ZHCSEO8C October   2015  – May 2017 TPS61193-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 器件比较表
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Internal LDO Electrical Characteristics
    7. 7.7  Protection Electrical Characteristics
    8. 7.8  Current Sinks Electrical Characteristics
    9. 7.9  PWM Brightness Control Electrical Characteristics
    10. 7.10 Boost and SEPIC Converter Characteristics
    11. 7.11 Logic Interface Characteristics
    12. 7.12 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated DC-DC Converter
      2. 8.3.2 Internal LDO
      3. 8.3.3 LED Current Sinks
        1. 8.3.3.1 Output Configuration
        2. 8.3.3.2 Current Setting
        3. 8.3.3.3 Brightness Control
      4. 8.3.4 Protection and Fault Detections
        1. 8.3.4.1 Adaptive DC-DC Voltage Control and Functionality of LED Fault Comparators
        2. 8.3.4.2 Overview of the Fault/Protection Schemes
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device States
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application for 3 LED Strings
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Inductor Selection
          2. 9.2.1.2.2 Output Capacitor Selection
          3. 9.2.1.2.3 Input Capacitor Selection
          4. 9.2.1.2.4 LDO Output Capacitor
          5. 9.2.1.2.5 Diode
        3. 9.2.1.3 Application Curves
      2. 9.2.2 SEPIC Mode Application
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Inductor
          2. 9.2.2.2.2 Diode
          3. 9.2.2.2.3 Capacitor C1
        3. 9.2.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Voltage on pins VIN, SW, FB –0.3 50 V
OUT1, OUT2, OUT3 –0.3 45
LDO, SYNC, FSET, ISET, PWM, VDDIO/EN, FAULT –0.3 5.5
Continuous power dissipation(3) Internally Limited
Ambient temperature range TA(4) –40 125 °C
Junction temperature range TJ(4) –40 150 °C
Maximum lead temperature (soldering) See(5)  
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the potential at the GND pins.
(3) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 165°C (typical) and disengages at TJ = 145°C (typical).
(4) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 150°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).
(5) For detailed soldering specifications and information, refer to PowerPAD™ Thermally Enhanced Package .

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 All other pins ±500
Corner pins (1,10,11,20) ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage on pins VIN 4.5 45 V
SW 0 45
OUT1, OUT2, OUT3 0 40
FB, FSET, LDO, ISET, VDDIO/EN, FAULT 0 5.25
SYNC, PWM 0 VDDIO/EN
(1) All voltages are with respect to the potential at the GND pins.

7.4 Thermal Information

THERMAL METRIC(1) TPS61193-Q1 UNIT
PWP (TSSOP)
20 PINS
RθJA Junction-to-ambient thermal resistance(2) 44.2 °C/W
RθJCtop Junction-to-case (top) thermal resistance 26.5 °C/W
RθJB Junction-to-board thermal resistance 22.4 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 22.2 °C/W
RθJCbot Junction-to-case (bottom) thermal resistance 2.5 °C/W
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
(2) Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power dissipation exists, special care must be paid to thermal dissipation issues in board design.

7.5 Electrical Characteristics(1)(2)

TJ = −40°C to +125°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IQ Standby supply current Device disabled, VVDDIO/EN = 0 V, VIN = 12 V 4.5 20 μA
Active supply current VIN = 12 V, VOUT = 26 V, output current 80 mA/channel, converter ƒSW = 300 kHz 5 12 mA
VPOR_R Power-on reset rising threshold LDO pin voltage 2.7 V
VPOR_F Power-on reset falling threshold LDO pin voltage 1.5 V
TTSD Thermal shutdown threshold 150 165 175 °C
TTSD_HYST Thermal shutdown hysteresis 20 °C
(1) All voltages are with respect to the potential at the GND pins.
(2) Minimum and maximum limits are specified by design, test, or statistical analysis.

7.6 Internal LDO Electrical Characteristics

TJ = −40°C to +125°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VLDO Output voltage VIN = 12 V 4.15 4.3 4.55 V
VDR Dropout voltage 120 300 430 mV
ISHORT Short circuit current 50 mA

7.7 Protection Electrical Characteristics

TJ = −40°C to +125°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOVP VIN OVP threshold voltage 41 42 44 V
VUVLO VIN UVLO 4 V
VUVLO_HYST VIN UVLO hysteresis 100 mV
LED short detection threshold 5.6 6 7 V

