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SLVSAP1E December 2010 – March 2015 TPS57160-Q1

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DGQ|10
- MPDS043F
DRC|10
- MPDS117L

散热焊盘机械数据 (封装 | 引脚)

DGQ|10
- PPTD325B
DRC|10
- QFND013N

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
Input voltage, V_IN	VIN		–0.3	65	V
	EN⁽²⁾		–0.3	5
	BOOT			73
	VSENSE		–0.3	3
	COMP		–0.3	3
	PWRGD		–0.3	6
	SS/TR		–0.3	3
	RT/CLK		–0.3	3.6
Output voltage, V_OUT	BOOT to PH			8	V
	PH		–0.6	65
		200 ns	–1	65
		30 ns	–2	65
		Maximum dc voltage, T_J = –40°C		–0.85
Differential voltage, V_DIFF	PAD to GND			±200	mV
Source current, I_SOURCE	EN			100	μA
	BOOT			100	mA
	VSENSE			10	μA
	PH		Current Limit
	RT/CLK			100	μA
Sink current, I_SINK	VIN		Current Limit
	COMP			100	μA
	PWRGD			10	mA
	SS/TR			200	μA
Operating junction temperature, T_J			–40	150	°C
Storage temperature, T_stg			–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure beyond absolute maximum rated conditions for extended periods may affect device reliability.

(2) See the Enable and Adjusting Undervoltage Lockout section for details.

6.2 ESD Ratings

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾		±2000	V
		Charged-device model (CDM), per AEC Q100-011	All pins	±500
		Charged-device model (CDM), per AEC Q100-011	Corner pins (1, 5, 6, and 10)	±750

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
T_A	Operating ambient temperature	–40		125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾⁽²⁾		DGQ (MSOP-PowerPAD)	DRC (VSON)	UNIT
THERMAL METRIC⁽¹⁾⁽²⁾		10 PINS	10 PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance (standard board)	67.4	45.2	°C/W
R_θJA	Junction-to-ambient thermal resistance (custom board)⁽³⁾	—	61.5
R_θJC(top)	Junction-to-case (top) thermal resistance	46.7	52.1
R_θJB	Junction-to-board thermal resistance	38.4	20.6
ψ_JT	Junction-to-top characterization parameter	1.9	0.9
ψ_JB	Junction-to-board characterization parameter	38.1	20.8
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	15.9	5.2

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2) Power rating at a specific ambient temperature T_A should be determined with a junction temperature of 150°C. This is the point where distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information.

(3) Test boards conditions:

3 inches x 3 inches, 2 layers, thickness: 0.062 inch
2 oz. copper traces located on the top of the PCB
2 oz. copper ground plane, bottom layer
6 thermal vias (13mil) located under the device package

6.5 Electrical Characteristics

T_J = –40°C to 150°C, VIN = 3.5 V to 60 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY VOLTAGE (VIN PIN)
	Operating input voltage		3.5		60	V
	Internal undervoltage lockout threshold	No voltage hysteresis, rising and falling		2.5		V
	Shutdown supply current	EN = 0 V, 25°C, 3.5 V ≤ V_IN ≤ 60 V		1.5	4	μA
	Shutdown supply current	EN = 0 V, 125°C, 3.5 V ≤ V_IN ≤ 60 V		1.9	6.5
	Operating nonswitching supply current	VSENSE = 0.83 V, VIN = 12 V, T_J = 25°C		116	136
ENABLE AND UVLO (EN PIN)
	Enable threshold voltage	No voltage hysteresis, rising and falling, T_J = 25°C	1.15	1.25	1.36	V
	Input current	Enable threshold +50 mV		–3.8		μA
	Input current	Enable threshold –50 mV		–0.9		μA
	Hysteresis current			–2.9		μA
VOLTAGE REFERENCE
	Voltage reference		0.792	0.8	0.808	V
HIGH-SIDE MOSFET
	On-resistance	VIN = 3.5 V, BOOT-PH = 3 V		300		mΩ
	On-resistance	VIN = 12 V, BOOT-PH = 6 V		200	410	mΩ
ERROR AMPLIFIER
	Input current			50		nA
	Error amplifier transconductance (g_M)	–2 μA < I_COMP < 2 μA, V_COMP = 1 V		97		μMhos
	Error amplifier transconductance (g_M) during slow start	–2 μA < I_COMP < 2 μA, V_COMP = 1 V, V_VSENSE = 0.4 V		26		μMhos
	Error amplifier dc gain	V_VSENSE = 0.8 V		10,000		V/V
	Error amplifier bandwidth			2700		kHz
	Error amplifier source/sink	V_(COMP) = 1 V, 100-mV overdrive		±7		μA
	COMP to switch current transconductance			6		A/V
CURRENT LIMIT
	Current limit threshold	VIN = 12 V, T_J = 25°C	1.8	2.7		A
THERMAL SHUTDOWN
	Thermal shutdown			182		°C
TIMING RESISTOR AND EXTERNAL CLOCK (RT/CLK PIN)
	Switching frequency range using RT mode	VIN = 12 V	100		2500	kHz
f_SW	Switching frequency	VIN = 12 V, R_T = 200 kΩ	450	581	720	kHz
	Switching frequency range using CLK mode	VIN = 12 V	300		2200	kHz
	Minimum CLK input pulse width			40		ns
	RT/CLK high threshold	VIN = 12 V		1.9	2.2	V
	RT/CLK low threshold	VIN = 12 V	0.45	0.7		V
	RT/CLK falling edge to PH rising edge delay	Measured at 500 kHz with RT resistor in series		60		ns
	PLL lock in time	Measured at 500 kHz		100		μs
SLOW START AND TRACKING (SS/TR)
	Charge current	V_SS/TR = 0.4 V		2		μA
	SS/TR-to-VSENSE matching	V_SS/TR = 0.4 V		45		mV
	SS/TR-to-reference crossover	98% nominal		1		V
	SS/TR discharge current (overload)	VSENSE = 0 V, V(SS/TR) = 0.4 V		112		μA
	SS/TR discharge voltage	VSENSE = 0 V		54		mV
POWER-GOOD (PWRGD PIN)
V_VSENSE	VSENSE threshold	VSENSE falling (Fault)		92%
		VSENSE rising (Good)		94%
		VSENSE rising (Fault)		109%
		VSENSE falling (Good)		107%
	Hysteresis	VSENSE falling		2%
	Output high leakage	VSENSE = VREF, V(PWRGD) = 5.5 V, T_J = 25°C		10		nA
	On resistance	I(PWRGD) = 3 mA, VSENSE < 0.79 V		50		Ω
	Minimum VIN for defined output	V(PWRGD) < 0.5 V, II(PWRGD) = 100 μA		0.95	1.5	V