米6体育平台手机版

ZHCSLD3B May 2020 – December 2023 TPS566231 , TPS566238

PRODUCTION DATA

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机械数据 (封装 | 引脚)

RQF|9
- MPQF566

散热焊盘机械数据 (封装 | 引脚)

订购信息

5.5 Electrical Characteristics

T_J = -40^oC to 125^oC, V_IN=12 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT SUPPLY VOLTAGE
VIN	Input voltage range	VIN	3		18	V
I_VIN	VIN supply current	No load, V_EN = 5V, non-switching (TPS566231/1P)	25	50	75	µA
I_VIN	VIN supply current	No load, V_EN = 5V, non-switching (TPS566238/8P)	275	375	475	µA
I_INSDN	VIN shutdown current	No load, V_EN = 0V		3.2	5	µA
UVLO
V_UVLOVIN	VIN UVLO threshold	Wake up VIN voltage	2.62	2.74	2.86	V
		Shut down VIN voltage	2.44	2.54	2.64	V
		Hysteresis VIN voltage		200		mV
VCC OUTPUT
V_CC	VCC output voltage	V_IN = 12V	4.7	5	5.2	V
V_CC	VCC output voltage	V_IN = 3V		3		V
I_CC	VCC current limit	V_IN=12V	20			mA
I_CC	VCC current limit	V_IN = 3V	5			mA
FEEDBACK VOLTAGE
V_FB	FB voltage	T_J = 25°C	594	600	606	mV
V_FB	FB voltage	T_J = –40°C to 125°C	591	600	609	mV
MOSFET
R_{DS (ON)HI}	High-side MOSFET Rds(on)	T_J = 25°C, V_IN ≥ 5V		20.8		mΩ
R_{DS (ON)HI}	High-side MOSFET Rds(on)	T_J = 25°C, V_IN = 3V		25.8		mΩ
R_{DS (ON)LO}	Low-side MOSFET Rds(on)	T_J = 25°C,V_IN ≥ 5V		10.6		mΩ
R_{DS (ON)LO}	Low-side MOSFET Rds(on)	T_J = 25°C, V_IN = 3V		13		mΩ
I_OCL	Over current threshold	Valley current set point	6.1	7.4	8.9	A
I_NOCL	Negative over current threshold		2	3.4	5.3	A
DUTY CYCLE and FREQUENCY CONTROL
F_SW	Switching frequency	T_J = 25°C, V_VOUT = 1.0V		600		kHz
T_ON(MIN)	Minimum on-time⁽¹⁾	T_J = 25°C		50	90	ns
T_OFF(MIN)	Minimum off-time⁽¹⁾	V_FB = 0.5V		100		ns
LOGIC THRESHOLD
V_EN(ON)	EN threshold high-level		1.13	1.19	1.25	V
V_EN(OFF)	EN threshold low-level		1.01	1.08	1.16	V
V_ENHYS	EN hysteresis			110		mV
I_EN	EN pullup current	V_EN = 1.0V		2		uA
OUTPUT DISCHARGE and SOFT START
R_DIS	Discharge resistance	T_J = 25°C, V_VOUT = 0.5V, V_EN = 0V		114		Ω
I_SS	Soft-start charge current	TPS566231/TPS566238	5	6.5	8.5	uA
T_SS	Internal soft-start time	TPS566231P/TPS566238P	0.93	1.9	2.9	ms
POWER GOOD (TPS566231P/TPS566238P)
T_PGDLY	PG start-up delay	PG from low-to-high		1		ms
T_PGDLY	PG start-up delay	PG from high-to-low		32		us
V_PGTH	PG threshold	VFB falling (fault)	80	85	90	%
		VFB rising(good)	85	90	95	%
		VFB rising (fault)	110	115	120	%
		VFB falling (good)	105	110	115	%
V_{PG_L}	PG sink current capability	I_OL = 4mA			0.4	V
I_PGLK	PG leak current	V_PGOOD = 5.5V			1	uA
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
V_OVP	OVP trip threshold		110	115	120	%
t_OVPDLY	OVP prop deglitch	T_J = 25°C		32		us
V_UVP	UVP trip threshold		55	60	65	%
t_UVPDLY	UVP prop deglitch			256		us
t_UVPDEL	Output hiccup delay relative to SS time	UVP detect		256		us
t_UVPEN	Output hiccup enable delay relative to SS time	UVP detect (TPS566231/TPS566238)		7		cycles
t_UVPEN	Output hiccup enable delay relative to SS time	UVP detect (TPS566231P/TPS566238P)		19		ms
THERMAL PROTECTION
T_OTP	OTP trip threshold⁽¹⁾			160		°C
T_OTPHSY	OTP hysteresis⁽¹⁾			25		°C

(1) No production test, specified by design.