SLVS273A February 2000 – November 2015 TPS60140 , TPS60141
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Description (continued)
- 6 Device Comparison Table
- 7 Pin Configuration and Functions
- 8 Specifications
- 9 Detailed Description
- 10Application and Implementation
- 11Power Supply Recommendations
- 12Layout
- 13Device and Documentation Support
- 14Mechanical, Packaging, and Orderable Information
8 Specifications
8.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)(2)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Supply voltage at IN to GND and PGND | −0.3 | 3.6 | V | |
| Voltage at OUT, ENABLE, LBI, LBO, PG, FB to GND and PGND | −0.3 | 5.4 | V | |
| Voltage at C1+ to GND | −0.3 | VOUT + 0.3 | V | |
| Voltage at C1– to GND | −0.3 | VIN + 0.3 | V | |
| Voltage at C2+ to GND | −0.3 | VOUT + 0.3 | V | |
| Voltage at C2– to GND | −0.3 | VIN + 0.3 | V | |
| Continuous output current | 150 | mA | ||
| TJ | Maximum junction temperature | 150 | °C | |
| Tstg | Storage temperature | –55 | 150 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) V(ENABLE), V(LBI), V(LBO), and V(PG) can exceed VIN up to the maximum rated voltage without increasing the leakage current drawn by these inputs.
8.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
8.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIN | Input voltage | 1.8 | 3.6 | V | |
| IOmax | Continuous output current | 100 | mA | ||
| TJ | Operating junction temperature | 125 | °C | ||
8.4 Thermal Information
| THERMAL METRIC(1) | TPS60140, TPS60141 | UNIT | |
|---|---|---|---|
| PWP (HTSSOP) | |||
| 20 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 42 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 23 | °C/W |
| RθJB | Junction-to-board thermal resistance | 20 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.6 | °C/W |
| ψJB | Junction-to-board characterization parameter | 20 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 1.6 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
8.5 Electrical Characteristics
CIN = 4.7 µF, C1 = C2 = 2.2 µF, COUT = 10 µF(1) at TC = −40°C to 85°C, VIN = 2 V, FB = VOUT and ENABLE = VIN (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| V(UVLO) | Undervoltage lockout threshold | TC = 25°C | 1.6 | 1.8 | V | ||
| IOmax | Maximum continuous output current | 100 | mA | ||||
| VO | Output voltage | 1.8 V < VIN < 2 V, VOUT, Start-up = 5 V, 0 < IOUT < IOmax/2, TC = 0°C to 70°C |
4.8 | 5.2 | V | ||
| 2 V < VIN < 3.6 V, 0 < IOUT < IOmax | 4.8 | 5.2 | |||||
| Ilkg(OUT) | Output leakage current | VIN= 2.4 V, V(ENABLE) = GND | 1 | µA | |||
| IQ | Quiescent current (no-load input current) | VIN= 2.4 V | 65 | 90 | µA | ||
| I(SD) | Shutdown current | VIN = 2.4 V, V(ENABLE) = GND | 0.05 | 1 | µA | ||
| f(OSC) | Oscillator frequency | 210 | 320 | 450 | kHz | ||
| VIL | ENABLE input voltage low | VIN = 1.8 V | 0.3 × VI | V | |||
| VIH | ENABLE input voltage high | VIN = 3.6 V | 0.7 × VI | V | |||
| Ilkg(ENABLE) | ENABLE input leakage current | V(ENABLE) = GND or VIN | 0.01 | 0.1 | µA | ||
| Output load regulation | VIN = 2.4 V, 1 mA < IOUT < IOUTmax, TC = 25°C |
0.003 | %/mA | ||||
| Output line regulation | 2 V < VIN < 3.6 V, VOUT = 5 V: IOUT = 75 mA, TC = 25°C |
0.08 | %/V | ||||
| I(SC) | Short-circuit current limit | VIN< 2.4 V, VOUT = 0 V, TC = 25°C | 100 | mA | |||
| V(TRIP,LBI) | LBI trip voltage | TPS60140 | VIN = 1.8 V to 2.2 V, Hysteresis 0.8% for rising LBI voltage, TC = 0°C to 70°C |
1.15 | 1.21 | 1.27 | V |
| IIN(LBI) | LBI input current | TPS60140 | LBI = 1.3 V | 20 | 100 | nA | |
| VOUT(LBO) | LBO output voltage low(2) | TPS60140 | V(LBI) = 0 V, I(LBO,SINK) = 1 mA | 0.4 | v | ||
| Ilkg(LBO) | LBO output leakage current | TPS60140 | V(LBI) = 1.3 V, V(LBO) = 5 V | 0.01 | 0.1 | µA | |
| V(TRIP,PG) | Power-good trip voltage | TPS60141 | TC = 0°C to 70°C | 0.86 × VO | 0.90 × VO | 0.94 × VO | V |
| Vhys(PG) | Power-good trip voltage hysteresis | TPS60141 | VOUT ramping down, TC = 0°C to 70°C | 0.80% | |||
| VOUT(PG) | Power-good output voltage low | TPS60141 | VOUT= 0 V, I(PG,SINK) = 1 mA | 0.4 | V | ||
| Ilkg(PG) | Power-good leakage current | TPS60141 | VOUT = 5 V, V(PG) = 5 V | 0.01 | 0.1 | µA | |
(1) All capacitors are ceramic capacitors of the type X5R or X7R.
(2) During start-up the LBO signal is invalid for the first 500 µs.
8.6 Typical Characteristics