7.8 Current Sinks Electrical Characteristics

TJ = −40°C to +125°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ILEAKAGE Leakage current Outputs OUT1 to OUT3 , VOUTx = 45 V 0.1 5 µA
IMAX Maximum current OUT1, OUT2, OUT3 100 mA
IOUT Output current accuracy IOUT = 100 mA −5% 5%
IMATCH Output current matching(1) IOUT = 100 mA, PWM duty =100% 1% 5%
VSAT Saturation voltage(2) IOUT = 100 mA 0.4 0.7 V
(1) Output Current Accuracy is the difference between the actual value of the output current and programmed value of this current. Matching is the maximum difference from the average. For the constant current sinks on the part (OUTx), the following are determined: the maximum output current (MAX), the minimum output current (MIN), and the average output current of all outputs (AVG). Matching number is calculated: (MAX-MIN)/AVG. The typical specification provided is the most likely norm of the matching figure for all parts. LED current sinks were characterized with 1-V headroom voltage. Note that some manufacturers have different definitions in use.
(2) Saturation voltage is defined as the voltage when the LED current has dropped 10% from the value measured at 1 V.

7.9 PWM Brightness Control Electrical Characteristics

TJ = −40°C to +125°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ƒPWM PWM input frequency 100 20 000 Hz
tON/OFF Minimum on/off time(1) 0.5 µs
(1) This specification is not ensured by ATE.

7.10 Boost and SEPIC Converter Characteristics

TJ = −40°C to +125°C (unless otherwise noted).
Unless otherwise specified: VIN = 12 V, VEN/VDDIO = 3.3 V, L = 22 μH, CIN = 2 × 10-μF ceramic and 33-μF electrolytic,
COUT = 2 × 10-μF ceramic and 33-μF electrolytic, D = NRVB460MFS, ƒSW = 300 kHz.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage 4.5 40 V
VOUT Output voltage 6 45
ƒSW_MIN Minimum switching frequency (central frequency if spread spectrum is enabled) Defined by RFSET resistor 300 kHz
ƒSW_MAX Maximum switching frequency (central frequency if spread spectrum is enabled) 2 200 kHz
VOUT/VIN Conversion ratio 10
TOFF Minimum switch OFF time(1) ƒSW ≥ 1.15 MHz 55 ns
ISW_MAX SW current limit 1.8 2 2.2 A
RDSON FET RDSON Pin-to-pin 240 400 mΩ
fSYNC External SYNC frequency 300 2 200 kHz
tSYNC_ON_MIN External SYNC minimum on time(1) 150 ns
tSYNC_OFF_MIN External SYNC minimum off time(1) 150 ns
(1) This specification is not ensured by ATE.

7.11 Logic Interface Characteristics

TJ = −40°C to +125°C (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LOGIC INPUT VDDIO/EN
VIL Input low level 0.4 V
VIH Input high level 1.65
II Input current −1 5 30 µA
LOGIC INPUT SYNC/FSET, PWM
VIL Input low level 0.2 × VDDIO/EN V
VIH Input high level 0.8 × VDDIO/EN
II Input current −1 1 μA
LOGIC OUTPUT FAULT
VOL Output low level Pullup current 3 mA 0.3 0.5 V
ILEAKAGE Output leakage current V = 5.5 V 1 μA

7.12 Typical Characteristics

Unless otherwise specified: D = NRVB460MFS, T = 25°C
TPS61193-Q1 C001_SNVSA50.png
ƒSW = 300 kHz L = 33 μH DC Load (PWM = 100%)
CIN and COUT = 33 µF + 2 × 10 µF (ceramic)
Figure 1. Maximum Boost Current
TPS61193-Q1 C003_SNVSA50.png
ƒSW = 1.5 MHz L = 8.2 μH DC Load (PWM = 100%)
CIN and COUT = 2 × 10 µF (ceramic)
Figure 3. Maximum Boost Current
TPS61193-Q1 Iled_vs_Riset_100mA.png
Figure 5. LED Current vs RISET
TPS61193-Q1 C013_SNVSA50.png
Figure 7. LED Current Sink Matching
TPS61193-Q1 C002_SNVSA50.png
ƒSW = 800 kHz L = 15 μH DC Load (PWM = 100%)
CIN and COUT = 2 ×10 µF (ceramic)
Figure 2. Maximum Boost Current
TPS61193-Q1 C004_SNVSA50.png
ƒSW = 2.2 MHz L = 4.7 μH DC Load (PWM = 100%)
CIN and COUT = 2 × 10 µF (ceramic)
Figure 4. Maximum Boost Current
TPS61193-Q1 C009_SNVSA50.png
Figure 6. Boost Switching Frequency ƒSW vs RFSET
TPS61193-Q1 C014_SNVSA50.png
RISET = 24 kΩ
Figure 8. LED Current Sink Saturation Voltage
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