SLVSA05B August 2009 – August 2015 TPS61086
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
Input voltage IN(2) | –0.3 | 7 | V |
Voltage on pins EN, FB, SS, MODE, COMP | –0.3 | 7 | V |
Voltage on pin SW | –0.3 | 20 | V |
Operating junction temperature | –40 | 150 | °C |
Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
Machine Model | ±200 |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VIN | Input voltage | 2.3 | 6 | V | |
VS | Boost output voltage | VIN + 0.5 | 18.5 | V | |
TA | Operating free-air temperature | –40 | 85 | °C | |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS61086 | UNIT | |
---|---|---|---|
DRC (VSON) | |||
10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 54.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 67.2 | °C/W |
RθJB | Junction-to-board thermal resistance | 29.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 2.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 29.8 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 15.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
VIN | Input voltage range | 2.3 | 6 | V | ||
IQ | Operating quiescent current into IN | Device not switching, VFB = 1.3 V | 75 | 100 | μA | |
ISDVIN | Shutdown current into IN | EN = GND | 1 | μA | ||
VUVLO | Undervoltage lockout threshold | VIN falling | 2.2 | V | ||
VIN rising | 2.3 | V | ||||
TSD | Thermal shutdown | Temperature rising | 150 | °C | ||
TSDHYS | Thermal shutdown hysteresis | 14 | °C | |||
LOGIC SIGNALS EN, FREQ | ||||||
VIH | High level input voltage | VIN = 2.3 V to 6 V | 2 | V | ||
VIL | Low level input voltage | VIN = 2.3 V to 6 V | 0.5 | V | ||
IINLEAK | Input leakage current | EN = GND | 0.1 | μA | ||
BOOST CONVERTER | ||||||
VS | Boost output voltage | VIN + 0.5 | 18.5 | V | ||
VFB | Feedback regulation voltage | 1.23 | 1.238 | 1.246 | V | |
gm | Transconductance error amplifier | 107 | μA/V | |||
IFB | Feedback input bias current | VFB = 1.238 V | 0.1 | μA | ||
rDS(on) | N-channel MOSFET on-resistance | VIN = VGS = 5 V, ISW = current limit | 0.13 | 0.2 | Ω | |
VIN = VGS = 3.3 V, ISW = current limit | 0.16 | 0.23 | ||||
ISWLEAK | SW leakage current | EN = GND, VSW = 6 V | 10 | μA | ||
ILIM | N-channel MOSFET current limit | 2 | 2.6 | 3.2 | A | |
ISS | Soft-start current | VSS = 1.238 V | 7 | 10 | 13 | μA |
fS | Oscillator frequency | 0.9 | 1.2 | 1.5 | MHz | |
Line regulation | VIN = 2.3 V to 6 V, IOUT = 10 mA | 0.0002 | %/V | |||
Load regulation | VIN = 3.3 V, IOUT = 1 mA to 400 mA | 0.11 | %/A |
FIGURE | |||
---|---|---|---|
η | Efficiency vs Load current- PFM | VIN = 3.3 V, VS = 9 V, 12 V, 15 V | Figure 1 |
η | Efficiencyvs Load current - Forced PWM | VIN = 3.3 V, VS = 9 V, 12 V, 15 V | Figure 2 |
Iout(max) | Maximum output current | Figure 3 | |
fS | Switching frequency - Forced PWM | vs Load current, VIN = 3.3 V, VS = 12 V | Figure 4 |
fS | Switching frequency - Forced PWM | vs Supply voltage, VS = 12 V, Iout = 200 mA | Figure 5 |
Supply current | vs Supply voltage,VIN = 3.3 V, VS = 12 V | Figure 6 |