHz, VFB = 0 V, 4.5 V ≤ VVDD ≤ 14 V |
90% | ||||||
fsw = 1 MHz, VFB = 0 V, 4.5 V ≤ VVDD ≤ 14 V |
85% | ||||||
tON(min) (1) | Minimum controllable pulse width | 100 | ns | ||||
ERROR AMPLIFIER | |||||||
GBWP (1) | Gain bandwidth product | 10 | 24 | MHz | |||
AOL (1) | Open loop gain | 60 | dB | ||||
IIB | Input bias current (current out of FB pin) | VFB = 0.6 V | 75 | nA | |||
IEAOP | Output source current | VFB = 0 V | 1.5 | mA | |||
IEAOM | Output sink current | VFB = 1 V | 1.5 | mA | |||
POWER GOOD | |||||||
VOV | Feedback upper voltage limit for PGOOD | 655 | 675 | 700 | mV | ||
VUV | Feedback lower voltage limit for PGOOD | 500 | 525 | 550 | |||
VPGD-HYST | PGOOD hysteresis voltage at FB | 30 | 45 | ||||
RPGD | PGOOD pull down resistance | VFB = 0 V, IFB = 5 mA | 30 | 70 | Ω | ||
IPGDLK | PGOOD leakage current | 550 mV < VFB < 655 mV, VPGOOD = 5 V |
10 | 20 | µA | ||
OUTPUT STAGE | |||||||
RHI | High-side device resistance | TJ = 25°C, (VBOOT – VSW) = 5.5 V | 4.5 | 6.5 | mΩ | ||
RLO | Low side device resistance | TJ = 25°C | 1.9 | 2.7 | |||
OVERCURRENT PROTECTION (OCP) | |||||||
tPSSC(min) (1) | Minimum pulse time during short circuit | 250 | ns | ||||
tBLNKH (1) | Switch leading-edge blanking pulse time (high-side detection) | 150 | |||||
IOCH | OC threshold for high-side FET | TJ = 25°C, (VBOOT – VSW) = 5.5 V | 27 | 34 | 39 | A | |
IILIM | ILIM current source | TJ = 25°C | 10.0 | µA | |||
VOCLPRO(1) | Programmable OC range for low side FET | TJ = 25°C | 12 | 100 | mV | ||
tOFF | OC retry cycles on EN/SS pin | 4 | Cycle | ||||
BOOT DIODE | |||||||
VDFWD | Bootstrap diode forward voltage | IBOOT = 5 mA | 0.8 | V | |||
THERMAL SHUTDOWN | |||||||
TJSD (1) | Junction shutdown temperature | 145 | ºC | ||||
TJSDH (1) | Hysteresis | 20 | ºC |