ZHCSF10B May 2016 – August 2017 TPS564201
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage | VIN, EN | –0.3 | 19 | V |
VBST | –0.3 | 25 | V | |
VBST (10 ns transient) | –0.3 | 27 | V | |
VBST (vs SW) | –0.3 | 6.5 | V | |
VFB | –0.3 | 6.5 | V | |
SW | –2 | 19 | V | |
SW (10 ns transient) | –3.5 | 21 | V | |
Operating junction temperature, TJ | –40 | 150 | °C | |
Storage temperature, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VIN | Supply input voltage range | 4.5 | 17 | V | ||
VI | Input voltage range | VBST | –0.1 | 23 | V | |
VBST (10 ns transient) | –0.1 | 26 | ||||
VBST (vs SW) | –0.1 | 6.0 | ||||
EN | –0.1 | 17 | ||||
VFB | –0.1 | 5.5 | ||||
SW | –1.8 | 17 | ||||
SW (10 ns transient) | –3.5 | 20 | ||||
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS564201 | UNIT | |
---|---|---|---|
DDC (SOT) | |||
6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 86.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 39.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 13.3 | °C/W |
ψJT | Junction-to-top characterization parameter | 1.8 | °C/W |
ψJB | Junction-to-board characterization parameter | 13.3 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY CURRENT | |||||||
IVIN | Operating – non-switching supply current | VIN current, EN = 5 V, VFB = 1 V | TPS564201 | 400 | 510 | µA | |
IVINSDN | Shutdown supply current | VIN current, EN = 0 V | 0.9 | 5 | µA | ||
LOGIC THRESHOLD | |||||||
VENH | EN high-level input voltage | EN | 1.6 | V | |||
VENL | EN low-level input voltage | EN | 0.8 | V | |||
REN | EN pin resistance to GND | VEN = 12 V | 225 | 425 | 900 | kΩ | |
VFB VOLTAGE AND DISCHARGE RESISTANCE | |||||||
VFBTH | VFB threshold voltage | VO = 1.05 V, continuous mode operation | 745 | 760 | 775 | mV | |
IVFB | VFB input current | VFB = 0.8 V | 0 | ±0.1 | µA | ||
MOSFET | |||||||
RDS(on)h | High-side switch resistance | TA = 25°C, VBST – SW = 5.5 V | 50 | mΩ | |||
RDS(on)l | Low-side switch resistance | TA = 25°C | 22 | mΩ | |||
CURRENT LIMIT | |||||||
Iocl | Current limit(1) | DC current, VOUT = 1.05 V, L1 = 1.5 µH | 4.2 | 6 | 7.7 | A | |
THERMAL SHUTDOWN | |||||||
TSDN | Thermal shutdown threshold(1) | Shutdown temperature | 172 | °C | |||
Hysteresis | 38 | ||||||
ON-TIME TIMER CONTROL | |||||||
tOFF(MIN) | Minimum off time | VFB = 0.68 V | 220 | 280 | ns | ||
SOFT START | |||||||
tSS | Soft-start time | Internal soft-start time | 1.0 | ms | |||
FREQUENCY | |||||||
Fsw | Switching frequency | VIN = 12 V, VO = 1.05 V, FCCM mode | 560 | kHz | |||
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION | |||||||
VUVP | Output UVP threshold | Hiccup detect (H > L) | 65% | ||||
THICCUP_WAIT | Hiccup on time | 1.9 | ms | ||||
THICCUP_RE | Hiccup time before restart | 15.5 | ms | ||||
UVLO | |||||||
UVLO | UVLO threshold | Wake up VIN voltage | 4.0 | 4.3 | V | ||
Shutdown VIN voltage | 3.3 | 3.6 | |||||
Hysteresis VIN voltage(1) | 0.4 |
VOUT = 1.05 V | L = 2.2 µH |
VOUT = 1.8 V | L = 2.2 µH |
VOUT = 5 V | L = 3.3 µH |
VOUT = 1.5 V | L = 2.2 µH |
VOUT = 3.3 V | L = 2.2 µH |