ZHCSIH1A July 2018 – September 2019 TPS56637
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
IQ | Quiescent current, Operating at ULQ mode(1) | 140 | µA | |||
ISD | Shutdown supply current | TJ=25°C, VEN=0 V | 2 | µA | ||
UVLO | ||||||
UVLO | VIN Under-Voltage Lockout | Wake up VIN voltage | 4.0 | 4.2 | 4.4 | V |
Shut down VIN voltage | 3.6 | 3.7 | 3.8 | V | ||
Hysteresis VIN voltage | 500 | mV | ||||
ENABLE(EN PIN) | ||||||
IEN_INPUT | Input current | VEN = 1.1V | 1 | µA | ||
IEN_HYS | Hysteresis current | VEN = 1.3V | 4 | µA | ||
VEN(ON) | Enable threshold | EN rising | 1.18 | 1.26 | V | |
VEN(OFF) | EN failling | 1.04 | 1.12 | V | ||
FEEDBACK VOLTAGE | ||||||
VFB | Feedback voltage | VOUT = 5V, continuous mode operation, TJ=25°C | 0.594 | 0.6 | 0.606 | V |
VOUT = 5V, continuous mode operation, TJ=-40°C to 150°C | 0.591 | 0.6 | 0.609 | V | ||
MOSFET | ||||||
RDS(on)h | High side switch resistance | TJ = 25°C, VBST - VSW = 5 V | 26 | mΩ | ||
RDS(on)l | Low side switch resistance | TJ = 25°C | 12 | mΩ | ||
CURRENT LIMIT | ||||||
IOCL | Valley current limit | 6.3 | 7.5 | 8.6 | A | |
IOC_REV | Reverse current limit for FCCM Mode | 2.3 | 3 | 3.7 | A | |
POWER GOOD | ||||||
VPGTH | PG lower threshold - falling | % of VFB | 85% | |||
PG lower threshold - rising | % of VFB | 90% | ||||
PG upper threshold - falling | % of VFB | 110% | ||||
PG upper threshold - rising | % of VFB | 115% | ||||
IPGSINK | PG sink current | VFB = 0.5V, VPG = 0.5V | 1.5 | mA | ||
IPGLK | PG leakage current | VPG = 5.5V | -1 | 1 | µA | |
FREQUENCY | ||||||
FSW | Switching frequency | VOUT =5V, continuous mode operation | 500 | kHz | ||
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION | ||||||
VOVP | Output OVP threshold | OVP detect(L>H) | 125% | |||
Hysteresis | 5% | |||||
VUVP | Output UVP threshold | Hiccup detect(H>L) | 65% | |||
Hysteresis | 5% | |||||
THERMAL SHUTDOWN | ||||||
TSDN | Thermal shutdown threshold(2) | Temperature Rising | 165 | °C | ||
Hysteresis | 30 | °C | ||||
SW DISCHARGE RESISTANCE | ||||||
RDISCHG | VOUT discharge resistance | VEN=0, VSW=0.5V, TJ=25°C | 200 | Ω |