SLVSB50C December 2011 – June 2020 TPS61087-Q1
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
VIN | Input voltage range | 2.5 | 6 | V | ||
IQ | Operating quiescent current into IN pin | Device not switching, VFB = 1.3 V | 75 | 100 | μA | |
ISDVIN | Shutdown current into IN pin | EN = GND | 4 | μA | ||
VUVLO | Undervoltage lockout threshold | VIN falling | 2.4 | V | ||
VIN rising | 2.5 | V | ||||
TSD | Thermal shutdown | Temperature rising | 150 | °C | ||
TSDHYS | Thermal shutdown hysteresis | 14 | °C | |||
LOGIC SIGNALS EN, FREQ | ||||||
VIH | High level input voltage | VIN = 2.5 V to 6 V | 2 | V | ||
VIL | Low level input voltage | VIN = 2.5 V to 6 V | 0.5 | V | ||
IINLEAK | Input leakage current | EN = FREQ = GND | 0.1 | μA | ||
BOOST CONVERTER | ||||||
VS | Boost output voltage | VIN + 0.5 | 18.5 | V | ||
VFB | Feedback regulation voltage | 1.23 | 1.238 | 1.25 | V | |
gm | Transconductance error amplifier | 107 | μA/V | |||
IFB | Feedback input bias current | VFB = 1.238 V | 0.1 | μA | ||
rDS(on) | N-channel MOSFET on-resistance | VIN = VGS = 5 V, ISW = current limit | 0.13 | 0.18 | Ω | |
VIN = VGS = 3 V, ISW = current limit | 0.16 | 0.23 | ||||
ISWLEAK | SW leakage current | EN = GND, VSW = VIN = 6 V | 2 | μA | ||
ILIM | N-Channel MOSFET current limit | 3.2 | 4 | 4.8 | A | |
ISS | Soft-start current | VSS = 1.238 V | 7 | 10 | 13 | μA |
fS | Oscillator frequency | FREQ = VIN | 0.9 | 1.2 | 1.5 | MHz |
FREQ = GND | 480 | 650 | 820 | kHz | ||
Line regulation | VIN = 2.5 V to 6 V, IOUT = 10 mA | 0.0002 | %/V | |||
Load regulation | VIN = 5 V, IOUT = 1 mA to 1 A | 0.11 | %/A |