ZHCSNA3 October 2021 TPS562212
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| VIN | Operation input voltage | 4.2 | 18 | V | ||
| IQ(VIN) | VIN quiescent current at power save mode | Nonswitching, VEN = 1.2 V, VFB = 0.65 V, IOUT = 0 mA | 120 | µA | ||
| VIN quiescent current at FCCM | Nonswitching, VEN = 1.2 V, VFB = 0.65 V, IOUT = 0 mA | 450 | µA | |||
| ISD(VIN) | VIN shutdown supply current | VIN = 12 V, VEN = 0 V | 3 | 10 | µA | |
| UVLO | ||||||
| VUVLO(R) | VIN UVLO rising threshold | VIN rising | 3.8 | 4 | 4.2 | V |
| VUVLO(F) | VIN UVLO falling threshold | VIN falling | 3.4 | 3.6 | 3.8 | V |
| ENABLE | ||||||
| VEN(R) | EN voltage rising threshold | EN rising, enable switching | 1.05 | 1.15 | 1.25 | V |
| VEN(F) | EN voltage falling threshold | EN falling, disable switching | 0.91 | 1.01 | 1.10 | V |
| IEN(P1) | EN pin sourcing current pre EN rising threshold | VEN = 1.0 V | 0.93 | 1.2 | 1.5 | µA |
| IEN(H) | EN pin sourcing current hysteresis | 2.4 | 3.1 | 3.81 | µA | |
| REFERENCE VOLTAGE | ||||||
| VFB | FB voltage | TJ = 25°C | 0.594 | 0.6 | 0.606 | V |
| TJ = –40°C to 125°C, VIN = 12 V | 0.591 | 0.6 | 0.609 | V | ||
| IFB(LKG) | FB input leakage current | VFB = 0.65 V, TJ = 25°C | –0.1 | 0 | 0.1 | µA |
| STARTUP | ||||||
| ISS | Soft-start charge current | VSS = 0 V | 4.5 | 6.6 | 8.3 | µA |
| tSS | Internal fixed soft-start time | From first switching pulse until target VOUT | 1.5 | 2 | 2.6 | ms |
| SWITCHING FREQUENCY | ||||||
| fSW(FCCM) | Switching frequency, FCCM operation | 1100 | 1200 | 1300 | kHz | |
| POWER STAGE | ||||||
| RDSON(HS) | High-side MOSFET on-resistance | TJ = 25°C, VIN = 12 V, VBOOT-SW = 5 V | 66 | mΩ | ||
| RDSON(LS) | Low-side MOSFET on-resistance | TJ = 25°C, VIN = 12 V | 33 | mΩ | ||
| tON(min)(1) | Minimum ON pulse width | 45 | ns | |||
| tON(max) | Maximum ON pulse width | 6 | µs | |||
| tOFF(min) | Minimum OFF pulse width | 105 | ns | |||
| OVERCURRENT PROTECTION | ||||||
| IHS(OC) | High-side peak current limit | Peak current limit on the HS MOSFET | 3.05 | 3.5 | 4.1 | A |
| ILS(OC) | Low-side valley current limit | Valley current limit on the LS MOSFET, VIN = 12 V | 1.9 | 2.6 | 3.15 | A |
| ILS(NOC) | Low-side negative current limit for FCCM | Sinking current limit on LS MOSFET, VIN = 12 V | 0.6 | 1 | 1.5 | A |
| tHIC(WAIT) | Wait time before entering hiccup | 108 | µs | |||
| tHIC(RE) | Hiccup time before re-start | 6 | Cycles | |||
| OUTPUT OVP AND UVP | ||||||
| VUVP | Undervoltage-protection (UVP) threshold voltage | VFB falling | 62.5% | |||
| UVP Hysteresis | 5% | |||||
| VOVP | Overvoltage-protection (OVP) threshold voltage | VFB rising | 107% | 112% | 114% | |
| OVP hysteresis | 5% | |||||
| POWER GOOD | ||||||
| VPGTH | Power-good threshold | FB falling, PG from high to low | 82% | 87% | 92% | |
| FB rising, PG from low to high | 87% | 92% | 97% | |||
| FB falling, PG from low to high | 101% | 107% | 112% | |||
| FB rising, PG from high to low | 107% | 112% | 114% | |||
| VPG(OL) | PG pin output low-level voltage | IPG = 0.7 mA | 0.3 | V | ||
| IPG(LKG) | PG pin leakage current when the open-drain output is high | VPG = 5.5 V | –1 | 1 | µA | |
| tPG(R) | PG delay going from low to high | 112 | µs | |||
| tPG(F) | PG delay going from high to low | 48 | µs | |||
| Minimum VIN for valid output(1) | VPG/SS < 0.5 V at 100 μA | 2 | 2.5 | V | ||
| THERMAL SHUTDOWN | ||||||
| TJ(SD)(1) | Thermal shutdown threshold | 150 | °C | |||
| TJ(HYS)(1) | Thermal shutdown hysteresis | 20 | °C | |||